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    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Search Results

    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NDH853N

    Abstract: No abstract text available
    Text: N August 1996 PRELIMINARY NDH853N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    Original
    NDH853N NDH853N PDF

    508B C

    Abstract: ndp508 NDP508BE NDB508A NDB508AE NDB508B NDB508BE NDP508A NDP508AE NDP508B
    Text: N May 1994 NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


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    NDP508A NDP508AE NDP508B NDP508BE NDB508A NDB508AE NDB508B NDB508BE NDP508 508B C NDP508BE NDB508BE PDF

    NDB610A

    Abstract: NDB610AE NDB610B NDB610BE NDP610A NDP610AE NDP610B NDP610BE DON60 MJ-26
    Text: N May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


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    NDP610A NDP610AE NDP610B NDP610BE NDB610A NDB610AE NDB610B NDB610BE NDP610 NDB610BE NDP610BE DON60 MJ-26 PDF

    GS 069 pwm

    Abstract: gs 069 710b NDB710A NDB710AE NDB710B NDB710BE NDP710A NDP710AE NDP710B
    Text: N May 1994 NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


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    NDP710A NDP710AE NDP710B NDP710BE NDB710A NDB710AE NDB710B NDB710BE NDP710 GS 069 pwm gs 069 710b NDB710BE PDF

    NDB608A

    Abstract: NDB608AE NDB608B NDB608BE NDP608A NDP608AE NDP608B NDP608BE
    Text: N May 1994 NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


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    NDP608A NDP608AE NDP608B NDP608BE NDB608A NDB608AE NDB608B NDB608BE NDP608 NDB608BE NDP608BE PDF

    NDB510A

    Abstract: NDB510AE NDB510B NDB510BE NDP510A NDP510AE NDP510B NDP510BE
    Text: N May 1994 NDP510A / NDP510AE / NDP510B / NDP510BE NDB510A / NDB510AE / NDB510B / NDB510BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


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    NDP510A NDP510AE NDP510B NDP510BE NDB510A NDB510AE NDB510B NDB510BE NDP510 NDB510BE NDP510BE PDF

    NDB410A

    Abstract: NDB410AE NDB410B NDB410BE NDP410A NDP410AE NDP410B NDP410BE
    Text: N May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


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    NDP410A NDP410AE NDP410B NDP410BE NDB410A NDB410AE NDB410B NDB410BE NDP410 NDB410BE NDP410BE PDF

    408B

    Abstract: NDB408A NDB408AE NDB408B NDB408BE NDP408 NDP408A NDP408AE NDP408B NDP408BE
    Text: N May 1994 NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


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    NDP408A NDP408AE NDP408B NDP408BE NDB408A NDB408AE NDB408B NDB408BE NDP408 408B NDB408BE NDP408BE PDF

    NDB708A

    Abstract: NDB708AE NDB708B NDB708BE NDP708A NDP708AE NDP708B NDP708BE
    Text: N May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


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    NDP708A NDP708AE NDP708B NDP708BE NDB708A NDB708AE NDB708B NDB708BE NDP708 NDB708BE NDP708BE PDF

    NDB510A

    Abstract: NDB510AE NDB510B NDB510BE NDP510A NDP510AE NDP510B NDP510BE
    Text: May 1994 NDP510A / NDP510AE / NDP510B / NDP510BE NDB510A / NDB510AE / NDB510B / NDB510BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's


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    NDP510A NDP510AE NDP510B NDP510BE NDB510A NDB510AE NDB510B NDB510BE NDP510 NDB510BE NDP510BE PDF

    NDP508BE

    Abstract: NDB508A NDB508AE NDB508B NDB508BE NDP508 NDP508A NDP508AE NDP508B
    Text: May 1994 NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's


    Original
    NDP508A NDP508AE NDP508B NDP508BE NDB508A NDB508AE NDB508B NDB508BE NDP508 NDP508BE NDB508BE PDF

    NS4890

    Abstract: NDH8303N
    Text: N October 1996 PRELIMINARY NDH8303N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original
    NDH8303N NDH8303N NS4890 PDF

    NDB608A

    Abstract: NDB608AE NDB608B NDB608BE NDP608A NDP608AE NDP608B NDP608BE
    Text: May 1994 NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's


    Original
    NDP608A NDP608AE NDP608B NDP608BE NDB608A NDB608AE NDB608B NDB608BE NDP608 NDB608BE NDP608BE PDF

    NDB410A

    Abstract: NDB410AE NDB410B NDB410BE NDP410A NDP410AE NDP410B NDP410BE
    Text: May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's


    Original
    NDP410A NDP410AE NDP410B NDP410BE NDB410A NDB410AE NDB410B NDB410BE NDP410 NDB410BE NDP410BE PDF

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan
    2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1994 N NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    OCR Scan
    NDP408A NDP408AE NDP408B NDP408BE NDB408A NDB408AE NDB408B NDB408BE NDP408 PDF

    IRF612

    Abstract: IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513#
    Text: Standard Power MOSFETs- IRF610, IRF611, IRF612, IRF613 File Number 1576 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 150V-200V


    OCR Scan
    IRF610, IRF611, IRF612, IRF613 50V-200V IRF612 IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513# PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1994 N NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    OCR Scan
    NDP610A NDP610AE NDP610B NDP610BE NDB610A NDB610AE NDB610B NDB610BE NDP610 PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1994 N NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    OCR Scan
    NDP608A NDP608AE NDP608B NDP608BE NDB608A NDB608AE NDB608B NDB608BE NDP608 PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1994 N NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    OCR Scan
    NDP508A NDP508AE NDP508B NDP508BE NDB508A NDB508AE NDB508B NDB508BE NDP508 PDF

    78017

    Abstract: 7S1 zener diode NDP605A NDP605B NDP606A NDP606B
    Text: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high


    OCR Scan
    NDP605A/NDP605B, NDP606A/NDP606B LSQ1130 78017 7S1 zener diode NDP605A NDP605B NDP606A NDP606B PDF

    B5G1

    Abstract: ndp605A TO-220 NDP606A NDP605A NDP605B NDP606B zener diode u41
    Text: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high


    OCR Scan
    NDP605A/NDP605B, NDP606A/NDP606B 0-1B0-534 B5G1 ndp605A TO-220 NDP606A NDP605A NDP605B NDP606B zener diode u41 PDF

    IRF530

    Abstract: IRF532 L10M IRF531 IRF533 J56-1 IRF530 mosfet
    Text: Standard Power MOSFETs- IRF530, IRF531, IRF532, IRF533 File Num ber 1575 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V


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    IRF530, IRF531, IRF532, IRF533 0V-100V IRF532 50V0SS IRF530 L10M IRF531 J56-1 IRF530 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: M ay 1994 N NDP510A / NDP510AE / NDP510B / NDP510BE NDB510A / NDB510AE / NDB510B / NDB510BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    OCR Scan
    NDP510A NDP510AE NDP510B NDP510BE NDB510A NDB510AE NDB510B NDB510BE NDP510 PDF