MTP55N06Z Search Results

MTP55N06Z Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MTP55N06Z		On Semiconductor	TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate		Original	PDF
MTP55N06Z		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
MTP55N06Z/D		On Semiconductor	TMOS POWER FET 55 AMPERES 60 VOLTS		Original	PDF

MTP55N06Z Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MTP55N06Z Abstract: TMOS E-FET Text: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 18 mΩ This advanced high voltage TMOS E–FET is designed to	Original	MTP55N06Z/D MTP55N06Z MTP55N06Z TMOS E-FET	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP55N06Z TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 16 mΩ This advanced high voltage TMOS E–FET is designed to	Original	MTP55N06Z/D MTP55N06Z MTP55N06Z/D*	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
TRANSISTOR MOTOROLA MAC 223 Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),	Original		PDF
mgb20n40cl Abstract: MOTOROLA 136 DPAK MPIC2112DW MPIC2131FN mtd1p50e MPIC2151D MTP75N06 MMDF4N02 MTB3N120E mc6530 Text: Example of exceptions: MTD/MTP3055E Example of exceptions: MTD/MTP2955E CHANNEL POLARITY, N OR P VOLTAGE RATING DIVIDED BY 10 OPTIONAL SUFFIX: L FOR LOGIC LEVEL E FOR ENERGY RATED T4 FOR TAPE & REEL DPAK/D2PAK RL FOR TAPE & REEL (DPAK/D3PAK) HD FOR HIGH CELL DENSITY	Original	MTD/MTP3055E MTD/MTP2955E MTP75N06HD O-220 O-220 O-247 O-264 OT-227B MMSF4P01HDR1 SG265/D mgb20n40cl MOTOROLA 136 DPAK MPIC2112DW MPIC2131FN mtd1p50e MPIC2151D MTP75N06 MMDF4N02 MTB3N120E mc6530	PDF
TP55N Abstract: No abstract text available Text: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high vo ltag e TMOS E -F E T is designed to withstand high energy in the avalanche mode and switch efficiently.	OCR Scan	MTP55N06Z/D TP55N	PDF