Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially
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APQ5ESN40AH
APQ5ESN40AF
00V/5
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially
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APQ5ESN40AH
APQ5ESN40AF
00V/5
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mosfet 400V
Abstract: No abstract text available
Text: DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially
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APQ5ESN40AH
APQ5ESN40AF
00V/5
mosfet 400V
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Apq50sn06
Abstract: APQ50SN06AH apQ50SN06A
Text: DEVICE SPECIFICATION APQ50SN06AH 60V/50A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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APQ50SN06AH
0V/50A
APQ50SN06AH-XXM0
Apq50sn06
APQ50SN06AH
apQ50SN06A
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APQ03SN80AB
Abstract: MOSFET 800V 3A 800VVGS
Text: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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APQ03SN80AB
00V/3A
APQ03SN80AB-XXM0
APQ03SN80AB
MOSFET 800V 3A
800VVGS
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APQ57SN10BH
Abstract: No abstract text available
Text: DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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APQ57SN10BH
00V/57A
APQ57SN10BH-XXM0
APQ57SN10BH
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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APQ03SN80AB
00V/3A
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ltbd
Abstract: No abstract text available
Text: DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET 2 Features 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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APQ57SN10BH
00V/57A
ltbd
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tr/54/APQ02SN60AH-XXM0
Abstract: No abstract text available
Text: DEVICE SPECIFICATION APQ02SN60AH APQ02SN60AF 600V/2A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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APQ02SN60AH
APQ02SN60AF
00V/2A
tr/54/APQ02SN60AH-XXM0
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521 MOSFET
Abstract: MOSFET 546
Text: DEVICE SPECIFICATION APQ16SN06AA APQ16SN06AB 60V/16A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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APQ16SN06AA
APQ16SN06AB
0V/16A
521 MOSFET
MOSFET 546
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K 2915 MOSFET
Abstract: APQ02SN60AF SWITCHING DIODE 600V 2A MOSFET 40A 600V APQ02SN60AH 600V 2A MOSFET N-channel mosfet 600V 100A Mosfet 600V, 2A MOSFET 600V 2A
Text: DEVICE SPECIFICATION APQ02SN60AH APQ02SN60AF 600V/2A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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APQ02SN60AH
APQ02SN60AF
00V/2A
APQ02se
K 2915 MOSFET
APQ02SN60AF
SWITCHING DIODE 600V 2A
MOSFET 40A 600V
600V 2A MOSFET N-channel
mosfet 600V 100A
Mosfet 600V, 2A
MOSFET 600V 2A
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APQ08SN50BF
Abstract: No abstract text available
Text: DEVICE SPECIFICATION APQ08SN50BH APQ08SN50BF 500V/8A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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APQ08SN50BH
APQ08SN50BF
00V/8A
APQ08SN50BF
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION APQ16SN06AA APQ16SN06AB 60V/16A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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APQ16SN06AA
APQ16SN06AB
0V/16A
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75333p
Abstract: MOSfet 4362 HUF75333G3 HUF75333P3 HUF75333S3 HUF75333S3S HUF75333S3ST TA75333
Text: HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S S E M I C O N D U C T O R 56A, 55V, 0.016 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 56A, 55V The HUF75333 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced
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HUF75333G3,
HUF75333P3,
HUF75333S3,
HUF75333S3S
HUF75333
1-800-4-HARRIS
75333p
MOSfet 4362
HUF75333G3
HUF75333P3
HUF75333S3
HUF75333S3S
HUF75333S3ST
TA75333
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Untitled
Abstract: No abstract text available
Text: HUFA75343G3, HUFA75343P3, HUFA75343S3S TM Data Sheet November 2000 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUFA75343G3,
HUFA75343P3,
HUFA75343S3S
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75343p
Abstract: fairchild to-220ab 75343P TA75343 75343 75343G 75343S HUFA75343G3 HUFA75343P3 HUFA75343S3S HUFA75343S3ST
Text: HUFA75343G3, HUFA75343P3, HUFA75343S3S Data Sheet November 2000 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUFA75343G3,
HUFA75343P3,
HUFA75343S3S
75343p
fairchild to-220ab 75343P
TA75343
75343
75343G
75343S
HUFA75343G3
HUFA75343P3
HUFA75343S3S
HUFA75343S3ST
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75343p
Abstract: 75343G fairchild to-220ab 75343P HUF75343G3 75343 HUF75343p3 75343S HUF75343S3S HUF75343S3ST TA75343
Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75343G3,
HUF75343P3,
HUF75343S3S
75343p
75343G
fairchild to-220ab 75343P
HUF75343G3
75343
HUF75343p3
75343S
HUF75343S3S
HUF75343S3ST
TA75343
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION APQ08SN50BH APQ08SN50BF 500V/8A N-Channel MOSFET 2 Features 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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APQ08SN50BH
APQ08SN50BF
00V/8A
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fairchild to-220ab 75343P
Abstract: 75343p 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334
Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75343G3,
HUF75343P3,
HUF75343S3S
fairchild to-220ab 75343P
75343p
75343G
75343S
HUF75343G3
HUF75343P3
HUF75343S3S
HUF75343S3ST
TA75343
TB334
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Untitled
Abstract: No abstract text available
Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on| < 0.075 Q, VGS = 10 V, ID = 4 A P-channel: RDS(im < 0.! 2 O, V GS = - 1 0 V, ID = - 4 A • Capable o f 4 V gate drive
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4AM12
2SJ173
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2SK series
Abstract: 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
Text: Index N-Channel 2SK Series 2SK213. 153 2SK214. 153
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2SK213.
2SK214.
2SK215.
2SK216.
2SK410.
SK2958CS)
SK2959.
2SK2980.
2SK series
2SK1637
2SK2097
2SK2203
1018 636
transistor+2sk
2SK+series
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Untitled
Abstract: No abstract text available
Text: HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S S em iconductor Novem ber 1998 Data Sheet 56A, 55V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETs The HUF75333 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology
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HUF75333G3,
HUF75333P3,
HUF75333S3,
HUF75333S3S
HUF75333
O-263AB
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7803 3V
Abstract: 2SK575 nf 749
Text: SONY GaAs N-channel MES FET a D e scrip tio n : The 2SK575 is a low noise N-channel GaAs FET having a 0.5 micron gate length designed for amplifiers up to the Kuband. Hermetic sealed ceramic packaging has been adopted to ensure high reliability. Superior characteristics can be
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2SK575
12GHz
7803 3V
nf 749
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75343p
Abstract: 75343 75343G 02-E4 TA75343 91E2 27e5 HUF75343P
Text: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor June 1999 Data Sheet 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75343G3,
HUF75343P3,
HUF75343S3S
85e-2
76e-3
35e-3
64e-2
48e-1
23e-1
96e-2
75343p
75343
75343G
02-E4
TA75343
91E2
27e5
HUF75343P
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