MRA061040A Search Results

MRA061040A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MRA0610-40A		Advanced Semiconductor	Transistor		Original	PDF
MRA0610-40A		Unknown	MICROAMP-R P-BAND CLASS C POWER TRANSISTORS		Scan	PDF

MRA061040A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MRA0610-40A Abstract: IC 555 datasheet of ic 555 RF NPN POWER TRANSISTOR 2.5 GHZ MRA0610-18A MRA transistor Text: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-40A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.	Original	MRA0610-18A MRA0610-40A IC 555 datasheet of ic 555 RF NPN POWER TRANSISTOR 2.5 GHZ MRA0610-18A MRA transistor	PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF
IC 2267 equivalent Abstract: IC 8 PIN 2267 MRA0610-18A MRA0610-40A Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRA0610 Series The RF Line UHF Pow er Transistors . . . designed prim arily for wideband, large-signal output and driver am plifier stages in the 600 to 1000 MHz frequency range. 7 to 7.8 dB 600-1000 MHz 3 TO 40 W ATTS	OCR Scan	MRA0610 IC 2267 equivalent IC 8 PIN 2267 MRA0610-18A MRA0610-40A	PDF
2N4427 equivalent bfr91 Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability	OCR Scan	PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239	PDF
MRA0610-18A Abstract: MRA0610-40A MRA0610-9 MRA0610 MRA0610-3 Text: \ M O TO R O LA SEMICONDUCTOR TECHNICAL DATA MRA0610 Series The RF Line UHF Pow er Transistors x ' . . . designed prim arily for wideband, large-signal output and driver amplifier stages in the 600 to 1000 MHz frequency range. e Designed for Class C, Com m on Base Power Am plifiers	OCR Scan	P33-01 Po-40W 220pf MRA0610 MRA0610-18A MRA0610-40A MRA0610-9 MRA0610-3	PDF
MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503	PDF
A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor	PDF
MRA0610 Abstract: MRA0610-40A MRA0610-18A MRA0610-3 MRA0610-9 trw rf semiconductors Text: MRA0610-3, MRA0610-9, MRA0610-18A, MRA0610-40A MIC roAMP P-Band Class C Power Transistors • • • • • • • 3 to 40 Watts Broadband 600-1000 MHz Internally Compensated* Gold Metalized Diffused Ballast Resistors MTTF Data Common Base M R A .25 Electrical C h a ra cte ristics fT,	OCR Scan	mra0610-9, mra0610-18a, MRA0610-3 MRA0610-9 10-18A MRA0610-40A mra0610-3, mra061018a, mra061040a MRA0610 MRA0610-40A MRA0610-18A trw rf semiconductors	PDF