Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT5LC1005 256K X 4 SRAM M IC R O N SRAM 256Kx 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I / O pins are 5V tolerant • High speed: 1 5 ,1 7 ,2 0 and 25ns • High-perform ance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply
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MT5LC1005
256Kx
28-Pin
C1005
00103b!
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Untitled
Abstract: No abstract text available
Text: MI CR ON S E M I C O N D U C T O R INC b7E D • b l l l S M 6! D Q O T H S O TBS H 1 M R N ADVANCE I^ IIC R O N MT5LC1005 256K X 4 SRAM SRAM 256Kx 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/O pins are 5V tolerant • High speed: 15,1 7 ,2 0 ,2 5 ,3 5 and 45ns
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MT5LC1005
256Kx
28-Pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY |V|IC=RON 256K SRAM MODULE X MT8LS25632 32 SRAM MODULE 256K X 32 SRAM LOW VOLTAGE FEATURES • High speed: 17,20 and 25ns • High-density 1MB design • High-performance, low-power, CMOS double-metal process • Single +3.3V ± 0.3V power supply
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MT8LS25632
64-Pin
DDlG57b
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b?E T> m b l l l S ^ DOO'ìb'ìD 4fl3 B U R N PRELIMINARY MICRON SF.ì.liCONDllCTORINC B 256K SRAM MODULE X MT8LS25632 32 SRAM MODULE 256K X 32 SRAM LOW VOLTAGE • High speed: 20*, 25 and 35ns • High-density 1MB design • High-performance, low-power, CMOS double-metal
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MT8LS25632
64-Pin
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S18A
Abstract: No abstract text available
Text: MICRO N S E M I C O N D U C T O R INC b'lE T> m b l U S H 6 O D O T T l ? SIB • MRN AVAILABLE AUGUST 94 MICRON I S18A 1 MEG SRAM DIE SEMICONDUCTOR INC SRAM DIE 1 MEG SRAM 1 Meg X 1, 256K x 4 and 128K x 8 FEATURES DIE OUTLINE Top View) • • • • High speed: 12,15 and 20ns
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150mm
210x5
334x12
135x135
S18A
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T5LC 1005 256K X 4 SR AM MICRON 256K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE FEATURES • High speed: 20,25,35 and 45ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply • Easy memory expansion with CE and OE options
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28-Pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M T 5 L C 1 005 256K X 4 SRAM I^ I C Z R O N 256K X 4 SRAM SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I / O pins are 5V tolerant • High speed: 1 5 ,1 7 ,2 0 and 25ns • High-perform ance, low-power, CM OS double-m etal process _ • Single +3.3V ±0.3V power supply
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28-Pin
T5LC1005
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N I MT8LS25632 256K X 32 SRAM MODULE SeUiCONDuL'OK INC SRAM MODULE 256K x 32 SRAM LOW VOLTAGE FEATURES • High speed: 20*, 25 and 35ns • High-density 1MB design • High-performance, low-power, CMOS double-metal process • Single +3.3V ± 0.3V power supply
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MT8LS25632
64-Pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT8LS25632 2 5 6 K X 32 SRAM MODULE SRAM MODULE 256K X 32 SRAM LOW VOLTAGE FEATURES • H igh speed: 17,20 a n d 25ns • H igh-density 1MB design • H igh-perform ance, low -pow er, CMOS double-m etal process • Single +3.3V ± 0.3V p ow er supply
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MT8LS25632
64-Pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T 5L C 1005 256K X 4 SRAM |V|IC=RON 256Kx 4 SRAM SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I / O pins are 5V tolerant • High speed: 15,1 7 , 20, 25, 35 and 45ns • High-perform ance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply
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256Kx
28-Pin
T5LC1005
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