sot-363 n-channel mosfet
Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Text: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel
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CMKDM3590
CMKDM7590
CMKDM3575
OT-363
CMKDM3590:
CMKDM7590:
CMKDM3575:
RATI150
CMKDM7590
sot-363 n-channel mosfet
sot-363 p-channel mosfet
Dual N-Channel mosfet sot-363
marking code 12 SOT-363 amplifier
high current sot-363 p-channel mosfet
MARKING 3C5
Dual P-Channel mosfet sot-363
SOT-363 marking th
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CMLDM7005
Abstract: Power MOSFET p-Channel n-channel dual CMLDM8005 TR
Text: Product Brief CMLDM7005 Dual, N-Channel CMLDM8005 (Dual, P-Channel) CMLDM7585 (N & P-Channel) SOT-563 20V, 650mA Dual, Complementary MOSFETs in the miniature SOT-563 package N-Channel P-Channel N & P-Channel Typical Electrical Characteristics Central Semiconductor’s CMLDM7005 (Dual, N-Channel),
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CMLDM7005
CMLDM8005
CMLDM7585
650mA
OT-563
OT-563
CMLDM7005
Power MOSFET p-Channel n-channel dual
CMLDM8005 TR
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uPA67
Abstract: SC74A uPA672T UPA572T upa500 uPA600 UPA607T
Text: DUAL N & P CHANNEL SMALL SIGNAL MOSFETS µPA500 & µPA600 SERIES • DUAL N CHANNEL, DUAL P CHANNEL AND A COMBINED N AND P CHANNEL • DRAIN CURRENTS LESS THAN 200mA • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 1.5V N Type 1 5 1 2 P Type 2 4 5 3 1 N Type 4
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PA500
PA600
200mA
PA572T
PA672T
PA502T
PA602T
PA606T
PA611TA
PA573T
uPA67
SC74A
uPA672T
UPA572T
upa500
uPA600
UPA607T
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M2SK3295
Abstract: M2SK3354 2SK2499 2SK3296 M2SK3355 umos varistor 2754 2SK3355 PA1700A PA1707
Text: LINEUP POWER MOSFET SERIES UMOS II Kazuhiro Yamada UMOS I process Planar process G S i UMOS II process G S S G n+ n+ n+ p p p n- n- n- n+ n+ i D i D n+ D Fig. 1 Cross Sectional View of Cell Structure Ron Ω N channel VDSS: 60 V Package: TO-220 RDS(on) indicates the TYP value
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O-220
2SK2499
2SK2826
2SK3355
PA1855
0V/23m
2SK3295
2SK3296
2SK3365
2SK3367
M2SK3295
M2SK3354
2SK2499
M2SK3355
umos
varistor 2754
2SK3355
PA1700A
PA1707
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40841
Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
Text: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of
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CA3096
CA3096C,
CA3096,
CA3096A
CA3096A,
CA3096C
40841
40841 MOSFET
CA3096AE
CA3096
CA3096AM
CA3096AM96
CA3096CE
CA3096E
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CMSDM7590
Abstract: marking CODE 75C Complementary MOSFETs logic level complementary MOSFET
Text: Central CMSDM3590 N-CH CMSDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSDM3590 and CMSDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs
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CMSDM3590
CMSDM7590
CMSDM3590
OT-323
CMSDM3590:
CMSDM7590:
200mA
marking CODE 75C
Complementary MOSFETs
logic level complementary MOSFET
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marking code R
Abstract: MARKING CODE W
Text: Central CMBDM3590 N-CH CMBDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBDM3590 and CMBDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs
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CMBDM3590
CMBDM7590
CMBDM3590:
CMBDM7590:
OT-923
200mA
CMBDM7590
marking code R
MARKING CODE W
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CMUDM7590
Abstract: on semiconductor marking code sot CMUDM3590
Text: Central CMUDM3590 N-CH CMUDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM3590 and CMUDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs
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CMUDM3590
CMUDM7590
CMUDM3590
OT-523
CMUDM3590:
CMUDM7590:
200mA
CMUDM7590
on semiconductor marking code sot
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MOSFET P-channel SOT-23
Abstract: Power MOSFET N-Channel sot-23 CMPDM7590 C759 CMPDM3590 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET
Text: Central CMPDM3590 N-CH CMPDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM3590 and CMPDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs
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CMPDM3590
CMPDM7590
CMPDM3590
OT-23
CMPDM3590:
CMPDM7590:
200mA
MOSFET P-channel SOT-23
Power MOSFET N-Channel sot-23
C759
C359
sot-23 P-Channel MOSFET
MOSFET P channel SOT-23
P-Channel SOT-23 Power MOSFET
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Untitled
Abstract: No abstract text available
Text: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description 500V breakdown voltage Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage
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TC1550
TC1550
DSFP-TC1550
A091608
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FDMJ1032C
Abstract: marking 032 SC-75 Dual N & P-Channel
Text: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement
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FDMJ1032C
FDMJ1032C
marking 032
SC-75
Dual N & P-Channel
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RTJC
Abstract: No abstract text available
Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s
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FDD8424H
FDD8424H
RTJC
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM14615AA-N •General Description ELM14615AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. With N-channel(N-ch) and P-channel(P-ch) packed in one IC.ELM14615AA-N also includes ESD-protected function.
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ELM14615AA-N
ELM14615AA-N
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FDS8958B
Abstract: CQ238
Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's
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FDS8958B
FDS8958B
CQ238
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Untitled
Abstract: No abstract text available
Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's
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FDS8958B
FDS8958B
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FDS8858
Abstract: No abstract text available
Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s
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FDS8858CZ
FDS8858
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FDS8858CZ
Abstract: fds8858
Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s
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FDS8858CZ
FDS8858CZ
fds8858
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Untitled
Abstract: No abstract text available
Text: TD3002Y mgs5SS N- and P-Channel Half-Bridge MOSFETs_ SO PACKAGE PRODUCT SUMMARY V BR|DSS N-Channel 60 P-Channel -60 r°?r 5 N-souRCE n~ •d N-GATE o ; (A p -s o u r c e 0.41 10 r r P-GATE ~TI N-DRAIN ~n N-DRAIN ~T~| P-DRAIN ~T~I P-DRAIN
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TD3002Y
VNDS06
VPDS06
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TD3001
Abstract: No abstract text available
Text: TD3001Y N- and P-Channel Half-Bridge MOSFETs 'Siliconix incorporated SO PACKAGE PRODUCT SUMMARY N-souRCE r r >d V ’X ’ (A) N-Channel 30 1.5 0.61 P-Channel -30 2 0.39 V (BR)DSS T I N-DRAIN N-GATE r r ~ l~ l N-DRAIN p-souRCE r r ~1~| P-DRAIN P-GATE C E
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TD3001Y
TD3001
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Untitled
Abstract: No abstract text available
Text: | p| j -0 p p Q j j Q p| Q | Provisional Data Sheet No. PD-9.334E I R Rectifier JANTX2N6758 HEXFET POWER MOSFET JANTXV2N6758 [REF:MIL-PRF-19500/542] [GENERIC:IRF230] N -C H A N N E L 200 Volt, 0.40Q HEXFET
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JANTX2N6758
JANTXV2N6758
MIL-PRF-19500/542]
IRF230]
JANTX2N6758,
JANTXV2N6758
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FDS6679AZ
Abstract: No abstract text available
Text: SEM IC O N D U C TO R FDS6679AZ P-Channel PowerTrench® MOSFET -30V, -13A, 9mQ General Description Features T h is P -C h a n n e l M O S F E T is p rod u cte d u sing Fa irchild S e m ic o n d u c to r’s a d va n ce d P o w e rT re n ch p roce ss th a t has
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FDS6679AZ
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FA04
Abstract: OP37 PA04 PA07 MOSFET AMPLIFIER jerry steele mosfet op amp
Text: S im p le C ir c u it D esig n T e c h n iq u e s A p p lie d To N e w MOSFET P o w e r Op Amps P r o d u c e H ig h L i n e a r i t y A n d B a n d w id th W ith o u t S a c r if ic in g A c c u ra c y A n d S ta b ility . D esign Techniques fo r MOSFET P ow er Op Amps
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gain-of-100
FA04
OP37
PA04
PA07
MOSFET AMPLIFIER
jerry steele
mosfet op amp
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Complementary MOSFET Half Bridge
Abstract: NDS8839H DIODE PJ 57
Text: M arch 1 9 9 6 N N DS8839H Complementary MOSFET Half Bridge General Description Features T h e se C o m p le m e n ta ry M O SFET h a lf b rid g e dev ices a re p ro d u c e d u sin g N atio n a l's p ro p rie ta ry , h ig h cell d e n sity , DMOS te c h n o lo g y .
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NDS8839H
NDS8839H
0D33347
Complementary MOSFET Half Bridge
DIODE PJ 57
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SI9950DY
Abstract: si9950
Text: 'Siliconix SÌ9950DY in c o r p o r a te d Complementary MOSFET Half-Bridge SO P A C K A G E PRODUCT SUMMARY GND C L r r 2 rr 3 P-GATE C E 4 output output V BR DSS N- or P-Channel 50 r DS(ON) (n ) 0.30 •d (A) 2.0 16 ~ n GND 15 ~ n OUTPUT 1 14 ~ n OUTPUT
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9950DY
SI9950DY
si9950
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