2N4092
Abstract: No abstract text available
Text: 2N4092 N-CHANNEL J-FET Qualified Per MIL-PRF-19500/431 2.79 T. 1 of 1 Home Part Number: 2N4092 Online Store 2N4092 Diodes N- C HANNEL J - F ET Q ualified Per M IL- PRF - 1 9 5 0 0 / 4 3 1 Transistors
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2N4092
MIL-PRF-19500/431
com/2n4092
2N4092
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2N4093
Abstract: No abstract text available
Text: 2N4093 N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 8.59 Tr. 1 of 1 Home Part Number: 2N4093 Online Store 2N4093 Diodes N- C HANNEL J - F ET Q ualified per M IL- PRF -1 9 5 0 0 / 4 3 1 Transistors
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2N4093
MIL-PRF-19500/431
com/2n4093
2N4093
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Untitled
Abstract: No abstract text available
Text: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Tiva TM4C1292NCPDT Microcontroller D ATA SH E E T D S -T M 4C 1292 NCP DT - 1 5 6 3 8 . 2 7 11 S P M S 431 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated. Tiva and TivaWare are trademarks of Texas Instruments Incorporated. ARM and Thumb are
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TM4C1292NCPDT
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6MBP50RTA060
Abstract: 6mbp160rta060 6MBP80RTA060 fuji ipm 6MBP100RTA060 7MBP50RTA060 6mbp20RTA060 7MBP160RTA060 fuji 6mbp 7MBP80RTA060
Text: R-IPM3 and Econo IPM Series of Intelligent Power Modules Manabu Watanabe Yoshiyuki Kusunoki Naotaka Matsuda 1. Introduction Fuji Electric has developed and mass-produced several series of IGBT-IPMs insulated gate bipolar transistor-intelligent power modules , beginning with
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CIPS2002,
6MBP50RTA060
6mbp160rta060
6MBP80RTA060
fuji ipm
6MBP100RTA060
7MBP50RTA060
6mbp20RTA060
7MBP160RTA060
fuji 6mbp
7MBP80RTA060
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transistor 431 c
Abstract: 431 transistor transistor 431 a 431 transistor transistor 431t transistor 431 N transistor N 431 a n 431 transistor 431t transistor 431 a
Text: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity
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431DD
431/1203/Q1
ROP/1203/Q1
transistor 431 c
431 transistor
transistor 431
a 431 transistor
transistor 431t
transistor 431 N
transistor N 431 a
n 431 transistor
431t
transistor 431 a
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h a 431 transistor
Abstract: transistor 431t transistor w 431 431T 431T1 a/TRANSISTOR+431t
Text: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity
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431DD
ER116C
ER136C
RF180,
ER116C,
ER136C
RF100,
RF103,
ER114,
ER134,
h a 431 transistor
transistor 431t
transistor w 431
431T
431T1
a/TRANSISTOR+431t
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transistor 431t
Abstract: h a 431 transistor 431T transistor w 431 J412 lm 431 DAtasheet a 431 transistor TRANSISTOR 431 431D 431 transistor
Text: SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAYS ESTABLISHED RELIABILITY SENSITIVE SPDT SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression SPDT relay with internal diodes for coil transient suppression and polarity
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431DD
ER116C
ER136C
RF180,
ER116C,
ER136C
RF100,
RF103,
ER114,
ER134,
transistor 431t
h a 431 transistor
431T
transistor w 431
J412
lm 431 DAtasheet
a 431 transistor
TRANSISTOR 431
431D
431 transistor
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transistor 431t
Abstract: transistor AS 431 431T 431 transistor TRANSISTOR 431 a 431 transistor n 431 transistor k a 431 transistor transistor 431 c 431T-5
Text: TELEDYNE RELAYS SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAY SENSITIVE SPDT Actual Size SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression 431DD SPDT relay with internal diodes for coil transient suppression and polarity
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431DD
transistor 431t
transistor AS 431
431T
431 transistor
TRANSISTOR 431
a 431 transistor
n 431 transistor
k a 431 transistor
transistor 431 c
431T-5
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sd 431 transistor
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in
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bb53T31
PINNING-SOT186
BUK445-100A/B
BUK445
-100A
-100B
K445-100A/B
IE-02
1E-03
1E-04
sd 431 transistor
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100 amp npn darlington power transistors
Abstract: 10 amp npn darlington power transistors 10 amp npn power transistors SK9255 SK9139 15 amp npn darlington power transistors SK9229 SK9140 SK9234 SK9143
Text: TH On S O N / HÜ DISTRIBUTOR BIPOLAR TRANSISTORS SflE D • TQi?bö?3 OQauAÌT, 431 ■ TCSK com. Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application "complementary device type Device Power Dissipata Collector Current Continuous
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SK9139
SK9140
SK9141
SK9142
SK9143
SK9143
SK9142
SK9229
SK9234
T-043
100 amp npn darlington power transistors
10 amp npn darlington power transistors
10 amp npn power transistors
SK9255
15 amp npn darlington power transistors
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DIODE 433
Abstract: tl 431 R 433 A F433 IRFF430 IRFF431 IRFF432 IRFF433 AC15A
Text: SILICÔNIX INC IflE D "Silicon_ • ÔHS473S G ü m ô S Î 0 ■ IRFF430/431/432/433 incorporated Xf^ VTSiliconix ¡1 N-Channel Enhancement Mode Transistors TVZPi-D0! TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS "W> Id (A IRFF430 500 1.5 2.75
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IRFF430/4317432/433
IRFF430
IRFF431
IRFF432
IRFF433
O-205AF
T-39-Ã
DIODE 433
tl 431
R 433 A
F433
AC15A
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2N3442
Abstract: E271 2n4347
Text: File Number 528.1 HA RR IS S E M I C O N D S E CT OR SbE T> 2N3442, 2N4347 4 3 0 2 2 7 1 Q Q H G 431 2 TÔ * H A S • -p High-Voltage Silicon N-P-N Transistors -3 3 - ‘3 T E R M IN A L D E S IG N A TIO N S c High-Power Devices for Applications in Industrial and Commercial Equipment
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2N3442,
2N4347
2N4347)
2N3442)
2N3442
2N4347.
2N3442.
E271
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RF433
Abstract: 432r
Text: 3] HARRIS IRF430/431/432/433 IRF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 P a ckage Features T Q -2 0 4 A A • 4.0A and 4.5A, 450V - 500V • t S on) = 1-5 fl and 2.0C I DRAIN /(FLA N G E ) • Single Pulse Avalanche Energy Rated*
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IRF430/431/432/433
IRF430R/431R/432R/433R
IRF430,
IRF432,
F430R
RF433
432r
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LM431ACM3
Abstract: LM431AIM3 LM431BCM3 LM431BIM3 zener diode h49 LM43 431bc ic LM 356 LIA SOT23-3 lm 43
Text: & Semiconductor LM 431 A d ju s ta b le Precision Z e n e r S h u n t R e g u la to r Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range ot operation. The output voltage may be set at any
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LM431
LM431ACM3
LM431AIM3
LM431BCM3
LM431BIM3
zener diode h49
LM43
431bc
ic LM 356
LIA SOT23-3
lm 43
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Untitled
Abstract: No abstract text available
Text: • 4305271 0053^3 3Ì HARRIS TTE ■ HAS IR F430/431/432/433 IRF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 0 4 A A • 4.0A and 4.5A, 450V - 500V • rDS on = 1 -5 il and 2 .0 0 • Single Pulse Avalanche Energy Rated*
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F430/431/432/433
IRF430R/431R/432R/433R
IRF430,
IRF431,
IRF432,
IRF433
IRF430R,
IRF431R,
IRF432R
IRF433R
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2N6431
Abstract: 2N6432 2N6433 2N6430
Text: Datasheet Central 2N6430 2N6432 2 N 6 431 2N6433 NPN PN P Semiconductor Corp. C O M P L E M E N T A R Y SILICON T R A N S IS T O R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JE D E C T O -1 8 C A S E Manufacturers of W orld C la ss Discrete Sem iconductors
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2N6430
2N6431
2N6432
2N6433
2N6431
2N6430,
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transistor w 431
Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
Text: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW
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h a 431 transistor
Abstract: LH 431 IC 431 1N3913 431 transistors
Text: CÂ \X y . Series PTC 430, PTC 431 , V- /? % - High Voltage NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue APPLICATIONS • Switching Regulators
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Transistor PJ 431
Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB
Text: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 | Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue
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BO241C
Abstract: BO 241 A bo 135 transistor ESM 30 LF amplifier 2N2197 2N2196 bc 303 transistor ESM 304 100 bd 135
Text: N PN Power transistors « Epitaxial Base » L F amplifier and switching » Transistors de puissance « Base épitaxiée » Amplification et commutation B F Type Compì. Case Boîtier Ptot W VcEO (V) *C (A) *21 E max min / 'C 1 (A) Tease 25 0 C iiC V c E sa t
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TPu75
O-126
BD138
BO241C
BO 241 A
bo 135
transistor ESM 30
LF amplifier
2N2197
2N2196
bc 303 transistor
ESM 304 100
bd 135
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TFK u 116
Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
Text: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW
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Philips diode tFR
Abstract: BY328 BY-328
Text: SLE ]> PHILIPS INTERNATIONAL 711DÔ2b 0040441 bbT • PHIN BY328 SbE D T -O t ' 1 7 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television
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BY328
BY328
7Z77830
7Z77828
BY328.
Philips diode tFR
BY-328
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transistor c 6073
Abstract: TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b
Text: MICROSEMI CORP/POWER ÖSD D • bllSTSG 00003b2 2 NPN Darlington Transistors TO-2Q4MA TO ' 3 Part Number Ic Amps PTC 10002 PTC 10003 PTC 10006 PTC 10007 PTC 6251 PTC 6252 PTC 6253 PTC 6000 PTC 6001 PTC 6002 PTC 6003 PTC 10000 PTC 10001 PTC 10004 PTC 10005
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00003b2
TQ-204MA
PTC102
transistor c 6073
TRANSISTOR 431p
transistor c 6073 circuit diagram
ptc 820
TF PTC
PTC886
6063 T0
ptc 205
ptc 500
ptc b
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MGF4919
Abstract: mgf4918 mgf4914 MGF4910 gs 431 transistor
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series _ SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 9 1 0 E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to
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F4910E
F4914E
F4918E
F4919E
MGF4910E
GF4914E
GF4919E
MGF4919
mgf4918
mgf4914
MGF4910
gs 431 transistor
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