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    MRF21030 Price and Stock

    NXP Semiconductors MRF21030LR3

    RF MOSFET LDMOS 28V NI400
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    Rochester Electronics LLC MRF21030LR3

    RF MOSFET LDMOS 28V NI400
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    NXP Semiconductors MRF21030LR5

    LDMOS POWER TR - Tape and Reel (Alt: MRF21030LR5)
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    Freescale Semiconductor MRF21030L

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    Motorola Semiconductor Products MRF21030S

    MOSFET Transistor, N-Channel, SOT-391B
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    Quest Components MRF21030S 11
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    MRF21030 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MRF21030 Freescale Semiconductor MRF21030LR3, MRF21030LSR3 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETs Original PDF
    MRF21030 Motorola MRF21030, MRF21030S 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETs Original PDF
    MRF21030D Motorola RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS Original PDF
    MRF21030LR3 Freescale Semiconductor 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF21030LR3 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-400 Original PDF
    MRF21030LR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-400 Original PDF
    MRF21030LSR3 Freescale Semiconductor 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF21030R3 Freescale Semiconductor 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF21030R3 Motorola RF Power Field Effect Transistor Original PDF
    MRF21030R3 Motorola RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS Original PDF
    MRF21030S Freescale Semiconductor FET, Enhancement, N Channel, 2 VThreshold Original PDF
    MRF21030SR3 Freescale Semiconductor 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF21030SR3 Motorola RF Power Field Effect Transistor Original PDF
    MRF21030SR3 Motorola RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS Original PDF

    MRF21030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF21030

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21030-1 Rev. 13, 10/2008 RF Power Field Effect Transistor Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21030--1 MRF21030LSR3 MRF21030--1 MRF21030

    motorola MRF

    Abstract: Motorola transistors MRF 470 MRF21030
    Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF21030/D MRF21030 MRF21030R3 MRF21030S MRF21030SR3 MRF21030/D motorola MRF Motorola transistors MRF 470

    250 watts amplifier schematic diagram

    Abstract: NI-400 Motorola transistors MRF MRF21030S MRF21030
    Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF21030/D MRF21030 MRF21030R3 MRF21030S MRF21030SR3 250 watts amplifier schematic diagram NI-400 Motorola transistors MRF

    MRF21030

    Abstract: 150 watts power amplifier layout T 2140 zo 405 400S MRF21030LR3 MRF21030LSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF21030 Rev. 12, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21030LR3 MRF21030LSR3 Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF21030 MRF21030LR3 MRF21030LSR3 MRF21030LR3 MRF21030 150 watts power amplifier layout T 2140 zo 405 400S MRF21030LSR3

    MRF21030LR3

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 11, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21030LR3 MRF21030LSR3 Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21030LR3 MRF21030LSR3

    TLX8-0300

    Abstract: 250 watts amplifier schematic diagram MRF21030 MRF21030S gps transmitter circuit diagram 100 watts amplifier circuit diagram
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21030 MRF21030S TLX8-0300 250 watts amplifier schematic diagram gps transmitter circuit diagram 100 watts amplifier circuit diagram

    MRF21030

    Abstract: 400S MRF21030LR3 MRF21030LSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030LR3 MRF21030LSR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF21030/D MRF21030LR3 MRF21030LSR3 MRF21030LR3 MRF21030 400S MRF21030LSR3

    MRF21030

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21030R3 MRF21030SR3 MRF21030

    Motorola transistors MRF 470

    Abstract: motorola mrf MRF21030
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21030 MRF21030R3 MRF21030S MRF21030SR3 Motorola transistors MRF 470 motorola mrf

    MRF21030

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030R3 MRF21030LR3 MRF21030SR3 MRF21030LSR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF21030/D MRF21030R3 MRF21030LR3 MRF21030SR3 MRF21030LSR3 MRF21030

    MRF21030

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21030 Rev. 12, 5/2006 RF Power Field Effect Transistors MRF21030LR3 MRF21030LSR3 Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21030 MRF21030LR3 MRF21030LSR3 MRF21030LR3 MRF21030

    MRF21030

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21030 Rev. 11, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21030LR3 MRF21030LSR3 Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21030 MRF21030LR3 MRF21030LSR3

    MRF21030D

    Abstract: TLX8-0300 MRF21030
    Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF21030/D MRF21030 MRF21030S MRF21030D TLX8-0300

    Motorola transistors MRF 470

    Abstract: motorola mrf TLX8-0300 MRF21030 400S MRF21030R3 MRF21030SR3 Motorola transistors MRF
    Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF21030/D MRF21030R3 MRF21030SR3 MRF21030R3 Motorola transistors MRF 470 motorola mrf TLX8-0300 MRF21030 400S MRF21030SR3 Motorola transistors MRF

    Motorola transistors MRF 470

    Abstract: MRF MOSFET MRF21030 MRF FM amplifier 400S MRF21030R3 MRF21030SR3
    Text: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF21030/D MRF21030R3 MRF21030SR3 MRF21030R3 Motorola transistors MRF 470 MRF MOSFET MRF21030 MRF FM amplifier 400S MRF21030SR3

    MRF21030

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21030 Rev. 11, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21030LR3 MRF21030LSR3 Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21030 MRF21030LR3 MRF21030LSR3

    MRF21030L

    Abstract: MRF21030
    Text: Freescale Semiconductor Technical Data Document Number: MRF21030 Rev. 12, 5/2006 RF Power Field Effect Transistors MRF21030LR3 MRF21030LSR3 Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21030 MRF21030LR3 MRF21030LSR3 MRF21030L

    UGF21030F

    Abstract: UGF21030 UGF21030P 300GP
    Text: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21030 2135MHz, 2145MHz f1-10MHz 10MHz) 28VSpace 28VDC 350mA 2140Mhz 84MHz UGF21030F UGF21030 UGF21030P 300GP

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


    Original     		PDF SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode