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    MSC81111 Search Results

    MSC81111 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSC81111 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    MSC81111 STMicroelectronics GENERAL PURPOSE AMPLIFIER APPLICATIONS RF and M Original PDF
    MSC81111 STMicroelectronics GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS Original PDF
    MSC81111 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF

    MSC81111 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSC81111

    Abstract: S010
    Text: MSC81111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC  PACKAGE P OUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010


    Original     		PDF MSC81111 MSC81111 S010

    MSC81111

    Abstract: 8 pin ic 293 Transistor B C 458
    Text: MSC81111 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MSC81111 is Designed for Class "C" Amplifier Applicatioons from 0.4 to 1.2 GHz, Supplied in Common Base Package. PACKAGE STYLE HLP-1 MAXIMUM RATINGS IC 600 mA VCB 35 V PDISS 21.8 W @ TC = 25 C TJ -65 C to +200 C


    Original     		PDF MSC81111 MSC81111 8 pin ic 293 Transistor B C 458

    MSC81111

    Abstract: S010 v5052
    Text: MSC81111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010


    Original     		PDF MSC81111 MSC81111 S010 v5052

    MSC81111

    Abstract: S010 C127318A
    Text: MSC81111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010


    Original     		PDF MSC81111 MSC81111 S010 C127318A

    tp2304

    Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
    Text: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12


    Original     		PDF AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 tp2304 TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit

    SO42

    Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
    Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002


    Original     		PDF PowerSO-10RF PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002 PD57006 PD57018 SO42 STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier

    MSC81002

    Abstract: common base amplifier MSC81111 MSC82306 MSC81005 MSC81010 MSC81020 MSC81058 S027 MSC81118
    Text: SILICON POWER TRANSISTORS GENERAL PURPOSE MICROWAVE TRANSISTORS This popular line of Class C discrete devices are characterized for common base amplifier applications in the UHF to S-Band frequency range. These devices are available in a variety of hermetic package style and are often used as


    Original     		PDF MSC81002 MSC81118 MSC82005 MSC82010 MSC82302 MSC82304 MSC82306 MSC82307 MSC83301 MSC83303 MSC81002 common base amplifier MSC81111 MSC82306 MSC81005 MSC81010 MSC81020 MSC81058 S027 MSC81118

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


    Original     		PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10

    SO42

    Abstract: sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100
    Text: Selection Guide April 2000 VHF/UHF and 900 MHz Cellular Applications TYPE FREQ. MHz POUT (W) Gain min. (dB) Vcc (V) Class (%) Efficiency (°C/W) RTHj-c PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S 520 520 520 520 520


    Original     		PDF PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S SO42 sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100

    TPV3100

    Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
    Text: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE


    Original     		PDF twF150-50F HF150-50S HF250-50 HF100-28 HF220-28 HF220-50 TVU014 HF75-50S ASAT25 ASI4003 TPV3100 TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A

    Untitled

    Abstract: No abstract text available
    Text: SILICON POWER TRANSISTORS GENERAL PURPOSE MICROWAVE TRANSISTORS This popular line of Class C discrete devices are characterized for common base amplifier applications in the UHF to S-Band frequency range. These devices are available in a variety of hermetic package style and are often used as


    Original     		PDF MSC81002 MSC81118 MSC81090 MSC81005 MSC81111 MSC81010 MSC81058 MSC81020 MSC81402 MSC82001

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    MSC81111

    Abstract: MSC83301 SOLO 15 MSC81002 MSC81005 MSC81010 MSC81020 MSC81058 MSC81118 MSC81402
    Text: SILICON POWER TRANSIS TORS MICROWAVE TFtANSiSK This popular line of Class C discrete devices are characterized for common base amplifier applications in the UHF to S-Band frequency range. These devices are available in a variety of hermetic package style and are often used as


    OCR Scan     		PDF MSC81002 MSC81118 MSC81005 MSC81111 MSC81406 MSC82001 MSC82003 MSC82005 MSC82010 MSC82302 MSC83301 SOLO 15 MSC81010 MSC81020 MSC81058 MSC81402

    Untitled

    Abstract: No abstract text available
    Text: / = 7 SGS-THOMSON ^ 7 /. M » l [ L I C T [ R i M [ ] @ g _ M S C 8 1 1 1 1 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EMITTER BALLASTED . REFRACTORY/GOLD METALLIZATION . VSWR CAPABILITY o o :1 @ RATED CONDITIONS


    OCR Scan     		PDF MSC81111 MSC81111

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON :IL[i g?GMD § M S C 8 1 111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EM ITTER BALLASTED ■ R E FR AC TO R Y /G O LD M ETALLIZATION ■ VSW R C APABILITY oo:1 @ RATED C O N D ITIO N S ■ HERM ETIC STRIPAC PACKAGE


    OCR Scan     		PDF MSC81111