mt4lc2m8
Abstract: No abstract text available
Text: PRELIMINARY MT4LC2M8F4 2 MEG x 8 BURST EDO DRAM TECHNOLOGY, INC. BURST EDO DRAM 2 MEG x 8 FEATURES PIN ASSIGNMENT Top View 28-Pin SOJ (BA-2) • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5%
|
Original
|
28-Pin
048-cycle
mt4lc2m8
|
PDF
|
mt4lc2m8e7dj-6
Abstract: taa 723 uA 723 h
Text: MT4LC2M8E7 L 2 MEG x 8 DRAM TECHNOLOGY, INC. 2 MEG x 8 DRAM DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) • Industry-standard x8 pinout, timing, functions and packages • High-performance CMOS silicon-gate process
|
Original
|
150mW
048-cycle
mt4lc2m8e7dj-6
taa 723
uA 723 h
|
PDF
|
taa 723
Abstract: No abstract text available
Text: 2 MEG x 8 FPM DRAM TECHNOLOGY, INC. MT4C2M8B1 MT4LC2M8B1 DRAM FEATURES PIN ASSIGNMENT Top View • JEDEC- and industry-standard x8 pinouts, timing, functions and packages • High-performance, low power CMOS silicon-gate process • Single power supply (+3.3V ±0.3V or 5V ±10%)
|
Original
|
048-cycle
28-Pin
taa 723
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2 MEG x 8 EDO DRAM M IC R O N HRAM MT4LC2M8E7 MT4C2M8E7 U n M IV I FEATURES PIN ASSIGNMENT (Top View OPTIONS 28-Pin SOJ (DA-3) Vcc [ 1* DÛ1 [ 2. DQ2¿ 3 003 r 4 DQ4 5 WE# C 6 RAS# C 7 NCC 3 AIO L 9 A0 L 10 A1 C t t A2 12 A3 t 13 Vcc [ 14 MARKING • Voltages
|
OCR Scan
|
28-Pin
28-PiD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MT4LC2M8B1 S 2 MEG X 8 DRAM ¡v flic n n N DRAM 2 MEG x 8 DRAM 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH PIN ASSIGNMENT (Top View) • JE D E C - a n d in d u stry -sta n d a rd x8 p in o u ts, tim in g , fu n ctio n s an d p ack ag es • H ig h -p e rfo rm a n ce C M O S silico n -g a te process
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE M T4 L C2M 8B1/2 2 MEG x 8 DRAM I^ IIC Z R O N 2 MEG x 8 DRAM 5.0V FAST PAGE MODE (MT4C2M8B1/2) 3.0/3.3V, FAST PAGE MODE (MT4LC2M8B1/2) PIN ASSIGNMENT (Top View) • Industry standard x8 pinouts, timing, functions and packages • Address entry: 11 row, 10 column addresses (32ms);
|
OCR Scan
|
048-cycle
096-cycle
A0-A10;
|
PDF
|
precon meg
Abstract: No abstract text available
Text: 2 MEG X 8 FPM DRAM |V |!C = R O N HR AM MT4C2M8B1 MT4LC2M8B1 LSHAM VI FEATURES PIN ASSIGNMENT Top View OPTIONS 28-Pin SOJ (DA-3) 28 ] Vss V cc C 1 • 28 j Vss DQ1 C 2 27 1 DQ8 DQ1 C 2 27 ] DQ8 DQ2C 3 26 ] DQ7 DQ2C 3 26 ] DQ7 DQ3C 4 25 ] DQ6 DQ3 [ 4 25 ] DQ6
|
OCR Scan
|
048-cycle
28-Pin
D50-pm5
precon meg
|
PDF
|
c2m6b
Abstract: 4lc2m8
Text: MT4LC2M8B1 L 2 MEG X 8 DRAM fU IIC R O N DRAM 2 MEG x 8 DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) • JE D E C - and in d u stry -sta n d a rd x8 p in o u ts, tim in g , • • OPTIONS 28-Pin 300 mil SOJ (DA-3)
|
OCR Scan
|
048-cy
28-Pin
MT4LC2M88KL.
c2m6b
4lc2m8
|
PDF
|
MT4LC2M8E7
Abstract: No abstract text available
Text: 2 MEG x 8 EDO DRAM l^ lld R O N H P AM MT4LC2M8E7 MT4C2M8E7 U n M IV I FEATURES PIN ASSIGNMENT Top View OPTIONS 28-Pin SOJ (DA-3) 1• Vcc DQ1 c 2 DQ2C 3 □03 £ 4 DQ4C 5 WE# C 6 RAS# C 7 NCC 8 A 10L 9 A0 C 10 A l C 11 A2C 12 A3 13 Vcc 14 MARKING • Voltages
|
OCR Scan
|
28-Pin
MT4LC2M8E7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MT4LC2M8B1 L 2 MEG X 8 DRAM M IC R O N DRAM 2 MEG x 8 DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) 28-Pin 300 mil SOJ 28-Pin 400 mil SOJ (DA-3) (DA-4) V cc [ 1 • 28 ) Vss Vccf DQ1 [ 2 27 ] DQ8 DQ1 [ 2 28 ] Vss
|
OCR Scan
|
28-Pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R Q N I MT4LC2M8F4 2 MEG x 8 BURST EDO DRAM BURST EDO DRAM 2 MEG x 8 FEATURES PIN ASSIGNMENT Top View 28-Pin SOJ (DA-5) • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5%
|
OCR Scan
|
28-Pin
048-cycle
000xB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE MT4 L C2M8A1/2 S MEG X 8 WIDE DRAM WIDE DRAM 2 MEG X 8 DRAM 5.0V, S ELF REFRESH (MT4C2M8A1/2 S) 3.0/3.3V, S ELF REFRESH (MT4LC2M8A1/2 S) FEA TU RES PIN ASSIGNMENT (Top View) O PTIO NS M ARKIN G • Timing 60ns access 70ns access 80ns access -6 -7 -8
|
OCR Scan
|
28-pin
32-pin
A0-A11;
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MT4LC2M8E7 L 2 MEG X 8 DRAM M IC R O N 2 MEG x 8 DRAM DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH PIN ASSIGNMENT (Top View) • Industry-standard x8 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply
|
OCR Scan
|
150mW
048-cycle
28-Pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE |u i i c : r o n MT4LC2M8E7 S 2 MEG X 8 DRAM DRAM 2 MEG x 8 DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH a jj > FEATURES PIN ASSIGNMENT (Top View) • Industry-standard x8 pinout, tim ing, functions and packages • High-perform ance CM OS silicon-gate process
|
OCR Scan
|
200mW
048-cycle
28-Pin
|
PDF
|
|
|
c2m6b
Abstract: C2MF
Text: ADVANCE |viic: r MT4 L C2M8B1/2 S 2 MEG x 8 DRAM o n 2 MEG x 8 DRAM 5.0V SELF REFRESH (MT4C2M8B1/2 S) 3.0/3.3V, SELF REFRESH (MT4LC2M8B1/2 S) FEATURES PIN ASSIGNMENT (Top View) • SELF REFRESH, i.e. "Sleep M ode" • Industry standard x8 pinouts, tim ing, functions and
|
OCR Scan
|
256ms)
048-cycle
096-cycle
400mW
A0-A10
A0-A10;
c2m6b
C2MF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M IC R O N D24A 16 MEG DRAM DIE I DRAM DIE 16 MEG DRAM MT4C4M4B1D24A, MT4LC4M4B1D24A MT4LC2M8B1D24A, MT4LC1M16C3D24A FEATURES DIE OUTLINE Top View • • • • • • Single 5.0V (x4 only) or 3.3V (x4, x8, x l6) pow er supply Industry-standard x4, x8, x l6 timing and functions
|
OCR Scan
|
MT4C4M4B1D24A,
MT4LC4M4B1D24A
MT4LC2M8B1D24A,
MT4LC1M16C3D24A
|
PDF
|
4lc2m8
Abstract: No abstract text available
Text: MT4LC2M8E7 S 2 MEG X 8 DRAM ÍMICnON :fl TtCHWXOGV.WC. 2 MEG x 8 DRAM DRAM 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard x8 pinout, timing functions and packages • High-performance C M O S silicon-gale process • Single +3.3V ±0.3V pow er supply
|
OCR Scan
|
150mV'
048-cycle
28-Pin
T1995
Ct995.
4lc2m8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M I C R Q N FPM DRÂM MT4C2M8B1 MT4LC2M8B1 H R AM l^nMIVI FEATURES PIN ASSIGNMENT Top View • JEDEC- an d in d u stry -sta n d a rd x8 p in o u ts, tim ing, functions a n d packages • H igh-perform ance, low p o w er CM OS silicon-gate process • Single p o w er su p p ly (+3.3V +0.3V or 5V +10%)
|
OCR Scan
|
048-cycle
28-Pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: lU lli— P l - I IV I I . V J L Z MT4LC2M8E7 S 2 MEG x 8 DRAM DRAM 2 MEG x 8 DRAM 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN A S S I G N M E N T (Top View) * In d u stry -stan d ard x8 p in ou t, tim ing, fu n ction s and p ack ages
|
OCR Scan
|
048-cy
|
PDF
|
Untitled
Abstract: No abstract text available
Text: lU lli— P l - I IV I I . V J L Z MT4LC2M8B1 S 2 MEG x 8 DRAM DRAM 2 MEG x 8 DRAM 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN A S S I G N M E N T (Top View) JE D E C - and ind u stry -stan d ard x8 p in ou ts, tim ing, fu n ction s and p ackages
|
OCR Scan
|
28-Pin
|
PDF
|
Linear Technology ltage e3
Abstract: No abstract text available
Text: MT4LC2M8F4 2 MEG x 8 BURST EDO DRAM DRAM 2 MEG x 8 3.3V, BURST EDO FEATURES PIN ASSIGNMENT Top View • B urst o rd e r, in terle av e o r linear, p ro g ra m m e d by ex ecu tin g WCBR cycle after in itializatio n • S ingle +3.3V ±5% p o w e r s u p p ly
|
OCR Scan
|
048-cycle
28-Pin
10esses
Linear Technology ltage e3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE MT4 L C2M8A1/2 2 MEG X 8 WIDE DRAM M IC R O N WIDE DRAM 2 MEG X 8 DRAM 5.0V, FAST-PAGE-MODE (MT4C2M8A1/2) 3.0/3.3V, FAST-PAGE-MODE (MT4LC2M8A1/2) FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7
|
OCR Scan
|
28-Pin
28-pin
32-pin
A0-A11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2 MEG X 8 FPM DRAM MICRON HR AM MT4C2M8B1 MT4LC2M8B1 U r iM IV I FEATURES PIN ASSIGNMENT (Top View OPTIONS LC C • Packages Plastic 28-pin SOJ (300 mil) Plastic 28-pin SOJ (400 mil) Plastic 28-pin TSOP (300 mil) DJ DW TG • Timing 60ns access 28-Pin SOJ
|
OCR Scan
|
28-Pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE MT4 L C2M8B1/2 S 2 MEG X 8 WIDE DRAM M ICRO N WIDE DRAM 2 MEG X 8 DRAM 5.0V SELF REFRESH ÍMT4C2M8B1/2 S) 3.0/3.3V, SELF REFRESH (MT4LC2M8B1/2 S) FEATURES PIN A SSIG N M EN T (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access
|
OCR Scan
|
32-Pin
A0-A10;
|
PDF
|
