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NXP Semiconductors MR2A16ATS35C IC RAM 4MBIT PARALLEL 44TSOP II
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DigiKey	MR2A16ATS35C	Tray			135	1 - 10 - 100 - 1000 $23.73385 10000 $23.73385	Buy Now
NXP Semiconductors MR2A16ATS35CR IC RAM 4MBIT PARALLEL 44TSOP II
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DigiKey	MR2A16ATS35CR	Reel			1,000	1 - 10 - 100 - 1000 $21.51884 10000 $21.51884	Buy Now
FRE MR2A16ATS35C Electronic Component
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ComSIT USA	MR2A16ATS35C		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MR2A16ATS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MR2A16ATS35C		Freescale Semiconductor	Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 44TSOP		Original	PDF
MR2A16ATS35CR		Freescale Semiconductor	Memory, Integrated Circuits (ICs), IC MRAM 4MBIT 35NS 44TSOP		Original	PDF

MR2A16ATS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MR2A16A Abstract: MR2A16ATS35C Text: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 6, 11/2007 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The	Original	MR2A16A 16-Bit MR2A16A 304-bit MR2A16ATS35C	PDF
ISP1362 Abstract: SW710 philips MR2A16ATS mcf5233cvm Coldfire MCF5235 HALO N5 SMD fuse BA siemens c45 smd transistor h5c MCF5232CAB80 Text: Freescale Semiconductor User’s Manual M5235EVBUM Rev. 2, 08/2007 M5235EVB User’s Manual by: Microcontroller Division 1 Preface EMC information: • This product, as shipped from the factory with associated power supplies and cables, has been tested and meets with requirements of EN5022	Original	M5235EVBUM M5235EVB EN5022 ISP1362 SW710 philips MR2A16ATS mcf5233cvm Coldfire MCF5235 HALO N5 SMD fuse BA siemens c45 smd transistor h5c MCF5232CAB80	PDF
Untitled Abstract: No abstract text available Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in	Original	MR2A16A AEC-Q100 MR2A16A 304-bit EST00193 Rev10	PDF
MR2A16A Abstract: MR2A16ACYS35R mr2a16acma35 MR2A16AMA35 MR2A16AYS35 MR2A16ACYS35 MR2A16AVYS35 400-mil Text: MR2A16A 256Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System	Original	MR2A16A 256Kx16 20-years 44-TSOP 48-BGA MR2A16A MR2A16ACYS35R mr2a16acma35 MR2A16AMA35 MR2A16AYS35 MR2A16ACYS35 MR2A16AVYS35 400-mil	PDF
MR2A16A Abstract: No abstract text available Text: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 3, 6/2006 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The	Original	MR2A16A 16-Bit 304-bit MR2A16A	PDF
MR2A16A Abstract: No abstract text available Text: Freescale Semiconductor Advance Information MR2A16A/D Rev. 0.1, 7/2004 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output	Original	MR2A16A/D 16-Bit MR2A16A 304-bit	PDF
MR2A16A Abstract: No abstract text available Text: Freescale Semiconductor Advance Information MR2A16A/D Rev. 0.1, 7/2004 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresitive random access memory MRAM device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output	Original	MR2A16A/D 16-Bit MR2A16A 304-bit MR2A16A/D	PDF
Untitled Abstract: No abstract text available Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in	Original	MR2A16A AEC-Q100 MR2A16A 304-bit EST00193 Rev10	PDF
MR2A16ATS Abstract: MR2A16A Text: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 6, 11/2007 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The	Original	MR2A16A 16-Bit MR2A16A 304-bit MR2A16ATS	PDF
MR2A16AMYS35 Abstract: MR2A16A MR2A16AMA35 Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in	Original	MR2A16A AEC-Q100 MR2A16A 304-bit MR2A16AMYS35 MR2A16AMA35	PDF
MR2A16A Abstract: No abstract text available Text: Advance Information MR2A16A/D 2/2004 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresitive random access memory MRAM device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output enable (G) pins,	Original	MR2A16A/D 16-Bit MR2A16A 304-bit MR2A16A/D	PDF
MR2A16AC Abstract: tsop 48 PIN type2 MR2A16AMY MRAM MR2A16ACYS35R 44TSOP mr2a16amys35 MR2A16ATS35 MR2A16A 012MAX Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in	Original	MR2A16A 20-years AEC-Q100 MR2A16A 304-bit MR2A16horized MR2A16AC tsop 48 PIN type2 MR2A16AMY MRAM MR2A16ACYS35R 44TSOP mr2a16amys35 MR2A16ATS35 012MAX	PDF
MR2A16A Abstract: MR2A16AMA35 6726 power transistor MR2A16ACMA35 MR2A16ATS35C Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in	Original	MR2A16A 20-years MR2A16A 304-bit EST00193 MR2A16A, MR2A16AMA35 6726 power transistor MR2A16ACMA35 MR2A16ATS35C	PDF
MR2A16A Abstract: No abstract text available Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: MR2A16A Rev. 1, 5/2006 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The	Original	MR2A16A 16-Bit 304-bit MR2A16A	PDF

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Advance Information MR2A16A/D Rev. 0.1, 7/2004 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output	Original	MR2A16A/D 16-Bit MR2A16A 304-bit MR2A16A/D	PDF
MR2A16A Abstract: Everspin Technologies Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in	Original	MR2A16A 20-years MR2A16A 304-bit Everspin Technologies	PDF
Untitled Abstract: No abstract text available Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write cycle • SRAM compatible timing, uses existing SRAM controllers without redesign • Unlimited Read & Write endurance • Data non-volatile for >20 years at temperature • One memory replaces Flash, SRAM, EEPROM and	Original	MR2A16A AEC-Q100 44-pin 48-ball MR2A16A	PDF