U4 Package
Abstract: No abstract text available
Text: MSiCSS10060 Compliant Silicon Carbide Schottky Power Rectifier 10A, 600V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 600 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to
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MSiCSS10060
O-257
MSiCSN10060
T4-LDS-0106-3,
U4 Package
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Untitled
Abstract: No abstract text available
Text: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing
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MSiCSS10060CC
T4-LDS-0106-1,
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Untitled
Abstract: No abstract text available
Text: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing
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Original
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PDF
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MSiCSS10060CC
T4-LDS-0106-1,
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Untitled
Abstract: No abstract text available
Text: MSiCSS10060 Compliant Silicon Carbide Schottky Power Rectifier 10A, 600V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 600 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to
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Original
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PDF
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MSiCSS10060
T4-LDS-0106-3,
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Untitled
Abstract: No abstract text available
Text: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing
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PDF
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MSiCSS10060CC
T4-LDS-0106-1,
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Untitled
Abstract: No abstract text available
Text: MSiCSN10060CC, CA, and D Available Silicon Carbide Dual Schottky Power Rectifier 10A, 600V ORDERABLE PART NUMBERS MSiCSN10060CC MSiCSN10060CA MSiCSN10060D Configuration Common Cathode Common Anode Doubler DESCRIPTION These dual 600 V rated SiC Schottky rectifiers are in a hermetically sealed package with
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MSiCSN10060CC
MSiCSN10060CA
MSiCSN10060D
O-257
T4-LDS-0106,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
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MSiCSN10060
MSiCSS10060
MSiCST10060
O-257AA)
T4-LDS-0109
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UA 741 SMD
Abstract: No abstract text available
Text: PRELIMINARY TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
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Original
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PDF
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MSiCSN10060CC
MSiCSN10060CA
MSiCSN10060D
MSiCSS10060CC
T4-LDS-0106
UA 741 SMD
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Untitled
Abstract: No abstract text available
Text: MSiCSN10060CC, CA, and D Available Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION These dual 600 V rated SiC Schottky rectifiers are in a hermetically sealed package with options for common cathode, common anode, and doubler configurations. They offer very
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Original
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PDF
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MSiCSN10060CC
O-257
MSiCSS10060CC
T4-LDS-0106,
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msc 0645
Abstract: No abstract text available
Text: MSiCSN10060 Silicon Carbide Schottky Power Rectifier 10A, 600V Available DESCRIPTION This 600 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to
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Original
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PDF
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MSiCSN10060
O-257
T4-LDS-0106-2,
msc 0645
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msc 0645
Abstract: No abstract text available
Text: MSiCSN10060 Available Silicon Carbide Schottky Power Rectifier 10A, 600V DESCRIPTION This 600 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to
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Original
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PDF
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MSiCSN10060
O-257
pa30376)
T4-LDS-0106-2,
msc 0645
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u3 smd
Abstract: MSICSN10060D
Text: PRELIMINARY TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
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Original
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PDF
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MSiCSN10060CC
MSiCSN10060CA
MSiCSN10060D
MSiCSS10060CC
MSiCSS10060CA
MSiCSS10060D
T4-LDS-0106
u3 smd
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Untitled
Abstract: No abstract text available
Text: MSiCSN10060 Available Silicon Carbide Schottky Power Rectifier 10A, 600V DESCRIPTION This 600 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to
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Original
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PDF
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MSiCSN10060
O-257
T4-LDS-0106-2,
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msc 0645
Abstract: No abstract text available
Text: MSiCSN10060CC, CA, and D Available Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION These dual 600 V rated SiC Schottky rectifiers are in a hermetically sealed package with options for common cathode, common anode, and doubler configurations. They offer very
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Original
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PDF
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MSiCSN10060CC
O-257
T4-LDS-0106,
msc 0645
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