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    Rochester Electronics LLC MRFG35003N6T1

    RF MOSFET PHEMT FET 6V PLD-1.5
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    Freescale Semiconductor MRFG35003N6T1

    RF S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
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    Rochester Electronics MRFG35003N6T1 3,984 1
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    MRFG35003N6T1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRFG35003N6T1 Freescale Semiconductor 3.5GHZ 3W6V GAAS PLD1.5N Original PDF
    MRFG35003N6T1 Motorola Gallium Arsenide PHEMT RF Power Field Effect Transistor Original PDF

    MRFG35003N6T1 Datasheets Context Search

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    MRFG35003N6T1

    Abstract: A113
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 5, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6T1 Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in


    Original     		PDF MRFG35003N6 MRFG35003N6T1 MRFG35003N6T1 A113

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 replaced by MRFG35003N6AT1. MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,


    Original     		PDF MRFG35003N6 MRFG35003N6T1 MRFG35003N6AT1. MRFG35003N6T1

    0841

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003M6T1 Rev. 3, 6/2005 Gallium Arsenide PHEMT MRFG35003N6T1 MRFG35003M6T1 RF Power Field Effect Transistors Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Devices are unmatched and are characterized for use


    Original     		PDF MRFG35003M6T1 MRFG35003N6T1 MRFG35003M6T1 0841

    A113

    Abstract: MRFG35003M6T1 MRFG35003N6T1 MRFG35003M6
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003M6T1 Rev. 4, 1/2006 Replaced by MRFG35003N6T1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35003M6T1 MRFG35003N6T1. A113 MRFG35003M6T1 MRFG35003N6T1 MRFG35003M6

    marking 0836

    Abstract: 0841
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003M6T1 Rev. 3, 6/2005 Gallium Arsenide PHEMT MRFG35003N6T1 MRFG35003M6T1 RF Power Field Effect Transistors Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Devices are unmatched and are characterized for use


    Original     		PDF MRFG35003M6T1 MRFG35003N6T1 MRFG35003M6T1 marking 0836 0841

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003M6T1 Rev. 4, 1/2006 Replaced by MRFG35003N6T1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35003M6T1 MRFG35003N6T1.

    MRFG35003N6AT1

    Abstract: A113 MRFG35003N6T1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 replaced by MRFG35003N6AT1. MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,


    Original     		PDF MRFG35003N6 MRFG35003N6T1 MRFG35003N6AT1. MRFG35003N6T1 MRFG35003N6AT1 A113

    MRFG35003N6AT1

    Abstract: A113 MRFG35003N6T1 motorola marking pld-1.5 package TRANSISTOR J 5803
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 6, 1/2008 MRFG35003N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in


    Original     		PDF MRFG35003N6 MRFG35003N6T1 MRFG35003N6AT1 A113 MRFG35003N6T1 motorola marking pld-1.5 package TRANSISTOR J 5803

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF

    MC9S12XDP384

    Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb
    Text: Freescale Semiconductor Product Selector Guide Cross-Reference Quarter 3, 2005 SG1000CRQ32005 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the fifteen Freescale Semiconductor Product


    Original     		PDF SG1000CRQ32005 SG1000CRQ32005 MC9S12XDP384 MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb

    MMM6029

    Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
    Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular


    Original     		PDF SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications