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Rochester Electronics LLC MRFG35003N6AT1 RF MOSFET PHEMT FET 6V PLD-1.5
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DigiKey	MRFG35003N6AT1	Bulk	5,000		20	1 - 10 - 100 $15.69 1000 $15.69 10000 $15.69	Buy Now
NXP Semiconductors MRFG35003N6AT1 RF MOSFET PHEMT FET 6V PLD-1.5
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DigiKey	MRFG35003N6AT1	Cut Tape	853		1	1 $20.74 10 $19.062 100 $16.0992 1000 $14.32134 10000 $14.32134	Buy Now
	MRFG35003N6AT1	Digi-Reel			1	1 $20.74 10 $19.062 100 $16.0992 1000 $14.32134 10000 $14.32134	Buy Now
	MRFG35003N6AT1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	MRFG35003N6AT1	Reel		4 Weeks	23	1 - 10 - 100 $14.7832 1000 $14.2397 10000 $13.4788	Buy Now
Newark	MRFG35003N6AT1	Reel			1,000	1 - 10 - 100 - 1000 $12.23 10000 $11.64	Buy Now
Rochester Electronics	MRFG35003N6AT1		1,700		1	1 $15.85 10 $15.85 100 $14.9 1000 $13.47 10000 $13.47	Buy Now
EBV Elektronik	MRFG35003N6AT1			28 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

MRFG35003N6A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
MRFG35003N6AT1		Freescale Semiconductor	3.5GHZ 3W 6V GAAS PLD1.5		Original	PDF

MRFG35003N6A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K 1358 fet transistor Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17 Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35003N6A MRFG35003N6AT1 K 1358 fet transistor MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 replaced by MRFG35003N6AT1. MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,	Original	PDF	MRFG35003N6 MRFG35003N6T1 MRFG35003N6AT1. MRFG35003N6T1
MRFG35003N6AT1 Abstract: IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118 Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 0, 7/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35003N6A MRFG35003N6AT1 MRFG35003N6AT1 IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35003N6A MRFG35003N6AT1
MRFG35003N6AT1 Abstract: ATC100A101 A113 A114 A115 AN1955 C101 JESD22 0841 K 1358 fet transistor Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 1, 11/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35003N6A MRFG35003N6AT1 MRFG35003N6AT1 ATC100A101 A113 A114 A115 AN1955 C101 JESD22 0841 K 1358 fet transistor
MRFG35003N6AT1 Abstract: A113 MRFG35003N6T1 Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 replaced by MRFG35003N6AT1. MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,	Original	PDF	MRFG35003N6 MRFG35003N6T1 MRFG35003N6AT1. MRFG35003N6T1 MRFG35003N6AT1 A113
MPC5634M Abstract: MRF6VP11KH mw4ic2020nb S12XEQ512 MPC5516E MXC300-30 MPC5602P MSC7120 mpx6115 S08DZ128 Text: Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently are not available from Freescale for import or sale in the United States prior to September 2010: ,	Original	PDF	DSP56311EVM DSP56311VF150 DSP56311VL150 DSP56321VF200 DSP56321VF220 DSP56321VF240 DSP56321VF275 DSP56321VL200 DSP56321VL220 DSP56321VL240 MPC5634M MRF6VP11KH mw4ic2020nb S12XEQ512 MPC5516E MXC300-30 MPC5602P MSC7120 mpx6115 S08DZ128
MC908GP32 Abstract: 9S12XHZ256 DSP56309VF100A 9S08DZ32 mpx6115 MXC300-30 xc912bc32 DSP56309AG100A MRF6VP2600H 9S08SG16 Text: Freescale Semiconductor Product Selector Guide Cross Reference Quarter 4, 2007 SG1000CRQ42007 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the eight Freescale Semiconductor Product Selector Guides. The Product Cross-Reference group lists new and existing	Original	PDF	SG1000CRQ42007 SG187, SG1002Q42007, SG1004Q42007, MC908GP32 9S12XHZ256 DSP56309VF100A 9S08DZ32 mpx6115 MXC300-30 xc912bc32 DSP56309AG100A MRF6VP2600H 9S08SG16
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original	PDF
power transistors table Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,	Original	PDF
MRF8P9040N Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1 Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial	Original	PDF
MS08QD4 Abstract: MCF52236 MPC56xx instruction set digrf MCF52252 MMM6000 MMM7010 MPC5602B MS08EL32 MPC56xx Text: SG1000mini Freescale Semiconductor Product Selector Guides Quarter 2, 2009 Product Selector Guide Cross-Reference, SG1000CR Automotive, SG187 Analog and Mixed Signal Power Management, SG1002 Digital Signal Processors DSP , SG1004 Network/Embedded Processors, SG1007	Original	PDF	SG1000mini SG1000CR SG187 SG1002 SG1004 SG1007 SG1009 SG1010 SG1013 32-Bit MS08QD4 MCF52236 MPC56xx instruction set digrf MCF52252 MMM6000 MMM7010 MPC5602B MS08EL32 MPC56xx
gsm booster circuit Abstract: mrf373al u880 RF MODULATORS mrf9030n MRF6VP11KH MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060 Text: RF Product Focus Products Quarter 4, 2007 SG1009Q42007 Rev 0 RF Industrial, Scientific and Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers	Original	PDF	SG1009Q42007 MRF6VP11KH MRF6VP21KH MRF6VP41KH/HS gsm booster circuit mrf373al u880 RF MODULATORS mrf9030n MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060
9s12ha48 Abstract: 9S12XHZ512 9s12ha32 9s12hy64 mw4ic2020nb MPC5516E 9S08DZ32 MPC8640D MXC300-30 SG187 Text: Freescale Semiconductor Product Selector Guide Cross-Reference Quarter 4, 2008 SG1000CRQ42008 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the seven Freescale Semiconductor Product Selector Guides. The Product Cross-Reference group lists new and	Original	PDF	SG1000CRQ42008 SG187, SG1002Q42008, SG1004Q42008, 9s12ha48 9S12XHZ512 9s12ha32 9s12hy64 mw4ic2020nb MPC5516E 9S08DZ32 MPC8640D MXC300-30 SG187

MRFG35003N6AT1 Abstract: A113 MRFG35003N6T1 motorola marking pld-1.5 package TRANSISTOR J 5803 Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in	Original	PDF	MRFG35003N6 MRFG35003N6T1 MRFG35003N6AT1 A113 MRFG35003N6T1 motorola marking pld-1.5 package TRANSISTOR J 5803
gsm booster circuit Abstract: MRF5P21180H gsm 900 dual band signal booster gsm signal Booster MRF8S21170H gsm signal booster circuit circuit booster gsm MRF6VP11KH MW6S004N MC44BS373 Text: RF Product Focus Products Quarter 2, 2009 SG1009Q22009 Rev 0 RF Industrial, Scientific and Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power Transistors RF Amplifier ICs RF General Purpose Amplifiers RF Modulators, Booster - Splitter, Stereo Encoders, Silicon Tuners	Original	PDF	SG1009Q22009 MRF6VP11KH MRF6VP21KH MRF6VP41KH/HS gsm booster circuit MRF5P21180H gsm 900 dual band signal booster gsm signal Booster MRF8S21170H gsm signal booster circuit circuit booster gsm MRF6VP11KH MW6S004N MC44BS373