MRF495 Search Results

Contextual Info: MRF4957HX Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)20

MRF495

Abstract: MRF4957HX s54 mo
Contextual Info: 4bE D • b3ti72S4 O Q T S T n 7 ■ MO Tb * 1 - 2 3 - 2 3 M O T O R O L A SC X S T R S / r f , MOTOROLA SEMICONDUCTOR! TECHNICAL DATA MRF4957HX,HXV DM0 «///// PNP Silicon RF High-Frequency Transistor Discrete Military Operation . . .designed for high-gain, low-noise amplifier, oscillator and mixer applications.

Contextual Info: MRF4957HXV Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)20

MRF660

Abstract: MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522
Contextual Info: MOTOROLA SC XSTRS/R F 2 bE D • b3b?2S4 GGT0Ô7G 4 ■ T - MIL-Processed Semiconductors (Continued) SELECTOR GUIDE POWER TRANSISTORS TMOS FETs These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers, and PWM motor

MRF495

Abstract: case 60-01
Contextual Info: 10T0R0LA SC -CDIODES/OPT0> BTE D M W3b?aSS 0031051 S B NOT? T -03-0 I MIL-Processed Packaged Products continued Bipolar, RF (continued) Maximum Ratings Device Number VCEO Vdc •c mA Electrical Characteristics Po w >CBO (Ado Max hFE Min/Max fr _ GHz @ rc