Untitled
Abstract: No abstract text available
Text: MT4S12832 128K X 32 SRAM M OD ULE jV U G IR O N 128Kx 32 SRAM SRAM MODULE FEATURES • High speed: 15*, 20,25 and 35ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process _ • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions
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MT4S12832
512KB
128Kx
64-Pin
S12832
MT4S12B32
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PDF
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400TYP
Abstract: No abstract text available
Text: M IC R O N 128K SRAM MODULE MT4S12832 32 SRAM MODULE X 128Kx 32 SRAM FEATURES PIN ASSIGNMENT Top View • High speed: 15*, 20, 25 and 35ns • High-density 512KB design • High-performance, low-power, CM OS double-metal process • Single +5V ±10% power supply
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MT4S12832
512KB
128Kx
64-Pin
W4S12832
400TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: |U |IC R O N 128K SRAM MODULE X MT4S12832 32 SRAM MODULE 128Kx 32 SRAM FEATURES • High speed: 15, 20 and 25ns • High-density 512KB design • High-perform ance, low-power, CM OS double-m etal process _ • Single +5V ±10% pow er supply • Easy m emory expansion w ith CE and OE functions
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OCR Scan
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MT4S12832
512KB
128Kx
64-Pin
30ontrolled)
MT4S12B32
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 55Z D b l l l S M 1 0 0 0 3 ^ 7 [ M IC R O N SRAM MODULE 128K X 037 IMRN MT4S12832 32 SRAM MODULE 128K X 32 SRAM NOTICE SEE ORDER OF DATA FOR ERRATA INFORMATION FEATURES • High speed: 15*, 20,25 and 35ns • High-density 512KB design
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OCR Scan
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MT4S12832
512KB
64-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: |U |C R O N MT4S12832 SRAM MODULE 128K X 32 SRAM FEATURES PIN ASSIGNMENT Top View Industry com patible pinout High speed: 20, 25, 35 and 45ns H igh-density 512K B design H igh-perform ance, Iow-power, CM O S process Single +5V ±10% pow er supply Easy m em ory expansion with CE function
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MT4S12832
64-Pin
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PDF
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MT4S12832
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC m i c r o b?E 5 • hlllSHT OOCHbbb lb4 ■ MRN n 128K SRAM MODULE X MT4S12832 32 SRAM MODULE 128Kx 32 SRAM FEATURES • High speed: 15*, 20,25 and 35ns • High-density 512KB design • High-performance, low-power, CMOS double-metal
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OCR Scan
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MT4S12832
512KB
128Kx
64-Pin
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PDF
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MT4S12832
Abstract: No abstract text available
Text: MICRON I 128K SEMICONDUCTOR INC SRAM MODULE X MT4S12832 32 SRAM MODULE 128Kx 32 SRAM FEATURES • High speed: 15,20 and 25ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply _ • Easy memory expansion with CE and OE functions
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OCR Scan
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MT4S12832
512KB
64-pin
MT4S12832M-15
128Kx
b11154e
G01D551
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 3flE D • b l l l S H T 0002=173 *\ « M R N 7 - ^ - 2 3 '^ 128K x 32 SRAM SRAM MODULE FEATURES • Industry compatible pinout • High speed: 25ns, 35ns and 45ns • High-density 512KB design • High-performance, low-power, CMOS process
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512KB
64-Pin
T-46-23-14
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PDF
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