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    MSG430C4 Search Results

    MSG430C4 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSG430C4 Panasonic SiGe HBT type For low-noise RF amplifier Original PDF

    MSG430C4 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG430C4 SiGe HBT type For low-noise RF amplifier Unit: mm • Features  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification


    Original     		PDF 2002/95/EC) MSG430C4

    5.5 GHz power amplifier

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG430C4 SiGe HBT type For low-noise RF amplifier Unit: mm • Features  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification


    Original     		PDF 2002/95/EC) MSG430C4 5.5 GHz power amplifier

    MSG430C4

    Abstract: No abstract text available
    Text: Transistors MSG430C4 SiGe HBT type For low-noise RF amplifier Unit: mm • Features  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification  Optimum for high-density mounting and downsizing of the equipment for


    Original     		PDF MSG430C4 125design, MSG430C4

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG430C4 SiGe HBT type For low-noise RF amplifier Unit: mm • Features 3 1 0.39+0.01 −0.03 1.00±0.05  Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) MSG430C4

    MSG430C4

    Abstract: 5.5 GHz power amplifier
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG430C4 SiGe HBT type For low-noise RF amplifier Unit: mm • Features  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification


    Original     		PDF 2002/95/EC) MSG430C4 MSG430C4 5.5 GHz power amplifier

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291