Untitled
Abstract: No abstract text available
Text: Data Sheet Midium Power Transistors ±50V / ±3A MP6Z13 Structure NPN/PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (Dual) Features 1) Low saturation voltage, typically V CE (sat) = 0.35V (Max.) (I C / I B= 1A / 50mA) V CE (sat) = -0.40V (Max.) (I C / I B= -1A / -50mA)
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MP6Z13
-50mA)
R1120A
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Untitled
Abstract: No abstract text available
Text: Data Sheet Midium Power Transistors ±30V / ±1A MP6Z11 Structure NPN/PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (Dual) Features Low saturation voltage, typically VCE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA) VCE (sat) = -0.35V (Max.) (I C / I B= -500mA / -25mA)
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MP6Z11
500mA
-500mA
-25mA)
R1120A
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Untitled
Abstract: No abstract text available
Text: Medium Power Transistor -32V, -1A MP6Z1 Dimensions (Unit : mm) Applications Low frequency amplifier MPT6 Features 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package. (6) (5) (4)
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-500mA
-50mA)
2SD1664-die
2SB1132-die
R1010A
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Untitled
Abstract: No abstract text available
Text: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC /IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.
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Original
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-500mA
-50mA)
2SD1664-die
2SB1132-die
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet Midium Power Transistors ±50V / ±3A MP6Z13 Structure NPN/PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (Dual) Features 1) Low saturation voltage, typically V CE (sat) = 0.35V (Max.) (I C / I B= 1A / 50mA) V CE (sat) = -0.40V (Max.) (I C / I B= -1A / -50mA)
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MP6Z13
-50mA)
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.
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-500mA
-50mA)
2SD1664-die
2SB1132-die
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MP6Z1
Abstract: No abstract text available
Text: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.
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-500mA
-50mA)
2SD1664-die
2SB1132-die
MP6Z1
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Untitled
Abstract: No abstract text available
Text: Midium Power Transistors ±50V / ±1A MP6Z12 Structure NPN/PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (Dual) Features 1) Low saturation voltage, typically V CE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA) V CE (sat) = -0.40V (Max.) (I C / I B= -500mA / -25mA)
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MP6Z12
500mA
-500mA
-25mA)
R1010A
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2SC6144
Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.
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R0039A
52P6215E
2SC6144
IMD16A
potential divider
2SA1576UB
DTD513Z
MP6T3
2SCR514
2SA1514K equivalent
2SCR543
2SC6114
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2SA1576UB
Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
Text: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.
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R0039A
51P6029E
2SA1576UB
2SC1740s equivalent
transistor digital 47k 22k PNP NPN
2sd198
2SC6114
2sc401
2SB1240
2SB1694
2SC5865
2sD2703
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