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    MT3S11FS Search Results

    MT3S11FS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT3S11FS Toshiba VHF~UHF Band Low-Noise Amplifier Applications Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS 2 5 3 4 fS6 1. Collector1 C1 2. Emitter1 (E1) 3. Collector2 (C2) 4. Base2 (B2) 5. Emitter2 (E2) 6. Base1 (B1)


    Original     		PDF MT6L11FS MT3S11FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 13


    Original     		PDF MT6L77FS MT3S11FS MT3S106FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Corresponding three-pin products: fSM mold products Symbol Q2 MT3S11FS MT3S11AFS Rating Q1 Q2 Unit Collector-base voltage


    Original     		PDF MT6L78FS MT3S11FS MT3S11AFS

    Untitled

    Abstract: No abstract text available
    Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11T MT3S11FS Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector- base voltage VCBO


    Original     		PDF MT6L11FS MT3S11T MT3S11FS)

    MT6L77FS

    Abstract: No abstract text available
    Text: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded


    Original     		PDF MT6L77FS MT3S11FS MT3S106FS MT6L77FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. (MT3S06FS) (MT3S11FS) Rating Symbol Unit Q1 Q2 Collector-base voltage


    Original     		PDF MT6L68FS MT3S06T MT3S06FS) MT3S11T MT3S11FS)

    MT3S11FS

    Abstract: No abstract text available
    Text: MT3S11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11FS Unit: mm 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 Superior performance in oscillator applications. Superior noise characteristics :NF = 2.4 dB, |S21e|2 = 3.5 dB f =2GHz 0.35±0.05


    Original     		PDF MT3S11FS MT3S11FS

    MT3S07FS

    Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05


    Original     		PDF MT6L63FS MT3S11FS) MT3S11T MT3S07FS) MT3S07T MT3S07FS MT3S07T MT3S11FS MT3S11T MT6L63FS

    MT3S07FS

    Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05


    Original     		PDF MT6L63FS MT3S11FS) MT3S11T MT3S07FS) MT3S07T MT3S07FS MT3S07T MT3S11FS MT3S11T MT6L63FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 fSM mold products Q2 MT3S11FS MT3S11AFS Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO 13 13 V Collector-emitter voltage


    Original     		PDF MT6L78FS MT3S11FS MT3S11AFS

    MT3S11FS

    Abstract: No abstract text available
    Text: MT3S11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11FS Unit: mm • 1 3 2 0.1±0.05 +0.02 Lead Pb -free. 0.8±0.05 1.0±0.05 0.48 -0.04 • Superior performance in oscillator applications. Superior noise characteristics 2 :NF = 2.4 dB, |S21e| = 3.5 dB (f =2GHz)


    Original     		PDF MT3S11FS MT3S11FS

    MT3S11FS

    Abstract: MT6L78FS
    Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 fSM mold products Q2 MT3S11FS MT3S11AFS 6 2 5 3 4 +0.02 Corresponding three-pin products: Q1 1 0.48 -0.04 Mounted Devices


    Original     		PDF MT6L78FS MT3S11AFS MT3S11FS MT3S11FS MT6L78FS

    200E-02

    Abstract: MT3S11FS
    Text: MT3S11FS SPICE parameters UCB SPICE 2G6 20031112 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S11FS 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0 8 0


    Original     		PDF MT3S11FS MT3S11FS 01E-07 92E-11 91E-14 77E-14 200E-02

    Untitled

    Abstract: No abstract text available
    Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11T MT3S11FS Corresponding three-pin products:TESM(fSM) mold products 6 2 5 3 4 +0.02 Q1/Q2 1 0.48 -0.04


    Original     		PDF MT6L11FS MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Rating Symbol


    Original     		PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    MT3S11FS

    Abstract: No abstract text available
    Text: MT3S11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11FS Unit: mm Superior performance in oscillator applications. Superior noise characteristics :NF = 2.4dB, |S21e|2 = 3.5dB f = 2 GHz 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 0.6±0.05


    Original     		PDF MT3S11FS MT3S11FS

    MT3S11FS

    Abstract: 01005
    Text: MT3S11FS 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S11FS 単位: mm OSC 用途に優れています。 • 低位相雑音タイプです。 • 電流依存性に非常に良い。 : NF = 2.4 dB⎪S21e⎪2 = 3.5 dB f = 2 GHz


    Original     		PDF MT3S11FS dBS21e2 MT3S11FS 01005

    Untitled

    Abstract: No abstract text available
    Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 fSM mold products 6 2 5 3 4 +0.02 Corresponding three-pin products: 1 0.48 -0.04 Mounted Devices Q1 Q2 MT3S11FS


    Original     		PDF MT6L78FS MT3S11FS MT3S11AFS

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. TESM(fSM) mold products Q2 MT3S07T MT3S11T (MT3S07FS)


    Original     		PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications Lead Pb -free.


    Original     		PDF MT6L78FS MT3S11FS MT3S11AFS

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


    Original     		PDF BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


    Original     		PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919

    JDV2S31CT

    Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。


    Original     		PDF BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000