N CHANNEL MOSFET INSULATED Search Results

N CHANNEL MOSFET INSULATED Result Highlights (5)

Part	Manufacturer	Description
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS
TK090U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL

N CHANNEL MOSFET INSULATED Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BSS83 M74 Abstract: mosfet handbook PHILIPS MOSFET MARKING Mosfet n-channel BSS83 MDA251 MDA250 transistor DATA REFERENCE handbook MAM389 philips bss83 Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS83 MOSFET N-channel enhancement switching transistor Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor	Original	BSS83 OT143 BSS83 M74 mosfet handbook PHILIPS MOSFET MARKING Mosfet n-channel BSS83 MDA251 MDA250 transistor DATA REFERENCE handbook MAM389 philips bss83	PDF
depletion MOSFET Abstract: n channel depletion MOSFET depletion mode mosfet MOSFET HAndbook mosfet depletion depletion mode power mosfet BD 100 V n mosfet depletion note BSD22 Mosfet n-channel Text: DISCRETE SEMICONDUCTORS DATA SHEET BSD22 MOSFET N-channel depletion switching transistor Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification MOSFET N-channel depletion switching transistor	Original	BSD22 OT143 depletion MOSFET n channel depletion MOSFET depletion mode mosfet MOSFET HAndbook mosfet depletion depletion mode power mosfet BD 100 V n mosfet depletion note BSD22 Mosfet n-channel	PDF
95160 Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3 Text: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with	Original	TMF3201J OT363 TMF3201J OT363 95160 MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs Dual-Gate Mosfet 9935 mosfet 95160 3	PDF
Untitled Abstract: No abstract text available Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description SOT-363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It consists of two equal dual gate MOSFET amplifiers with shared	Original	TMF3201J OT-363 TMF3201J OT-363	PDF
1E14 Abstract: 2E12 OM130STC 51W diode Text: OM130STC RADIATION HARDENED POWER MOSFETS IN HERMETIC ISOLATED PACKAGE N-CHANNEL 100V, 10 Amp, N-Channel, Radiation Hardened Power MOSFET In A Hermetic Metal Package FEATURES • • • • • • Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package	Original	OM130STC 1000K 300msec, OM130S O-257AA 1E14 2E12 OM130STC 51W diode	PDF
MARKING CODE Zi sot363 Abstract: TMF3201J ZI Marking Code transistor MOSFET 9935 Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description The TMF3201J is an N-channel enhancement type, dual- SOT-363 insulated gate, field-effect transistor that utilizes MOS Unit in mm construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source	Original	TMF3201J TMF3201J OT-363 OT-363 KSD-A5S001-000 MARKING CODE Zi sot363 ZI Marking Code transistor MOSFET 9935	PDF
BSD20 Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion Text: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.	OCR Scan	bb53T31 BSD20 BSD22 OT-143 bb53131 7Z90790 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion	PDF
transistor BD 339 Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341 Text: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.	OCR Scan	00E374S BSD212 BSD215 BSD213 BSD215 BSD214 bb53031 transistor BD 339 transistor BD 341 BB530 -20/transistor BD 341	PDF
Untitled Abstract: No abstract text available Text: BSS83 _ _ Jv _ MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.	OCR Scan	BSS83 OT143	PDF
Untitled Abstract: No abstract text available Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	BSD12 7Z90791	PDF
BSD12 Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	BSD12 7Z907 a03ST0t. BSD12 depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor	PDF
Untitled Abstract: No abstract text available Text: 711002b QObTSTfl bS3 • P H I N BSS83 7V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.	OCR Scan	711002b BSS83 OT143	PDF
BSD215 Abstract: bsd214 BSD212 BSD213 transistor BD 341 Text: 711QöSb S1D IPHIN BSD212 to BSD215 MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. These transistors are hermetically sealed in a TO-72 envelope and feature a low ON-resistance, high	OCR Scan	BSD212 BSD215 BSD213 BSD215 BSD214 DDb7717 B5D212 transistor BD 341	PDF
Depletion MOSFET Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion Text: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	BSD12 Depletion MOSFET switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion	PDF

transistor d 1557 Abstract: BSS83 BR B6S M74 marking philips bss83 BSS83 M74 Text: • fc,b53em []D25fel2 bßS H A P X N AUER PHILIPS/DISCRETE BSS83 b?E D _ MOSFET N-CHANNEL ENHANCEMENT SW ITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SO T143 envelope and features a low ON resistance and low capacitances.	OCR Scan	D25fel2 BSS83 OT143 Z87623 7Z92669 transistor d 1557 BSS83 BR B6S M74 marking philips bss83 BSS83 M74	PDF
Untitled Abstract: No abstract text available Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.	OCR Scan	BSD22 OT-143	PDF
BSD10 Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V Text: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724'5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	G1724-S BSD10 BSD12 BSD10 T-35-25 7Z90790 -r90X depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V	PDF
DIODE 6AA Abstract: 1E14 2E12 OM130STC 51W diode Text: OM13QSTC RADIATION HARDENED POWER MOSFETS IN HERMETIC ISOLATED PACKAGE N-CHANNEL 100V, 10 Amp, N-Channel, Radiation Hardened Power MOSFET In A Hermetic Meta! Package FEATURES • • • • • • Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package	OCR Scan	OM13QSTC 1000K OM130S O-257AA 014fn 534-5776FAX 000124D DIODE 6AA 1E14 2E12 OM130STC 51W diode	PDF
transistor BD 430 Abstract: Depletion Text: _ II _ bbS3T31 O O I S ^ H 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - 3 S '- 2. S' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.	OCR Scan	bbS3T31 BSD20 BSD22 OT-143 transistor BD 430 Depletion	PDF
Untitled Abstract: No abstract text available Text: UNITRODE CORP iS 9347963 DE § ^ 3 4 7 ^ 3 GDlD7flb •=] U N I T R O D E CORP 92D 10786 POWER MOSFET TRANSISTORS D/-37-'*' UFN1130 700 Volt, 3.5 Ohm N-Channel FEATURES DESCRIPTION This new Unitrode power MOSFET utilizes the latest high voltage advanced technology	OCR Scan	D/-37-' UFN1130	PDF
Untitled Abstract: No abstract text available Text: — .1— N AUER PHILIPS/DISCRETE ^[,53^31 0D17S4'5 S • BSD10 BSD12 ESE D T - Z S -Z S - MOSFET N-CHANNEL DEPLETION SW ITCHING TRAN SISTO RS Symmetrical insulated-gate silicon M O S field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	0D17S4 BSD10 BSD12	PDF
ufn730 Abstract: UFN731 Text: UNITRODE CORP 9347963 M \| cî347cib3 DDlG7Sb UNITRODE CORP 92D 10756 POWER MOSFET TRANSISTORS UFN730 UFN731 UFN732 UFN733 400 Volt, 1.0 Ohm N-Channel FEATU R ES D E S C R IP T IO N • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.	OCR Scan	UFN730 UFN731 UFN732 UFN733	PDF
depletion MOSFET Abstract: BSD22 n mosfet depletion transistor MARKING CODE RJ Text: bb53^31 □QSSMM'Î ^05 HIAPX • N AUER PHILIPS/DISCRETE BSD22 b?E D J MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR S ym m etrical insulated-gate silicon MOS fre ld -e ffe ct tran sisto r o f the n-channel d e p le tio n m ode type. The tran sisto r is sealed in a SO T-143 envelope and features a lo w ON-resistance and lo w capacitances.	OCR Scan	BSD22 OT-143 7Z90790 depletion MOSFET BSD22 n mosfet depletion transistor MARKING CODE RJ	PDF
bsd214 Abstract: philips bsd215 BSD213 BSD215 BSD212 KT 117 diode t7e L7E transistor IEC134 Text: • titiS3T31 00E374S 15fl ■ N AUER P H I L I P S / D I S C R E T E APX BSD212 to BSD215 L7E D MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon M O S field-effect transistor of the N-channel enhancement mode type. These transistors are herm etically sealed in a TO-72 envelope and feature a low ON-resistance, high	OCR Scan	titiS3T31 00E374S BSD212 BSD215 BSD213 BSD215 BSD214 philips bsd215 KT 117 diode t7e L7E transistor IEC134	PDF

N CHANNEL MOSFET INSULATED Search Results

N CHANNEL MOSFET INSULATED Result Highlights (5)

N CHANNEL MOSFET INSULATED Datasheets Context Search

BSS83 M74

depletion MOSFET

95160

Untitled

1E14

MARKING CODE Zi sot363

BSD20

transistor BD 339

Untitled

Untitled

BSD12

Untitled

BSD215

Depletion MOSFET

transistor d 1557

Untitled

BSD10

DIODE 6AA

transistor BD 430

Untitled

Untitled

ufn730

depletion MOSFET

bsd214