TACAN 41 RF transistor
Abstract: RF transistors TACAN MICROSEMI RF TRANSISTOR MS2552 MS2575
Text: MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product
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MS2552
MS2552
MSC1665
TACAN 41 RF transistor
RF transistors
TACAN
MICROSEMI RF TRANSISTOR
MS2575
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Untitled
Abstract: No abstract text available
Text: MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1 Capability Input/Output Matching Overlay Geometry Metal/Ceramic Hermetic Package POUT = 325 W Min.
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Original
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PDF
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MS2552
MS2552
MSC1665
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Untitled
Abstract: No abstract text available
Text: MS2552 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The MS2552 device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1
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Original
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PDF
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MS2552
MS2552
MS2575
MSC1665
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