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    N-CHANNEL DEPLETION MODE FIELD EFFECT TRANSISTOR Search Results

    N-CHANNEL DEPLETION MODE FIELD EFFECT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL DEPLETION MODE FIELD EFFECT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2n5457 pin out

    Abstract: 2N5457 2N5458 2N5457 datasheet 2N5458 equivalent TA 5458 semiconductor 2n5457
    Text: 2N5457, 2N5458 Preferred Device JFETs − General Purpose N- Channel - Depletion N-Channel Junction Field Effect Transistors, depletion mode Type A designed for audio and switching applications. • • • • • • • http://onsemi.com N-Channel for Higher Gain


    Original     		2N5457, 2N5458 2N5457/D 2n5457 pin out 2N5457 2N5458 2N5457 datasheet 2N5458 equivalent TA 5458 semiconductor 2n5457 PDF

    FET 4900

    Abstract: CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602C CPC5602CTR CPC5604A CPC5610A CPC5611A
    Text: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage


    Original     		CPC5602C CPC5602C OT-223 DS-CPC5602C-Rev. FET 4900 CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602CTR CPC5604A CPC5610A CPC5611A PDF

    sot transistor pinout

    Abstract: n channel depletion MOSFET 351 SOT223 CPC5602C
    Text: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage


    Original     		CPC5602C OT-223 CPC5602C DS-CPC5602C-R1 sot transistor pinout n channel depletion MOSFET 351 SOT223 PDF

    FET SOT-89 N-Channel

    Abstract: CPC3710C ignition module sot89 fet
    Text: CPC3710C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS ON (max) 10Ω IDSS (min) Package 220mA SOT-89 Description The CPC3710C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		CPC3710C 220mA OT-89 CPC3710C DS-CPC3710C-R00A FET SOT-89 N-Channel ignition module sot89 fet PDF

    RY115

    Abstract: CPC3714C R00a D 4242 transistor
    Text: CPC3714C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 14Ω IDSS (min) Package 240mA SOT-89 Description The CPC3714C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		CPC3714C 240mA OT-89 CPC3714C DS-CPC3714C-R00A RY115 R00a D 4242 transistor PDF

    FET SOT-89 N-Channel

    Abstract: D 4242 transistor CPC3720C FET SOT-89
    Text: CPC3720C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 22Ω IDSS (min) Package 130mA SOT-89 Description The CPC3720C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		CPC3720C 130mA OT-89 CPC3720C DS-CPC3720C-R00A FET SOT-89 N-Channel D 4242 transistor FET SOT-89 PDF

    depletion mode fet

    Abstract: CPC3730C MOSFET 350V SOT-89
    Text: CPC3730C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 30Ω IDSS (min) Package 140mA SOT-89 Description The CPC3730C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		CPC3730C 140mA OT-89 CPC3730C DS-CPC3730C-R00B depletion mode fet MOSFET 350V SOT-89 PDF

    2N5640

    Abstract: 2N5640 MOTOROLA 2N5638 2N5639 2N5639 MOTOROLA motorola 2N5639
    Text: 2N5638 2N5639 2N5640 ● I N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS . . . depletion mode Type A Junction Field-Effect designed for chopper and high-speed switching @ Low Drain-Source “ON” rds(o”) = Resistance Transistors applications. — 30 Ohms (2 N5638)


    Original     		2N5638 2N5639 2N5640 N5638) N5639) N5640) 2N5640 2N5640 MOTOROLA 2N5638 2N5639 2N5639 MOTOROLA motorola 2N5639 PDF

    N-Channel JFET FETs

    Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
    Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are


    Original     		O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17 PDF

    P-Channel Depletion Mosfets

    Abstract: mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484
    Text: MOSFETs Single Gate FIELD-EFFECT TRANSISTORS continued P-CHANNEL Enhancement MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel,


    OCR Scan     		2N5486 2N4416 2N4416A 2N5245 3N128* P-Channel Depletion Mosfets mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484 PDF

    BSD20

    Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion
    Text: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.


    OCR Scan     		bb53T31 BSD20 BSD22 OT-143 bb53131 7Z90790 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion PDF

    MMT3823

    Abstract: micro-T Package
    Text: MMT3823 silicon MICRO-MINIATURE JUNCTION FIELD-EFFECT TRANSISTOR MICRO-T SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR SYM M E TR IC A L SILICON N-CHANNEL Depletion Mode (Type A ) Fieid-Effect Transistor designed for RF amplifier and mixer applications where high density packaging is


    OCR Scan     		MMT3823 100-MHz MMT3823 micro-T Package PDF

    Untitled

    Abstract: No abstract text available
    Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		BSD12 7Z90791 PDF

    BSD12

    Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
    Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		BSD12 7Z907 a03ST0t. BSD12 depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor PDF

    MPF4391

    Abstract: MPF4392 4392 a ic moox MPF4393 MPF 120 MPF-4391
    Text: MPF4391, MPF4392, MPF4393 SILICON SILICON N-CHANNEL JUNCTION FIELD—EFFECT TRANSISTORS N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion Mode (T yp e A ) Junction F ield -E ffect Transistors designed for chopper and high-speed switching applications.


    OCR Scan     		MPF4391, MPF4392, MPF4393 MPF4391 MPF4392 MPF4391 MPF4392 4392 a ic moox MPF4393 MPF 120 MPF-4391 PDF

    yn 1018

    Abstract: MPF820 RS-50S Scans-00100834
    Text: MPF820 silicon Advance Inform ation JUNCTION FIELD-EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION FIELD-EIFFECT TRANSISTOR SILIC O N N -CHANNEL . . . depletion mode jun ctio n fie ld -e ffect transistor designed fo r low noise grounded gate RF a m plifier applications.


    OCR Scan     		MPF820 RS-50S! 330pF yn 1018 MPF820 RS-50S Scans-00100834 PDF

    motorola 304

    Abstract: MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075
    Text: Order this document by MRFG9801/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9801 MRFG9801R Advance Information The RF Line N-Channel Dual-Gate G a A s Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion mode dual-gate MES FET designed for high frequency amplifier


    OCR Scan     		MRFG9801/D MRFG9801/9801R MRFG9801/D motorola 304 MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075 PDF

    u175

    Abstract: MPF112
    Text: MPF 112 SILICON SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Depletion Mode (Type A ) device designed fo r V H F am plifier and mixer applications. • Low Cross-Modulation Distortion • Low Transfer Capacitance - C rss = 3.0 pF (Typ) @ V q $ = 10 Vdc


    OCR Scan     		MPF112 u175 MPF112 PDF

    MFE824

    Abstract: Field-Effect Transistors 10mmho
    Text: MFE824 silicon SILICON N-CHANNEL N-CHANNEL MOS FIELD-EFFECT TRANSISTORS MOS FIELD-EFFECT TRANSISTORS Depletion-Enhancem ent Mode. (Type B) M O S Field-E ffect Tran­ sistors designed fo r use in smoke detector circuits. • Low Gate Reverse Current — *GSS " 1-0 pA dc (M ax) @ V q s = 10 Vdc


    OCR Scan     		MFE824 MFE824 Field-Effect Transistors 10mmho PDF

    Depletion MOSFET

    Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion
    Text: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		BSD12 Depletion MOSFET switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion PDF

    MPF109

    Abstract: color codes TRANSISTOR
    Text: MPF109 SILICON SILIC O N N-CHANNEL JUNCTION FIELD-EFFECT T R AN SIST O R JUNCTION FIELD-EFFECT TRAN SISTO R Depletion mode transistor designed for general-purpose audio and switching applications. SY M M E T R IC A L SILICO N N-CHANNEL • Devices are Classified and Identified in 2:1 Zero-Gate Voltage


    OCR Scan     		MPF109 MPF109 color codes TRANSISTOR PDF

    MPF108

    Abstract: No abstract text available
    Text: MPF108 SILICON JUNCTION FIELD-EFFECT TRAN SISTO R SILICO N N-CHANNEL JUNCTION FIELD-EFFECT T R A N SIST O R SY M M E T R IC A L SILICO N N-CHANNEL Depletion mode (Type A) transistor designed for V H F amplifier and mixer applications. Type A • Devices are Classified and Identified in 2:1 IQ SS Ranges


    OCR Scan     		MPF108 MPF108 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		BSD22 OT-143 PDF

    BSD10

    Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V
    Text: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724'5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		G1724-S BSD10 BSD12 BSD10 T-35-25 7Z90790 -r90X depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V PDF