E250NS10
Abstract: JESD97 STE250NS10 isotop mosfet 100V
Text: STE250NS10 N-channel 100V - 0.0045Ω - 220A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE250NS10 100V <0.0055Ω 220A • Standard threshold drive ■ 100% avalanche tested Description ISOTOP This Power MOSFET is the latest development of
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STE250NS10
E250NS10
E250NS10
JESD97
STE250NS10
isotop mosfet 100V
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N mosfet 100v 200A
Abstract: FQA90N10V2 100V N-Channel MOSFET
Text: QFET FQA90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)
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FQA90N10V2
FQA90N10V2
N mosfet 100v 200A
100V N-Channel MOSFET
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N mosfet 100v 200A
Abstract: 100V N-channel mosfet FQH90N10V2
Text: QFET FQH90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)
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FQH90N10V2
FQH90N10V2
N mosfet 100v 200A
100V N-channel mosfet
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Untitled
Abstract: No abstract text available
Text: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially
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FDP047N10
FDP047N10
O-220
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Untitled
Abstract: No abstract text available
Text: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially
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FDP047N10
O-220
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Untitled
Abstract: No abstract text available
Text: FDB047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially
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FDB047N10
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTA10R220H Power MOSFET 7A, 100V N-CHANNEL FAST SWITCHING MOSFET DESCRIPTION The UTC UTA10R220H is an N-Channel fast switching MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance and low gate charge, etc.
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UTA10R220H
UTA10R220H
UTA10R220HG-S08-R
QW-R209-073
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FDP047N10
Abstract: No abstract text available
Text: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially
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FDP047N10
O-220
FDP047N10
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MOSFET 50V 100A TO-220
Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
Text: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been
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FDP045N10A
FDI045N10A
MOSFET 50V 100A TO-220
MOSFET 50V 100A
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Untitled
Abstract: No abstract text available
Text: FDD1600N10ALZ N-Channel PowerTrench MOSFET 100V, 6.8A, 160mΩ Features Description • RDS on = 124mΩ ( Typ.)@ VGS = 10V, ID = 3.5A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advance PowerTrench process that has been especially
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FDD1600N10ALZ
FDD1600N10ALZ
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Untitled
Abstract: No abstract text available
Text: FDP047N10 N-Channel PowerTrench tm MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially
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FDP047N10
FDP047N10
O-220
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FDP047N10
Abstract: No abstract text available
Text: FDP047N10 N-Channel PowerTrench tm MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially
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FDP047N10
O-220
FDP047N10
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FDB047N10
Abstract: single HIGH SPEED POWER MOSFET
Text: FDB047N10 N-Channel PowerTrench tm MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially
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FDB047N10
FDB047N10
single HIGH SPEED POWER MOSFET
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Mosfet
Abstract: SSF1006A
Text: SSF1006A 100V N-Channel MOSFET FEATURES ID =200A Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product BV=100V RDS ON =4.7mΩ(Typ.) DESCRIPTION The SSF1006A is a new generation of high voltage and low
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SSF1006A
SSF1006A
Mosfet
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Power MOSFET SOT-223
Abstract: st MARKING E4 JESD97 N2NE10L STN2NE10L
Text: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive
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STN2NE10L
OT-223
Power MOSFET SOT-223
st MARKING E4
JESD97
N2NE10L
STN2NE10L
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STQ1NE10L-AP
Abstract: q1ne10l Q1NE10
Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive
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STQ1NE10L
STQ1NE10L
STQ1NE10L-AP
q1ne10l
Q1NE10
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JESD97
Abstract: N2NE10L STN2NE10L
Text: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive
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STN2NE10L
OT-223
JESD97
N2NE10L
STN2NE10L
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Q1NE10L
Abstract: JESD97 STQ1NE10L STQ1NE10L-AP d400S Q1NE10
Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive
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STQ1NE10L
Q1NE10L
JESD97
STQ1NE10L
STQ1NE10L-AP
d400S
Q1NE10
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irf 100v 200A
Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U smd transistor 0081
Text: PD - 91547C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN150 JANTX2N7224U JANTXV2N7224U REF:MIL-PRF-19500/592 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN150 0.07 Ω 34A HEXFET® MOSFET technology is the key to International
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91547C
IRFN150
JANTX2N7224U
JANTXV2N7224U
MIL-PRF-19500/592
irf 100v 200A
IRFN150
JANTX2N7224U
JANTXV2N7224U
smd transistor 0081
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Untitled
Abstract: No abstract text available
Text: PD - 91547C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN150 JANTX2N7224U JANTXV2N7224U REF:MIL-PRF-19500/592 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN150 0.07 Ω 34A HEXFET® MOSFET technology is the key to International
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91547C
IRFN150
JANTX2N7224U
JANTXV2N7224U
MIL-PRF-19500/592
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stq1ne10l
Abstract: Q1NE10L stq1ne10l-ap
Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged tecnology ■ Low threshold drive TO-92
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STQ1NE10L
STQ1NE10L
STQ1NE10L-AP
Q1NE10L
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STY140NS10
Abstract: No abstract text available
Text: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™
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STY140NS10
MAX247â
STY140NS10
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STY140NS10
Abstract: Max247TM MAX247
Text: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™
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STY140NS10
MAX247TM
STY140NS10
Max247TM
MAX247
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FQP90N10
Abstract: No abstract text available
Text: KSM90N10V2/KSMF90N10V2 100V N-Channel MOSFET • • • • • • TO-220F TO-220 Features 90 A, 100V, RDS on = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSM90N10V2/KSMF90N10V2
O-220F
O-220
54TYP
00x45Â
FQP90N10
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