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Motorola Semiconductor Products MRA0610-3 TRANSISTOR,BJT,NPN,50V V(BR)CEO,500MA I(C),FO-57C
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MRA0610 Datasheets (15)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MRA0610		Motorola	THE RF LINE UHF POWER TRANSISTORS		Scan	PDF
MRA0610-18		Great American Electronics	Silicon NPN high power UHF transistor		Scan	PDF
MRA0610-18A		Advanced Semiconductor	Transistor		Original	PDF
MRA0610-18A		Unknown	MICROAMP-R P-BAND CLASS C POWER TRANSISTORS		Scan	PDF
MRA0610-23		Advanced Semiconductor	Transistor		Original	PDF
MRA0610-3		Great American Electronics	Silicon NPN high power UHF transistor		Scan	PDF
MRA0610-3		TRW	MICROAMP-R P-BAND CLASS C POWER TRANSISTORS		Scan	PDF
MRA0610-3H		Great American Electronics	Silicon NPN high power UHF transistor		Scan	PDF
MRA0610-40A		Advanced Semiconductor	Transistor		Original	PDF
MRA0610-40A		Unknown	MICROAMP-R P-BAND CLASS C POWER TRANSISTORS		Scan	PDF
MRA0610-9		Unknown	MICROAMP-R P-BAND CLASS C POWER TRANSISTORS		Scan	PDF
MRA0610H		Motorola	UHF POWER TRANSISTORS		Scan	PDF
MRA0610H-18H		Motorola	UHF POWER TRANSISTORS		Scan	PDF
MRA0610H-3H		Motorola	UHF POWER TRANSISTORS		Scan	PDF

MRA0610H-9H		Motorola	UHF POWER TRANSISTORS		Scan	PDF

MRA0610 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MRA0610-18A Abstract: MRA transistor Text: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-18A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.	Original	MRA0610-18A MRA0610-18A MRA transistor	PDF
MRA0610-23 Abstract: "RF Power Transistor" Text: MRA0610-23 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .320 2L FLG DESCRIPTION: The MRA0610-23 is designed for Class C, Common Base Wideband Large Signal Amplifier Applications from 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast	Original	MRA0610-23 MRA0610-23 "RF Power Transistor"	PDF
Untitled Abstract: No abstract text available Text: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 0610-18A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications from 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.	Original	MRA0610-18A 610-18A	PDF
MRA0610-40A Abstract: IC 555 datasheet of ic 555 RF NPN POWER TRANSISTOR 2.5 GHZ MRA0610-18A MRA transistor Text: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-40A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.	Original	MRA0610-18A MRA0610-40A IC 555 datasheet of ic 555 RF NPN POWER TRANSISTOR 2.5 GHZ MRA0610-18A MRA transistor	PDF
MLED96 Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B	Original	ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA	PDF
IC 2267 equivalent Abstract: IC 8 PIN 2267 MRA0610-18A MRA0610-40A Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRA0610 Series The RF Line UHF Pow er Transistors . . . designed prim arily for wideband, large-signal output and driver am plifier stages in the 600 to 1000 MHz frequency range. 7 to 7.8 dB 600-1000 MHz 3 TO 40 W ATTS	OCR Scan	MRA0610 IC 2267 equivalent IC 8 PIN 2267 MRA0610-18A MRA0610-40A	PDF
MRA0610-18A Abstract: MRA0610-40A MRA0610-9 MRA0610 MRA0610-3 Text: \ M O TO R O LA SEMICONDUCTOR TECHNICAL DATA MRA0610 Series The RF Line UHF Pow er Transistors x ' . . . designed prim arily for wideband, large-signal output and driver amplifier stages in the 600 to 1000 MHz frequency range. e Designed for Class C, Com m on Base Power Am plifiers	OCR Scan	P33-01 Po-40W 220pf MRA0610 MRA0610-18A MRA0610-40A MRA0610-9 MRA0610-3	PDF
28V relay Abstract: MRA0610-18 relay m Text: GAE GREAT AMERICAN ELECTROINCS MRA0610-18 Silicon NPN high power UHF transistor MRA0610-18 is designed for Class C common base wide band amplifier applications in transmitters or radio relay systems. Output Power: Frequency Range: Voltage: Package Type: Input Matched	OCR Scan	MRA0610-18 MRA0610-18 FO-57C 28V relay relay m	PDF
MRA0610 Abstract: MRA0610-40A MRA0610-18A MRA0610-3 MRA0610-9 trw rf semiconductors Text: MRA0610-3, MRA0610-9, MRA0610-18A, MRA0610-40A MIC roAMP P-Band Class C Power Transistors • • • • • • • 3 to 40 Watts Broadband 600-1000 MHz Internally Compensated* Gold Metalized Diffused Ballast Resistors MTTF Data Common Base M R A .25 Electrical C h a ra cte ristics fT,	OCR Scan	mra0610-9, mra0610-18a, MRA0610-3 MRA0610-9 10-18A MRA0610-40A mra0610-3, mra061018a, mra061040a MRA0610 MRA0610-40A MRA0610-18A trw rf semiconductors	PDF
MRA0610-3 Abstract: No abstract text available Text: GAE GREAT AMERICAN ELECTROINCS MRA0610-3 Silicon NPN high power UHF transistor MRA0610-3 is designed for Class C common base wide band amplifier applications in transmitters or radio relay systems. Output Power: Frequency Range: Voltage: Package Type: Input Matched	OCR Scan	MRA0610-3 MRA0610-3 FO-57C 00Q0052	PDF
MRA0610H Abstract: No abstract text available Text: -T-3 3 -0 I MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRA0610H Series The RF Line UHF Pow er Transistors . . . designed primarily for wideband, large-signal output and driver amplifier stages In the 600 to 1000 MHz frequency range. • Designed for Class C, Common Base Power Amplifiers	OCR Scan	-T-33-0 MRA0610H HLP-111 MRA0610- tc210 MRA0610H	PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp	PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF
2N4427 equivalent bfr91 Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability	OCR Scan	PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239	PDF

A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor	PDF
trw RF POWER TRANSISTOR Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .	OCR Scan		PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
MRA0610H Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R A 0610H Series The RF Line UHF Power Transistors . . . designed p rim a rily fo r w id e b an d , large-signal o u tp u t and d riv e r a m p lifie r stages in the 600 to 1000 MHz fre q u en cy range. 7.8 dB 600 -1 0 00 M Hz	OCR Scan	0610H MRA0610- MRA0610H	PDF