DM05

Contextual Info: ADVANCE MICRON I 4 MEG TECHNOLOGY. INC. X MT3D49 9 DRAM MODULE DRAM 4 MEG M O D I IL F IV IW L /U L t. 4 m e g a b y te , 5v, FAST PAGE MODE X 9 FEATURES OPTIONS PIN ASSIGNMENT Front View 30-Pin SIMM (DD-2) — / ~ ö~ Vcc CAS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3

T3D19

Abstract: 30-pin simm memory "16m x 8" MT4C1024DJ MT3019 MT4C4001 30-pin SIMM
Contextual Info: [M IC R O N 1 MEG X MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line memory module • High-performance, CM OS silicon-gate process

Cherie

Abstract: t3d25
Contextual Info: |U 1IC =R O N DRAM k - _ Ä 2 56K X MT3D2569 9 DRAM MODULE 256K x 9 DRAM _ FAST PAGE MODE MT3D2569 LOW POWER, F EXTENDED V T F N n P D RF REFRESH (MT3D2569 L) M O D IW 1I^ FL — FEATURES MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 • Packages

t3d19

Abstract: MT4C1024DJ a7020
Contextual Info: [MICRON □PAM _ _ _ _ . . _ 1 MEG X MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM _ FAST-PAGE-MODE MT3D19 LOW POWER, EXTENDED REFRESH (M T3D19 L) MODULE \J L. t . IVIv y U FEATURES PIN ASSIGNMENT (Top View) • Industry-standard pinout in a 30-pin single-in-line

Contextual Info: M ICRON SEM ICONDUCTOR INC b3E D M IC R O N WÊ b lllS M T 1 MEG X 0 G D 7 cì b G b O 1» « P I R N MT3D19 9 DRAM MODULE 1 MEG X 9 DRAM DRAM MODULE FAST-PAGE-MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES • Industry-standard pinout in a 30-pin single-in-line

T3D19

Contextual Info: |V|IC =R O N 1 MEG DRAM MODULE 1 MEG X X M T3D19 9 DRAM M O D ULE 9 DRAM FAST-PAGE-MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES • Industry-standard pinout in a 30-pin single-in-line memory module • High-performance CMOS silicon-gate process

Contextual Info: MICRON TECHNOLOGY INC M ADVANCE IC R O N 4 MEG SSE T> m DRAM MODULE X MT3D49 9 DRAM MODULE b l l l S 4 tì 0004737 7TÔ • MRN 4 MEG x 9 DRAM - FEATURES • Industry standard pinout in a 30-pin, single-in-line m emory module • High-perform ance, CM OS silicon-gate process

256k 30-pin SIMM

Contextual Info: I^ IIC R O N 256K X MT3D2569 9 DRAM MODULE 256K X 9 DRAM DRAM MODULE FAST PAGE MODE MT3D2569 LOW POWER, EXTENDED REFRESH (MT3D2569 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line memory module • High-performance, CMOS silicon-gate process

MT3D49

Contextual Info: PRELIMINARY M IC R O N 4 MEG 4 MEG DRAM MODULE X MT3D49 9 DRAM MODULE 9 DRAM X FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Leadless 30-pin SIMM 30-Pin SIMM (DE-6) V cc CAS DQ1 AO A1

MT4C4M4

Contextual Info: ADVANCE I^ IIC R O N 4 MEG DRAM MODULE X MT3D49 9 DRAM MODULE 4 MEG x 9 DRAM FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply • Low power, 12mW standby; 775mW active, typical

MT4C1004

Contextual Info: ADVANCE I^ IIC Z R O N 4 MEG 4 MEG X MT3D49 9 DRAM MODULE 9 DRAM FAST PAGE MODE FEATURES • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply • Low power, 12mW standby; 775mW active, typical

Contextual Info: ADVANCE M IC R O N 4 MEG 4 MEG X MT3D49 9 DRAM MODULE 9 DRAM FAST PAGE MODE FEATURES • Industry standard pinout in a 30-pin, single-in-line memory m odule • High-performance, CMOS silicon-gate process • Single 5V ±10% pow er supply • Low power, 12mW standby; 775mW active, typical

T3D19

Contextual Info: M IC R O N 1 MEG X MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE (MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line m em ory module • High-perform ance, CM OS silicon-gate process

Contextual Info: ADVANCE 4 MEG DRAM MODULE 4 MEG X MT3D49 9 DRAM MODULE X 9 DRAM FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line m emory module • High-perform ance CM OS silicon-gate process • Single 5V ±10% pow er supply • Low power, 12mW standby; 775mW active, typical

MT3D19

Abstract: MT3D mt4c1024d
Contextual Info: [M IC R O N 1 MEG DRAM MODULE 1 MEG X MT3D19 9 DRAM MODULE 9 DRAM X FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin single-in-line memory module • High-performance CM OS silicon-gate process • Single 5V +10% pow er supply • Low power, 9mW standby; 625mW active, typical

T3D49

Abstract: FPM DRAM 30-pin SIMM MT4C1004
Contextual Info: ADVANCE |u iic : r o n 4 MEG X MT3D49 9 DRAM MODULE 4 MEG x 9 DRAM MODULE 4 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 30-pin, single-in-line m emory module (SIMM) • High-perform ance CM OS silicon-gate process

MT4C1024DJ

Abstract: MT302569
Contextual Info: MICRON I TECHNOLOGY. INC. SSE I> niCRON TECHNOLOGY INC • MT3D2569 256K x 9 DRAM M bill 5 4=1 G0DH7G7 T5Q ■ URN 256K x 9 DRAM DRAM MODULE FAST PAGE MODE MT3D2569 LOW POWER, EXTENDED REFRESH (MT3D2569 L) FEATURES • Industry standard pinout in a 30-pin single-in-line

mt3-0512

Abstract: MT3-2005SI MT324 MT3-DH05WI MT3-2415WI MT3-1212SI 20MHZ MT3HL12WI MT3HL15WI MT3-DH12WI
Contextual Info: MT3 3 WATT DC/DC CONVER TER, SINGLE & MULTIPLE OUTPUTS ELECTRICAL SPECIFICATIONS All specifications are typical at nominal input, full load INPUT SPECIFICATIONS Input Voltage Wide Range - 2:1. 5V/12V/20V/24V/48VDC Ultra Wide Range - 4:1.9-36VDC, 18-72VDC

Contextual Info: MT8D48 4 MEG X 8 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM MODULE 4 MEG X 8 4 MEGABYTE, 5V, FAST PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 30-pin single-in-line m emory module SIMM • High-perform ance CM OS silicon-gate process • Single 5V ±10% power supply

FPM DRAM 30-pin SIMM

Abstract: MT8048
Contextual Info: M IC R O N 4 iVIEG DRAM MODULE X MT8D48 3 DRAM MODULE 4 MEG X 8 4 MEGABYTE, 5V, FAST PAGE MODE FEATURES OPTIONS MARKING • Tim ing 60ns access 70ns access -6 -7 P ackages 3 0 -pin SIM M DRAM SIMM • JE D E C - and in d u stry -stan d ard pin ou t in a 30-pin

MT3D19

Abstract: MT4C4001 30-pin SIMM nsi 60 jg
Contextual Info: Ü H Ü MI CR ON T E C H N O L O G Y INC 3ûE D blUSM T 0QGS3SS S BIMRN f'.'ÜWI1Vt?»MBJHMU- '•MIWÆ' V •*' '» ¡PB ilr'itfliilri 1 MEG DRAM MODULE 9 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 30-pin single-in-line

Contextual Info: PRELIMINARY 4 MEG X 9 DRAM MOEDULE 5EM1CQHOUCTOR. IH£L 4 MEG DRAM MODULE X 9 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply

Contextual Info: MT8D88C132 S , MT16D88C232(S) 4MB, 8MB DRAM CARDS MICRON I TECHNOLOGY. INC. DRAM CARD 4,8 MEGABYTES 1 MEG, 2 MEG x 32; 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • OPTIONS MARKING • Timing 60ns access 70ns access -6

Contextual Info: PRELIMINARY M IC R O N • MT8D88C132V/432V S , MT16D88C232V/832V(S) 4MB, 8MB, 16MB, 32MB DRAM CARDS 4,8,16*, 32* megabytes DRAM CARD 1 MEG, 2 MEG, 4 MEG, 8 MEG x 32; 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (End View) 88-Pin Card (DF-3)