diode deg avalanche zo 150 63

Abstract: IRF432R IRF433R IRF430R IRF431R
Contextual Info: Rugged Power M O SFETs_ IRF430R, IRF431R, IRF432R, IRF433R File Num ber 1996 Avalanche Energy Rated N-Channel Power MOSFETs 4 .0 A an d 4.5A , 4 5 0 V -5 0 0 V ros on = 1 .5 0 an d 2 .0 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

IRF470

Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0

Contextual Info: • 4305271 0053^3 3Ì HARRIS TTE ■ HAS IR F430/431/432/433 IRF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 0 4 A A • 4.0A and 4.5A, 450V - 500V • rDS on = 1 -5 il and 2 .0 0 • Single Pulse Avalanche Energy Rated*

irf460 to-247

Abstract: IRF450R IRF331R IRF460 IRF840R IRF341R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462
Contextual Info: THOnSON/ DISTRIBUTOR Power MOSFETs SflE D • T02bñ73 0G0S711 bST ■ T C S K - _ _ Rugged-Series Power MOSFETs — N-Channel continued Package ft JP Maximum Ratinas BV d s S (V) ■d s (A) 'DS(O N) OHMS eAS (mj) 350

RF433

Abstract: 432r
Contextual Info: 3] HARRIS IRF430/431/432/433 IRF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 P a ckage Features T Q -2 0 4 A A • 4.0A and 4.5A, 450V - 500V • t S on) = 1-5 fl and 2.0C I DRAIN /(FLA N G E ) • Single Pulse Avalanche Energy Rated*