MTM24N45 Search Results

MTM24N45 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MTM24N45E		Motorola	FET Transistor: TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate		Original	PDF
MTM24N45E		Unknown	FET Data Book		Scan	PDF
MTM24N45E		On Semiconductor	TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate		Scan	PDF
MTM24N45E		On Semiconductor	Transistor Mosfet N-CH 450V 24A 2TO-204AE		Scan	PDF

MTM24N45 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTM24N45E TO-3 N-CHANNEL POWER MOSFET ABSOLUTE MAXIMUM RATING: Drain – Source Voltage	Original	MTM24N45E	PDF
TFK S 417 T Abstract: tfk s 417 TFK U 3201 M tfk 830 tfk 417 500C AN569 MTM24N45E tfk 145 TFK A 6 Text: Order this data sheet by MTM24N45E/D IMOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Designer’s TMOS Data sheet MTM24N45E E-FET ~,., \ r High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.	Original	MTM24N45E/D MTM24N45E do2510 97A-02 O-204AE TFK S 417 T tfk s 417 TFK U 3201 M tfk 830 tfk 417 500C AN569 MTM24N45E tfk 145 TFK A 6	PDF
MTH13N50 Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50 Text: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:	Original	MJE8502A O-220AB/TO-220: MJF16010A O-254 MJF16018 MJF16206 MTH13N50 MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50	PDF
FRO 24N Abstract: DS3905 Text: M OT OR OL A SC XSTRS/R F Order this data sheet by MTM24N45E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4bE D b3b?as4 b mw\hT&9-/5 Designer's Data Sheet M TM 24N 45E T M O S E-FET High Energy P o w er FET N-Channel Enhancement-Mode Silicon Gate T M O S POWER FET	OCR Scan	MTM24N45E/D 97A-02 O-204AE MTM24N45E FRO 24N DS3905	PDF
MTM24N45E Abstract: 2N3904 AN569 DS3905 2N3904 on semiconductors application note 2N3904 MOTOROLA Text: Order this data sheet by MTM24N45E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET High Energy Power FET N-Channel Enhancem ent-Mode Silicon Gate T M O S PO W ER FET 24 A M P E R E S This advanced high voltage TMOS E-FET is designed to with	OCR Scan	MTM24N45E/D MTM24N45E/D MTM24N45E 2N3904 AN569 DS3905 2N3904 on semiconductors application note 2N3904 MOTOROLA	PDF
TO204AE Abstract: MTM55N10 MTM25N06L MTM45N12 MDT 1200 MTM25N05L MTM35N05 MTM50N05E 251C MTM20N15 Text: - m m £ ± A Vd s or £ t II £ Vg s V Id (V) MTM20N15 MOT N 150 + 20 MTM2DP06 MOT P -60 ± 2 0 I dss IGSS Pd /CH Vd g 3 fê (Ta-25°G) V g s th> min * /CH (W) (A) 201 (nA) Vg s (V) (m a Vd s (V) ) 150 500 20 250 -20 125 ±100 ±20 -200 % (V) i o (on)	OCR Scan	Ta-25 MTM20N15 O-204AE MTM20P06 T0-204AA MTM20P08 O-20450 MTM60N05 TO204AE MTM55N10 MTM25N06L MTM45N12 MDT 1200 MTM25N05L MTM35N05 MTM50N05E 251C	PDF