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    MTY14N100E Price and Stock

    Rochester Electronics LLC MTY14N100E

    N-CHANNEL POWER MOSFET
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    DigiKey MTY14N100E Bulk
    • 1 -
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    Motorola Semiconductor Products MTY14N100E

    MOSFET Transistor, N-Channel, TO-264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MTY14N100E 13
    • 1 $17.3507
    • 10 $15.4228
    • 100 $15.4228
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    MTY14N100E 4
    • 1 $9.765
    • 10 $4.8825
    • 100 $4.8825
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    onsemi MTY14N100E

    14A, 1000V, 0.8ohm, N-Channel Power MOSFET, TO-264AA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MTY14N100E 1,900 1
    • 1 $4.86
    • 10 $4.86
    • 100 $4.57
    • 1000 $4.13
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    MTY14N100E Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTY14N100E On Semiconductor TMOS E-FET Power Field Effect Transistor Original PDF
    MTY14N100E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTY14N100E Motorola TMOS Power FET 14 Amp 1000 Volts Scan PDF
    MTY14N100E/D On Semiconductor TMOS POWER FET 14 AMPERES 1000 VOLTS Original PDF
    MTY14N100E-D On Semiconductor TMOS E-FET Power Field Effect Transistor N-Channel Original PDF
    MTY14N100EG On Semiconductor Transistor Mosfet N-CH 1000V 14A 3TO-264 RAIL Original PDF

    MTY14N100E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: MTY14N100E 340G
    Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 1000 VOLTS


    Original     		PDF MTY14N100E/D MTY14N100E MTY14N100E/D* AN569 MTY14N100E 340G

    Untitled

    Abstract: No abstract text available
    Text: MTY14N100E TMOS E−FET. Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with fast recovery


    Original     		PDF MTY14N100E MTY14N100E/D

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    HC 148 TRANSISTOR

    Abstract: AN569 MTY14N100E
    Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TY14N 100E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high


    OCR Scan     		PDF MTY14N100E/D Speci100E 340G-02 O-264 HC 148 TRANSISTOR AN569 MTY14N100E

    Untitled

    Abstract: No abstract text available
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's D ata S heet M TY14N100E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high


    OCR Scan     		PDF MTY14N100E