MPSW56 Search Results

Contextual Info: MOTOROLA Order this document by MPSW55/D SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Unit Collector – Emitter Voltage

MPSW55

Abstract: MPSW56
Contextual Info: ON Semiconductort MPSW55 MPSW56* One Watt Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSW55 MPSW56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 ‘Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating C o llecto r- Emitter Voltage C o lle c to r-B a s e Voltage E m itte r-B a s e Voltage

PR79

Abstract: mpsw56 transistor CBVK741B019 F63TNR MPSW56 PN2222N s773
Contextual Info: MPSW56 MPSW56 C TO-226 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPSW55

Abstract: MPSW55G MPSW56 MPSW56RLRP MPSW56RLRPG
Contextual Info: MPSW55, MPSW56 One Watt Amplifier Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSW55 MPSW56 VCEO −60 −80 Vdc Collector −Base Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 ‘ Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-B ase Voltage E m itter-B ase Voltage Symbol

MPSW56

Abstract: MPSW55
Contextual Info: MOTOROLA Order this document by MPSW55/D SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Unit Collector – Emitter Voltage

Contextual Info: MPSW55, MPSW56 One Watt Amplifier Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSW55 MPSW56 VCEO −60 −80 Vdc Collector −Base Voltage

Contextual Info: ON Semiconductort MPSW55 MPSW56 One Watt Amplifier Transistors PNP Silicon MPSW56 is a Preferred Device MAXIMUM RATINGS Rating Symbol MPSW55 MPSW56 Unit Collector −Emitter Voltage VCEO −60 −80 Vdc Collector −Base Voltage VCBO −60 −80 Vdc Emitter −Base Voltage

BC237

Abstract: 2n2904 2n2905
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Unit Collector – Emitter Voltage VCEO –60 –80 Vdc

Contextual Info: ON Semiconductort MPSW55 MPSW56 One Watt Amplifier Transistors PNP Silicon MPSW56 is a Preferred Device MAXIMUM RATINGS Rating Symbol MPSW55 MPSW56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage

Contextual Info: MPSA56/MPSW56/MMBTA56 £ 5 | National m im Semiconductor MPSA56 / if M MMBTA56 MPSW56 C iJ ir È 10-92 N ^ c 7^7 ! TO-236 (SOT- 23 TO- 226AE Tl/G/10100-5 B. c TL/G/10100-1 8c TL/G/10100-4 PNP General Purpose Amplifier Electrical Characteristics Symbol = 25°c unless otherwise noted

MPSW55

Abstract: MPSW56
Contextual Info: ON Semiconductort MPSW55 MPSW56 One Watt Amplifier Transistors PNP Silicon MPSW56 is a Preferred Device MAXIMUM RATINGS Rating Symbol MPSW55 MPSW56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage

Contextual Info: M AXIM UM RATINGS Symbol MPSW55 MPSW56 C o llector-E m itter Voltage v CEO -6 0 -8 0 Vdc Collector-Base Voltage v CBO -6 0 -8 0 Vdc Em itter-Base Voltage v EBO -4 .0 Vdc >C - 500 m Adc = 25X Pd 1.0 8.0 W att m W 'rC Total Device Dissipation <V T c = 25’ C

mpsw56 transistor

Abstract: ic-250mA MPSW56
Contextual Info: MPSW56 MPSW56 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. BASE Collector current ICM: -500 mA Collector-base voltage -80 V V(BR)CBO: Operating and storage junction temperature range 3. COLLECTOR 1 2 3 TJ, Tstg: -55℃ to +150℃

MMBTA56

Abstract: MPSW56
Contextual Info: NATL SEMICOND DISCRETE H E D I bSD1130 DD37S71 3 I •o A > cn o> National Semiconductor T ' 2e?-^1 ■o to € CJ1 o> MPSA56 MPSW56 MMBTA56 § a> T U G /10100-S PNP General Purpose Amplifier Electrical Characteristics T a = 25°C unless otherwise noted M in

MPSW

Contextual Info: MPSW55 MPSW56* M A XIM U M RATINGS MPSW56 Unit C o lle c to r -E m itte r V o lta g e v CEO 60 -8 0 V dc C o lle c to r-B a s e V o lta g e v CB O - 60 80 V dc E m itte r-B a s e V o lta g e v EBO Rating Symbol C o lle c to r C u rre n t — C o n tin u o u s

MPSW56

Contextual Info: MPSW56 MPSW56 C TO-226 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11