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Rochester Electronics LLC MTP1N60E N-CHANNEL POWER MOSFET
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MTP1N60 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
MTP1N60	Motorola	European Master Selection Guide 1986	Scan	PDF
MTP1N60	Motorola	Power Field Effect Transister N-Channel Enhancement Mode Silicon Gate	Scan	PDF
MTP1N60	Motorola	N-channel TMOS power FET. 600 V, 1 A, Rds(on) 12 Ohm.	Scan	PDF
MTP1N60	Motorola	Switchmode Datasheet	Scan	PDF
MTP1N60	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MTP1N60	Unknown	FET Data Book	Scan	PDF
MTP1N60	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MTP1N60	Semiconductor Technology	High Voltage MOS Power Field Effect Transistors	Scan	PDF
MTP1N60E	Motorola	TMOS E-FET Power Field Effect Transistor	Original	PDF
MTP1N60E	On Semiconductor	1 Amp TO-220AB, N-Channel, VDSS 600	Original	PDF
MTP1N60E	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
MTP1N60E	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 600V, .5A, Pkg Style TO220AB	Scan	PDF
MTP1N60E/D	On Semiconductor	TMOS POWER FET 1.0 AMPERES 600 VOLTS	Original	PDF
MTP1N60E-D	On Semiconductor	Power MOSFET 1 Amp, 600 Volts N-Channel TO-220	Original	PDF

MTP1N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MTP1N60 Abstract: mtp1n Text: MTP1N60E Preferred Device Power MOSFET 1 Amp, 600 Volts N−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, the MOSFET is designed to	Original	MTP1N60E O-220 r14525 MTP1N60E/D MTP1N60 mtp1n	PDF
MTP1N60E Abstract: AN569 MTP1N60 Text: MTP1N60E Preferred Device Power MOSFET 1 Amp, 600 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to	Original	MTP1N60E r14525 MTP1N60E/D MTP1N60E AN569 MTP1N60	PDF
AN569 Abstract: MTP1N60E Text: MOTOROLA Order this document by MTP1N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP1N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 600 VOLTS	Original	MTP1N60E/D MTP1N60E MTP1N60E/D* AN569 MTP1N60E	PDF
Untitled Abstract: No abstract text available Text: Jbztni-L.onaucto'i iJ^ , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel Mosfet Transistor MTP1N60 FEATURES • Drain Current -ID= 1A@ TC=25°C • Drain Source Voltage: VDSS= 600V(Min)	Original	MTP1N60 O-251	PDF
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP1N60E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	MTP1N60E O-220	PDF
MTP1N60 Abstract: mtp1n Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP1N60 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	O-220 MTP1N60 MTP1N60 mtp1n	PDF
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N	PDF
mosfet cross reference Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local	Original		PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
AND8078 Abstract: NCP1052b q2n3904 NCP1200P60 Transistor Q2N3904 D1N5242 simulation flyback converter Christophe Basso 1N4937 pspice npn q2n3904 Text: AND8078/D A Simple Low-Cost Non-Isolated Universal Input Off-Line Converter Prepared by: Roland Saint–Pierre Field Applications Engineer http://onsemi.com APPLICATION NOTE INTRODUCTION Switch–mode off–line power conversion typically entails a means of galvanic isolation from primary to secondary. In	Original	AND8078/D r14525 AND8078 NCP1052b q2n3904 NCP1200P60 Transistor Q2N3904 D1N5242 simulation flyback converter Christophe Basso 1N4937 pspice npn q2n3904	PDF
transistor mosfet buv18a Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9	Original		PDF
mgb20n40cl Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to	Original	smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V	PDF
transistor marking code 12W SOT-23 Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada	Original	SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp	PDF
3N60 Abstract: No abstract text available Text: Power Management IPS102 IN-PLUG series: IPS102 Critical Mode PFC Controller Low Cost, High Efficiency PRELIMINARY REV. 5 INTRODUCTION FEATURES DESCRIPTION  The IN-PLUG IPS102 is a primary-side switching controller which provides simple yet high performance active power factor correction PFC .	Original	IPS102 IPS102 1290-B AADS00002/AA605M 3N60	PDF

Q817C Abstract: flyback transformer diagram crt Text: Synchronizable Flyback Controller IPS1 6 Pr eliminar y Dat asheet Rev. 2 IN-PLUG series Low Cost, High Efficiency, Low Power Synchronizable Flyback Controller IPS1 6 PRELIMINARY DATASHEET REV2 INTRODUCTION DESCRIPTION The IN-PLUG® IPS16 has been designed for low-cost,	Original	IPS16 IPS15 1290-B Q817C flyback transformer diagram crt	PDF
NTP3055AV Abstract: NTP3055 irf630 irf640 MTP5P25 IRF540 MTB1306 MTB3N100ET4 MTB3N60ET4 0708B MTP6N60E equivalent Text: PRODUCT / PROCESS CHANGE NOTIFICATION UPDATE Generic Copy 08-DEC-2000 SUBJECT: Update Notification #10395 TITLE: Modification To PCN #10344 EFFECTIVE DATE: 17-Mar-2001 AFFECTED CHANGE CATEGORY S : Subcontractor Assembly Site Subcontractor Test Site Assembly Process	Original	08-DEC-2000 17-Mar-2001 S21431 RYFV70 MTB8N50E MTB8N50ET4 MTP10N10E MTP10N10EL MTP10N40E MTP12N10E NTP3055AV NTP3055 irf630 irf640 MTP5P25 IRF540 MTB1306 MTB3N100ET4 MTB3N60ET4 0708B MTP6N60E equivalent	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M TP1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N60E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination	OCR Scan	TP1N60E/D TP1N60E MTP1N60E/D	PDF
MTP2P45 Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85 Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5	OCR Scan	O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP2P45 MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85	PDF
MTP3N80 Abstract: MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60 Text: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5	OCR Scan	T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP3N80 MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60	PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan		PDF
MFE9200 Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E Text: MOTOROLA SC XSTRS/R IM E F D \| b3b?254 O O fl'ìB n 1 \| Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com	OCR Scan	DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E	PDF
k 3561 MOSFET Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20 Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con	OCR Scan	DK101 O-22QAB k 3561 MOSFET TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20	PDF
P1N55 Abstract: MTP1N55 MTP1N60 100SC reco relay Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M T P 1N 55 M T P 1N 60 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 1 AMPERE rDS on = 12 OHMS 550 and 600 VOLTS These TM OS Power FETs are designed for high voltage, high	OCR Scan	MTP1N55, P1N55 MTP1N55 MTP1N60 100SC reco relay	PDF

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MTP1N60 Search Results

MTP1N60 Price and Stock

Rochester Electronics LLC MTP1N60E

onsemi MTP1N60E

MTP1N60 Datasheets (14)

MTP1N60 Datasheets Context Search

MTP1N60

MTP1N60E

AN569

Untitled

Untitled

MTP1N60

MC68B21CP

mosfet cross reference

sn76131

AND8078

transistor mosfet buv18a

mgb20n40cl

transistor marking code 12W SOT-23

3N60

Q817C

NTP3055AV

Untitled

MTP2P45

MTP3N80

triac zd 607

EATON CM20A

MFE9200

k 3561 MOSFET

P1N55