P140NF75
Abstract: STP140NF75 STB140NF75T4 B140NF75 STB140NF75 STB140NF75-1 p140nf
Text: STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB140NF75 75V <0.0075Ω 120A(1) STB140NF75-1 75V <0.0075Ω 120A(1) STP140NF75 75V <0.0075Ω 120A(1)
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STP140NF75
STB140NF75
STB140NF75-1
D2PAK/I2/TO-220
STB140NF75
O-220
P140NF75
STP140NF75
STB140NF75T4
B140NF75
STB140NF75-1
p140nf
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Untitled
Abstract: No abstract text available
Text: STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB140NF75 75V <0.0075Ω 120A(1) STB140NF75-1 75V <0.0075Ω 120A(1) STP140NF75 75V <0.0075Ω 120A(1)
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STP140NF75
STB140NF75
STB140NF75-1
D2PAK/I2/TO-220
STB140NF75
O-220
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p140nf
Abstract: p140n P140NF75
Text: STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB140NF75 75V <0.0075Ω 120A(1) STB140NF75-1 75V <0.0075Ω 120A(1) STP140NF75 75V <0.0075Ω 120A(1)
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STP140NF75
STB140NF75
STB140NF75-1
D2PAK/I2/TO-220
STB140NF75-1
O-220
p140nf
p140n
P140NF75
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Untitled
Abstract: No abstract text available
Text: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK STripFET Power MOSFET Features Type VDSS RDS on (max.) ID STB160N75F3 75V 3.7 mΩ 120 A(1) 1 STP160N75F3 75V 4 mΩ 120 A(1) STW160N75F3 75V 4 mΩ 120 A(1)
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STB160N75F3
STP160N75F3
STW160N75F3
O-220
O-247
STP160N75F3
O-220
O-247
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STW160N75F3
Abstract: STP160N75F3 160N75F3 JESD97 STB160N75F3 VDD-375
Text: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK STripFET Power MOSFET Features Type VDSS RDS on (max.) ID STB160N75F3 75V 3.7 mΩ 120 A(1) 3 1 STP160N75F3 75V 4 mΩ 120 A(1) STW160N75F3 75V 4 mΩ 120 A(1)
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STB160N75F3
STP160N75F3
STW160N75F3
O-220
O-247
STP160N75F3
O-220
O-247
STW160N75F3
160N75F3
JESD97
STB160N75F3
VDD-375
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Untitled
Abstract: No abstract text available
Text: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3
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STB160N75F3
STP160N75F3
STW160N75F3
O-220
O-247
STP160N75F3
O-220
O-247
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160N75F3
Abstract: STP160N75F3 JESD97 STB160N75F3 STW160N75F3 m 0409 STP160
Text: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3
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STB160N75F3
STP160N75F3
STW160N75F3
O-220
O-247
STP160N75F3
O-220
O-247
160N75F3
JESD97
STB160N75F3
STW160N75F3
m 0409
STP160
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Untitled
Abstract: No abstract text available
Text: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3
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STB160N75F3
STP160N75F3
STW160N75F3
O-220
O-247
STW160N75F3
O-220
O-247
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75N75H
Abstract: 75N75 PD137 C712E3
Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN75N75HE3 BVDSS RDSON ID Spec. No. : C712E3 Issued Date : 2009.05.13 Revised Date : Page No. : 1/6 75V 11 mΩ 80A Description The MTN75N75HE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
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MTN75N75HE3
C712E3
MTN75N75HE3
O-220
UL94V-0
75N75H
75N75
PD137
C712E3
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1820 BMS4007 N-Channel Power MOSFET http://onsemi.com 75V, 60A, 7.8mΩ, TO-220ML LS Features • • • ON-resistance RDS(on)=6mΩ (typ.) Input capacitance Ciss=9700pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1820
BMS4007
O-220ML
9700pF
PW10s,
L100H,
A1820-5/5
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IXFZ520N075T2
Abstract: No abstract text available
Text: Advance Technical Information IXFZ520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings
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IXFZ520N075T2
DE475
IXFZ520N075T2
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXFK520N075T2 IXFX520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFETs VDSS ID25 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS
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IXFK520N075T2
IXFX520N075T2
O-264
520N075T2
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140tr
Abstract: No abstract text available
Text: Preliminary Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F520N075T2
IXFZ520N075T2
140tr
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFK520N075T2 IXFX520N075T2 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings
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IXFK520N075T2
IXFX520N075T2
O-264
520N075T2
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MMIX1F520N075T2
Abstract: IXFZ520N075T2 ixfz520n075
Text: Advance Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F520N075T2
IXFZ520N075T2
MMIX1F520N075T2
IXFZ520N075T2
ixfz520n075
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET MMIX1F520N075T2 VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F520N075T2
IXFZ520N075T2
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFN520N075T2 = = 75V 480A Ω 1.9mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings
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IXFN520N075T2
OT-227
E153432
520N075T2
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFZ520N075T2 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode D D D G Symbol Test Conditions
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IXFZ520N075T2
DE475
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Untitled
Abstract: No abstract text available
Text: AP95T07GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower On-resistance Fast Switching Characteristic RoHS Compliant & Halogen-Free ID G 75V 5m 80A S Description
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AP95T07GP-HF
O-220
100us
100ms
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n-channel, 75v, 80a
Abstract: marking codes transistors SSs ssm95t07gp
Text: SSM95T07GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant BVDSS 75V RDS ON 5mΩ 80A ID G S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp.
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SSM95T07GP
O-220
n-channel, 75v, 80a
marking codes transistors SSs
ssm95t07gp
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IXTP170N075T2
Abstract: ixtp170n075 T170N IXTA170N075T2 170N075T2
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA170N075T2 IXTP170N075T2 VDSS ID25 = 75V = 170A Ω ≤ 5.4mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75
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IXTA170N075T2
IXTP170N075T2
O-263
O-220
170N075T2
IXTP170N075T2
ixtp170n075
T170N
IXTA170N075T2
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IXTP230N075T2
Abstract: 230N075T2 IXTA230N075T2 IXTP230 ixta230n TF230
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA230N075T2 IXTP230N075T2 VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75
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IXTA230N075T2
IXTP230N075T2
O-263
230N075T2
IXTP230N075T2
IXTA230N075T2
IXTP230
ixta230n
TF230
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA120N075T2 IXTP120N075T2 VDSS ID25 = 75V = 120A Ω ≤ 7.7mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75
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IXTA120N075T2
IXTP120N075T2
O-263
120N075T2
0-29-08-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA230N075T2 IXTP230N075T2 VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75
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IXTA230N075T2
IXTP230N075T2
O-263
230N075T2
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