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    Untitled

    Abstract: No abstract text available
    Text: niCRON SEMICONDU CTOR INC b'iE D • hlllSMT □ □ G tìtì3tì 'iflT ■ URN M IC R O N I MT4C16260 256K X 16 DRAM SIM,CONDUCTOR ISC. DRAM 256K X 16 DRAM ASYMMETRICAL, FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages


    OCR Scan     		PDF MT4C16260 024-cycle C-1994.

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N 256K WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • A ddress entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process


    OCR Scan     		PDF MT4C16260/1 500mW 024-cycle MT4C16261 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: |U llC R O N 256K MT4C16260 X 16 DRAM 256K x 16 DRAM DRAM FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages • A ddress entry: ten row -addresses, eight colum naddresses • H igh-perform ance CMOS silicon-gate process • Single +5V+10% pow er supply*


    OCR Scan     		PDF MT4C16260 375mW 024-cycle 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: JBL i»1M3 M IC R O N MT4C16260/1 256K x 16 WIDE DRAM I WIDE DRAM 256 K x 16 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process


    OCR Scan     		PDF MT4C16260/1 500mW 024-cycle MT4C16261 WT4C1C26G/1 C1993 MT4C1C260/1

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT4C16260/1 256Kx 16 D R AM MICRON SSE ]> Bi blllS4T 0004503 fiOb 2 5 6 K x 16 D R A M DRAM ASYMMETRICAL, T FAST PAGE MODE FEATURES • Industry standard xl6 pinouts, timing, functions and packages • Address entry: 10 row addresses, eight column


    OCR Scan     		PDF MT4C16260/1 256Kx 500mW MT4C16261

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY I^ IIC R O N 256K WIDE DRAM 256K X X MT4C16260/1 16 WIDE DRAM 16 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-perform ance CM OS silicon-gate process


    OCR Scan     		PDF MT4C16260/1 024-cycle MT4C16261 40-Pin 256KX

    KAH marking

    Abstract: ci983
    Text: M IC R O N I 11 — ^ MT4C16260/1 256Kx 16 WIDE DRAM WIDE DRAM 256K x 16 DRAM * ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process


    OCR Scan     		PDF 4C16260/1 256Kx 500mW 024-cycle MT4C16261 40-Pin MT4C16260/1 KAH marking ci983

    Untitled

    Abstract: No abstract text available
    Text: I * * • " /G PRELIMINARY MICRON I 256K SEMICONDUCTOR MC WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • In d u stry -stan d ard x l6 pinouts, tim ing, functions a n d packages • A ddress entry: ten row -addresses, eight colum naddresses


    OCR Scan     		PDF MT4C16260/1 500mW 024-cycle M74Cl626Q, C1993,

    009a9

    Abstract: No abstract text available
    Text: PRELIMINARY I^ i c h o n 256K X M T4C16260/1 16 WIDE DRAM 256K X 16 DRAM WIDE DRAM FEATURES • In d u stry -stan d a rd x l 6 p in o u ts, tim in g , fu n ctio n s an d p ack ag es • A d d re ss en try: ten ro w -a d d resses, eig h t c o lu m n ad d resses


    OCR Scan     		PDF T4C16260/1 024-cy MT4C16260/1 009a9

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b3E D • blll54T DGDflb3fl 302 HIMRN M T 4C 16260/1 256KX16 W ID ED R A M MICRON I s e m ic o n d u c t o rin c WIDE DRAM 256K X 1 6 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages


    OCR Scan     		PDF blll54T 500mW 024-cycle MT4C16260/1

    RCD 2226

    Abstract: No abstract text available
    Text: ADVANCE M T 4C 16260/1 256K X 16 DRAM M IC R O N DRAM 256K X 16 DRAM ASYMMETRICAL, FAST PAGE MODE FEATURES 40-Pin SOJ 40-Pin ZIP Q-6 (0-4) DQ9 1 DQ11 3 Vss 5 DQ14 • Masked Write Not Available Available 4 DQ12 6 DQ 13 B 9 Vcc 11 DQ15 12 D01 D 02 13 DQ4


    OCR Scan     		PDF 500mW MT4C16261 40-Pin RCD 2226

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N • 512K X SEMICONDUCTOR. MC WIDE DRAM 8 MT4C8512/3 WIDE DRAM 512K X 8 DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process


    OCR Scan     		PDF MT4C8512/3 350mW 024-cycle MT4C8513 28-Pin 256KX

    dram zip

    Abstract: No abstract text available
    Text: PRELIMINARY U | | C n D N 256K X M T4C 16260/1 16 W ID E DRAM 256K X 16 DRAM WIDE DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process


    OCR Scan     		PDF 500mW 024-cycle MT4C16261 40-Pin MT4C16260/1 dram zip