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    N CHANNEL MOSFET 300V 80A Search Results

    N CHANNEL MOSFET 300V 80A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL MOSFET 300V 80A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFK160N30T

    Abstract: No abstract text available
    Text: Advance Technical Information GigaMOSTM Power MOSFET VDSS ID25 IXFK160N30T IXFX160N30T = = 300V 160A Ω 19mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFK160N30T IXFX160N30T 200ns O-264 160N30T IXFK160N30T

    IXFK160N30T

    Abstract: IXFX160N30T PLUS247
    Text: Advance Technical Information IXFK160N30T IXFX160N30T GigaMOSTM Power MOSFET VDSS ID25 = = 300V 160A Ω 19mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFK160N30T IXFX160N30T 200ns O-264 160N30T IXFK160N30T IXFX160N30T PLUS247

    160N30T

    Abstract: 100A MOSFET ixys IXFN160N30T
    Text: Advance Technical Information IXFN160N30T GigaMOSTM Power MOSFET VDSS ID25 = = 300V 130A Ω 19mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFN160N30T 200ns OT-227 E153432 160N30T 160N30T 100A MOSFET ixys IXFN160N30T

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information MMIX1F160N30T GigaMOSTM TrenchTM HiperFETTM Power MOSFET VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 300V 102A Ω 20mΩ 200ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions


    Original     		PDF MMIX1F160N30T 200ns

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information GigaMOSTM TrenchTM HiperFETTM Power MOSFET MMIX1F160N30T VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 300V 102A Ω 20mΩ 200ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions


    Original     		PDF MMIX1F160N30T 200ns

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information GigaMOSTM Power MOSFET VDSS ID25 IXFN160N30T = = 300V 130A Ω 19mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFN160N30T 200ns OT-227 E153432 160N30T

    80N30W

    Abstract: AP80N30W
    Text: AP80N30W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ High Speed Switching BVDSS 300V RDS ON 66mΩ ID G 88A S Description AP80N30 from APEC provide the designer with the best combination of fast


    Original     		PDF AP80N30W AP80N30 O-220 80N30W 80N30W AP80N30W

    47N60S1

    Abstract: 47N60 n channel mosfet 300v 80a SCHEMATIC ups FMH47N60S1 FUJI DATE CODE IRP10 fuji electric lot code
    Text: / FMH47N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-3P 13 ± 0.2 4.5±0.2 Drain D UPS Server Telecom Power conditioner system Power supply 1.6


    Original     		PDF FMH47N60S1 47N60S1 47N60 n channel mosfet 300v 80a SCHEMATIC ups FMH47N60S1 FUJI DATE CODE IRP10 fuji electric lot code

    47N60S1

    Abstract: FMW47N60S1 FMW47N60S1HF n channel mosfet 300v 80a FMW-4
    Text: / FMW47N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg


    Original     		PDF FMW47N60S1HF O-247-P2 47N60S1 FMW47N60S1 FMW47N60S1HF n channel mosfet 300v 80a FMW-4

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    N-Channel Enhancemen-Mode MOSFET

    Abstract: NTE2386
    Text: NTE2386 MOSFET N–Channel Enhancemen Mode, High Speed Switch Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power


    Original     		PDF NTE2386 NTE2386 N-Channel Enhancemen-Mode MOSFET

    NTE2379

    Abstract: No abstract text available
    Text: NTE2379 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V


    Original     		PDF NTE2379 NTE2379

    half bridge converter 2kw

    Abstract: 5kw 20khz diagram induction heating 66a hall sensor TLE4209A XMC4700 ISO26262 1ED020112f TLE7183QU TLE5009 btm7752
    Text: Efficient Semiconductor Solutions for Motor Control and Drives www.infineon.com/motorcontrol Contents Solutions for Motor Control and Drives 04 Low-Voltage Applications 06 High-Voltage Applications 08 Product Families 10 Microcontrollers 10 Low-Voltage Products


    Original     		PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: CPS20.241-D1 24V, 20A, DC/DC CONVERTER C-Series DC/DC CONVERTER ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ 88-360Vdc Wide-range Input Width only 65mm Efficiency up to 94.6% ATEX and IECEx Approved Excellent Partial Load Efficiency 20% Output Power Reserves


    Original     		PDF CPS20 241-D1 88-360Vdc DS-CPS20 241-D1-EN 300Vdc,

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


    Original     		PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G

    hp laptop MOTHERBOARD pcb CIRCUIT diagram

    Abstract: ips 500w circuit diagram 800w class d circuit diagram schematics IRS2092 audio amplifier circuit diagram 700w audio amplifier circuit diagram schematic diagram Electronic Ballast xenon 2000w audio amplifier circuit diagram 1000w class d circuit diagram schematics IR2153 spice model circuit diagram of smps 400w DESKTOP
    Text: Product Line Overview Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that enable customers to add energyconserving features that achieve lower operating energy costs and manufacturing Bill of Material


    Original     		PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    relay finder 45.61

    Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
    Text: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 Safety10 A331-1-C2A7M A331-1-C2-A73 24Vdc 110Vac 240Vac A331-1-C2-A7D relay finder 45.61 reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415

    800w class d circuit diagram schematics

    Abstract: schematic diagram inverter 12v to 24v 1000w schematic diagram inverter 2000w SCHEMATIC WITH IR2153 1000w class d circuit diagram schematics 200w dc to ac inverter Circuit diagram AC to DC smps for plasma tv circuit diagram 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM schematic diagram AC to DC converter 800W IRF 9234
    Text: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 2 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.


    Original     		PDF

    8011

    Abstract: 003A D04A 2SK2827-01
    Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2827-01 SPEC. NO. F u ji E le c t r ic C o . , L t d . This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED 1/ 12 1 0257-R-004a I 1 .Scope This specifies Fuji Povrer MOSFET 2SK2827-01


    OCR Scan     		PDF 2SK2827-01 0257-R-004a 2SK2827-01 O-220 0257-R-003a 80jus 0257-R-003a 8011 003A D04A

    A2282

    Abstract: n channel mosfet 300v 80a
    Text: 2SK1939-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ - F A P - IIA • Features • • • • • • • S E R IE S I Outline Drawings High speed sw itching


    OCR Scan     		PDF 2SK1939-01 A2282 n channel mosfet 300v 80a

    2SK1939

    Abstract: 2SK1939-01 SC-65 T151 A2281
    Text: 2SK1939-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance 03,2±O.l 45*0-2 • No secondary breakdown • Low driving power • High voltage Gate • V GS-=t30V Guarantee


    OCR Scan     		PDF 2SK1939-01 SC-65 2SK1939 2SK1939-01 SC-65 T151 A2281