MT4C1M16E5
Abstract: MT4LC1M16E5 MT4LC1M16E5TGS
Text: 1 MEG x 16 EDO DRAM TECHNOLOGY, INC. MT4C1M16E5 MT4LC1M16E5 DRAM FEATURES • JEDEC- and industry-standard x16 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single power supply +3.3V ±0.3V or 5V ±10% • All inputs, outputs and clocks are TTL-compatible
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Original
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PDF
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MT4C1M16E5
MT4LC1M16E5
024-cycle
44/50-Pin
MT4C1M16E5
MT4LC1M16E5
MT4LC1M16E5TGS
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Untitled
Abstract: No abstract text available
Text: 1 MEG x 16 EDO DRAM TECHNOLOGY, INC. MT4C1M16E5 MT4LC1M16E5 DRAM FEATURES • JEDEC- and industry-standard x16 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single power supply +3.3V ±0.3V or 5V ±10% • All inputs, outputs and clocks are TTL-compatible
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Original
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PDF
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MT4C1M16E5
MT4LC1M16E5
024-cycle
44/50-Pin
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Untitled
Abstract: No abstract text available
Text: 1 MEG x 16 EDO DRAM |U|IC=RON MT4C1M16E5 MT4LC1M16E5 DRAM VrìfAlVl FEATURES • JEDEC- and industry-standard x l6 tim ing, functions, pinouts and packages • High-perform ance CM OS silicon-gate process • Single power supply +3.3V ±0.3V or 5V ±10%
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OCR Scan
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PDF
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024-cycle
44/50-Pin
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marking 1PC 6-pin
Abstract: No abstract text available
Text: 1 MEG x 16 EDO DRAM MICRON I TECHNOLOGY. INC. DRAM MT4C1M16E5 MT4LC1M16E5 FEATURES • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single power supply +3.3V ±0.3V or 5V ±10%
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OCR Scan
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PDF
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MT4C1M16E5
MT4LC1M16E5
024-cycle
marking 1PC 6-pin
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Untitled
Abstract: No abstract text available
Text: 1 M E G x 16 EDO DRAM V IIC Z R O N n P A V n * M M T4C 1M 16E 5 \ m M T4L C 1M 16E 5 FEATURES • JEDEC- and industry-standard x l6 tim ing, functions, pinouts and packages • High-perform ance CM OS silicon-gate process • Single pow er supply (+3.3V +0.3V or 5V ±10%
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OCR Scan
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PDF
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024-cycle
44/50-Pin
42-Pin
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