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    N CHANNEL FET TO92 Search Results

    N CHANNEL FET TO92 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL FET TO92 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFNL210B N-Channel B-FET 200 V, 1.0 A, 1.5 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,


    Original     		PDF IRFNL210B

    1N45B

    Abstract: No abstract text available
    Text: SSN1N45B N-Channel B-FET 450 V, 0.5 A, 4.25 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,


    Original     		PDF SSN1N45B 1N45B

    40822

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement


    Original     		PDF LND150 LND150 DSFP-LND150 B021110 40822

    LN1E

    Abstract: Marking code mps
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		PDF LND150 DSFP-LND150 A0912908 LN1E Marking code mps

    transistor marking code 12W SOT-23

    Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		PDF LND150 LND150 DSFP-LND150 A030609 transistor marking code 12W SOT-23 12w SOT 23 package marking code marking 12W SOT23 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150

    transistor marking code 12W SOT-23

    Abstract: 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		PDF LND150 DSFP-LND150 A012809 transistor marking code 12W SOT-23 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23

    LN1E

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		PDF LND150 DSFP-LND150 A10310808 LN1E

    Untitled

    Abstract: No abstract text available
    Text: 3VD223600NEYL 3VD223600NEYL N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE DESCRIPTION Ø 3VD223600NEYL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø ESD improved capability Ø


    Original     		PDF 3VD223600NEYL 3VD223600NEYL

    K596 b 01

    Abstract: K596
    Text: STK596M Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information


    Original     		PDF STK596M STK596M O-92M KST-I017-002 K596M K596 b 01 K596

    K596

    Abstract: K596 b 01 STK596M CAPACITOR MICROPHONE
    Text: STK596M Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information


    Original     		PDF STK596M O-92M KST-I017-001 K596 K596 b 01 STK596M CAPACITOR MICROPHONE

    ZVN0117TA

    Abstract: t50c
    Text: Not Recommended for New Design Please Use ZVNL120A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0117TA ISSUE 1 – APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    Original     		PDF ZVNL120A ZVN0117TA 100mA ZVN0117TA t50c

    2n5555 Vgs(off)

    Abstract: 2N5555 CS 150 10v
    Text: 2N5555 ♦I N-CHANNEL FET JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5555 type is an Silicon N Channel Junction FET designed for switching, RF amplifier and mixer applications where low capacitance is desired. MAXIMUM RA T I N G S Tfl=25°C unless otherwise noted


    OCR Scan     		PDF 2N5555 2n5555 Vgs(off) CS 150 10v

    2SK291

    Abstract: No abstract text available
    Text: HITACHI 2SK291-SILICON N-CHANNEL JUNCTION FET LOW FREQUENCY LOW NOISE AMPLIFIER n _ Î j_ !. IXuii 2 StHJTli 3 C*tc ia tr/n JEDEC TO-92) MAXIMUM CHANNEL POWER DISSIPATION CURVE • ABSOLUTE MAXIMUM RATINGS {T&=25#C) Tieni Symbol 2SK29I


    OCR Scan     		PDF 2SK291 2SK29I 2SK291

    Untitled

    Abstract: No abstract text available
    Text: bbSBTSl Q0175S3 4 N AMER PHILIPS/DISCRETE 55E D BSJ111 BSJ112 BSJ113 JV N-CHANNEL SILICO N FIELD -EFFECT T R A N SIST O R S Symmetrical silicon n-channel junction FET s in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.


    OCR Scan     		PDF Q0175S3 BSJ111 BSJ112 BSJ113 rBSJ113

    2N3819 junction fet

    Abstract: transistor 2N3819 2N3O19 2N3819 fet 2n3819 transistor VGD25 200UA 2N3819 VDS1
    Text: centrai 2N3 819 *1 Central Semiconductor Corp. central semiconductor Corp. N-CHANNEL SILICON JUNCTION FET JEDEC TO-92 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3819 type is a Silicon N-Channel Junction Field


    OCR Scan     		PDF 2N3819 200UA 2N3819 junction fet transistor 2N3819 2N3O19 2N3819 fet 2n3819 transistor VGD25 200UA 2N3819 VDS1

    Untitled

    Abstract: No abstract text available
    Text: calodlc High Speed DMOS N-Channel Switch CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).


    OCR Scan     		PDF SD403 SD403 19mmhos) M4322 -80jiSec

    SD403CY

    Abstract: SD403 SD403BD XSD403 high speed TTL in fet
    Text: calodlc High Speed DMOS N-Channel Switch CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).


    OCR Scan     		PDF SD403 SD403 19mmhos) M4322 80MSec M4322 SD403CY SD403BD XSD403 high speed TTL in fet

    transistor BF245

    Abstract: BF245 Fet BF245 transistor BF245 A UHF transistor FET
    Text: IsK U N-CHANNEL JUNCTION FET DESCRIPTION BF245 Effect is N-Channel Transistor TO-92 Junction Field designed for VHF/UHF amplifiers and mixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage VDG 30V Gate-Source Voltage VGS 30V Drain Current


    OCR Scan     		PDF BF245 300mW 200/xA 300/xS, transistor BF245 Fet BF245 transistor BF245 A UHF transistor FET

    BF245

    Abstract: transistor BF245 Fet BF245 BF245 TRANSISTOR FET TO-92
    Text: G U M O M te tr, DESCRIPTION BF245 is N-Channel Junction Effect Transistor designed VHF/UHF amplifiers and mixer. CRO BF245 N-CHANNEL JUNCTION FET TO-92 Field for GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage Gate-Source Voltage


    OCR Scan     		PDF BF245 BF245 300mW 300/xS, 200/xA transistor BF245 Fet BF245 BF245 TRANSISTOR FET TO-92

    transistor BF245

    Abstract: fet BF245 BF245 transistor BF245 A BF245 TRANSISTOR transistor gds "igss 5 na"
    Text: BF245 N-CHANNEL JUNCTION FET DESCRIPTION TO-92 BF245 is N-Channel Junction Field Effect Transistor designed for V HF/U H F amplifiers and m ixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage VDG 30V Gate-Source Voltage VGS 30V


    OCR Scan     		PDF BF245 300mW 300/xS, transistor BF245 fet BF245 transistor BF245 A BF245 TRANSISTOR transistor gds "igss 5 na"

    2SK168

    Abstract: VUME
    Text: HITACHI 2SK168-SILICON N-CHANNEL JUNCTION FET VHF AMPLIFIER. MIXER, LOCAL OSCILLATOR 1 I 1 _ 1 1 . 1 1 l _ } IVixn. in rrirn JEDEC TO-92) • ABSOLUTE MAXIMUM RATINGS (Ta-25*C) [tern Symbol MAXIMUM CHANNEL POWER DISSIPATION CURVE


    OCR Scan     		PDF 2SK168 Ta-23 2SKI68 -30FIGURE 2SK168 VUME

    Untitled

    Abstract: No abstract text available
    Text: 4ÔE D SD403 CAL06IC CORP 1044322 GGGG2S1 4 m C G C • calocft High Speed DMOS N-Channel Switch CORPORATION V ^P35- Z £ SD403 DESCRIPTION FEATURES • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance,


    OCR Scan     		PDF SD403 CAL06IC SD403 19mmhos) 35--as- O-226A

    2SK546

    Abstract: No abstract text available
    Text: Ordering number: EN 1790B N 0.179 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage


    OCR Scan     		PDF 1790B l790B 2SK546 -10UA SC-43 2SK546

    2SK546

    Abstract: No abstract text available
    Text: Ordering number: EN 1790B N 0 .I79 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage


    OCR Scan     		PDF 1790B l790B 2SK546 -10uA 2034/2034A SC-43 7tlt17D7b 2SK546