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    IRF612 Search Results

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    IRF612 Price and Stock

    HARTING Technology Group IRF612

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF612 444
    • 1 -
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    New Jersey Semiconductor Products, Inc. IRF612

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF612 350 4
    • 1 -
    • 10 $1.56
    • 100 $0.975
    • 1000 $0.585
    • 10000 $0.585
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    International Rectifier IRF612

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRF612 30
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    Harris Semiconductor IRF612

    MOSFET Transistor, N-Channel, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF612 355
    • 1 $2.1
    • 10 $2.1
    • 100 $1.05
    • 1000 $0.84
    • 10000 $0.84
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    Rochester Electronics IRF612 368 1
    • 1 $0.49
    • 10 $0.49
    • 100 $0.4606
    • 1000 $0.4165
    • 10000 $0.4165
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    New Jersey Semiconductor Products Inc IRF612

    MOSFET Transistor, N-Channel, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF612 280
    • 1 $2.08
    • 10 $2.08
    • 100 $0.78
    • 1000 $0.728
    • 10000 $0.728
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    IRF612 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF612 Fairchild Semiconductor N-Channel Power MOSFETs, 3.5A, 150-200V Scan PDF
    IRF612 FCI POWER MOSFETs Scan PDF
    IRF612 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF612 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF612 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. Scan PDF
    IRF612 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF612 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF612 Motorola Switchmode Datasheet Scan PDF
    IRF612 Motorola European Master Selection Guide 1986 Scan PDF
    IRF612 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF612 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF612 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF612 Unknown FET Data Book Scan PDF
    IRF612 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF612 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF612 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF612 National Semiconductor N-Channel Power MOSFETs Scan PDF
    IRF612 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRF612(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF612R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF

    IRF612 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF610

    Abstract: power MOSFET IRF610 IRF611 irf610 mosfet irf612
    Text: IRF610, IRF611, IRF612, IRF613 S E M I C O N D U C T O R 2.6A and 3.3A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.6A and 3.3A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF610, IRF611, IRF612, IRF613 TA17442. IRF610 power MOSFET IRF610 IRF611 irf610 mosfet irf612

    Untitled

    Abstract: No abstract text available
    Text: IRF612 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)2.6# I(DM) Max. (A) Pulsed I(D)1.6 @Temp (øC)100 IDM Max (@25øC Amb)6.5# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)43# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF612

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    IRF470

    Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
    Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0


    Original     		PDF IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R

    1RF710

    Abstract: No abstract text available
    Text: N-Channel Power MOSFETs IRF510 IRF512 IRF513 MTP4N08 MTP4N10 IRF612 MTP2N18 MTP2N20 IRF711 •d nC Qfl Max C|M (pF) M in Max Co m (PF) Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 4.5 1 0.8 2 7.5 200 100


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF610 IRF611 IRF612 IRF613 1RF710

    IRF612R

    Abstract: IRF610R IRF611R IRF613R
    Text: _ Rugged Power MOSFETs IRF610R, IRF611R, IRF612R, IRF613R File Number 1988 Avalanche Energy Rated N-Channel Power MOSFETs 2 .0 A an d 2.5 A , 1 5 0 V -2 0 0 V ros on = 1 .5 0 a n d 2 .4 0 N-CHANNEL ENHANCEMENT MODE D Features: • ■ ■ ■


    OCR Scan     		PDF IRF610R, IRF611R, IRF612R, IRF613R 50V-200V IRF612R IRF613R aCS-421560 IRF610R IRF611R

    GG88

    Abstract: T3901
    Text: This N-Channel Power MOSFETs IRF510 By IRF512 Its IRF513 MTP4N10 IRF610 IRF612 MTP2N18 MTP2N20 IRF711 C rw Max PR Min Max (PR Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 f1 4.5 1 0.8 2 7.5 200 100 30 A1


    OCR Scan     		PDF D03711B gg8888Ã T-39-01 GG88 T3901

    IRF610

    Abstract: IRF612 IRF613 power MOSFET IRF610 IRF611 irf610 mosfet
    Text: ~Öi 387 508 1 G E S O L I D S T A T E D F | 3 fl7 S G fll □D1 ÛBM4 fl 01E 18344 D l - - _— _ Standard Power M OSFETs IRF610, IRF611, IRF612, IRF613 File Number 1576 Power MOS Field-Effect Transistors


    OCR Scan     		PDF IRF610, IRF611, IRF612, IRF613 50V-200V S2CS-33741 IRF612 IRF613 IRF610 power MOSFET IRF610 IRF611 irf610 mosfet

    IRF612

    Abstract: 250M IRF613 IRF612 ge transistor irf612
    Text: FIT HELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF612,613 2.0 AMPERES 200,150 VOLTS IFlDS ON = 2.4 n


    OCR Scan     		PDF IRF612 100ms 250/iA, 250M IRF613 IRF612 ge transistor irf612

    IRF612

    Abstract: IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513#
    Text: Standard Power MOSFETs- IRF610, IRF611, IRF612, IRF613 File Number 1576 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 150V-200V


    OCR Scan     		PDF IRF610, IRF611, IRF612, IRF613 50V-200V IRF612 IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513#

    Untitled

    Abstract: No abstract text available
    Text: IRF610, IRF611, IRF612, IRF613 HARRIS S E M I C O N D U C T O R 2.6A and 3.3A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs November 1997 Description Features 2.6A and 3.3A, 150V and 200V High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF610, IRF611, IRF612, IRF613 RF612, RF613

    IRF610

    Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
    Text: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF IRF610-613 MTP2N18/2N20 O-22QAB IRF610 IRF611 IRF612 IRF613 MTP2N18 NITP2N20 IRF610/612 IRF610 IRF612 irf P 611 IRF611 IRF613 MTP2N18 MTP2N20

    1RF540

    Abstract: 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 IRF530 LM3661TL-1.25 IRF533
    Text: - £> tt £ f m * V Vd s € £ eg. tS Ta=25*0 Vg s Id Pd V g s th) loss Igss or * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s (V) (Q) *typ (A) Id (A) Vg s (V) *typ (S)


    OCR Scan     		PDF 1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF540 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 LM3661TL-1.25 IRF533

    IRF013

    Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
    Text: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES TO-220 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • • • • Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF610/611/612/613 O-220 IRF610 IRF611 IRF612 IRF613 IRF013 D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q 613 33A

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E

    k 3561 MOSFET

    Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
    Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­


    OCR Scan     		PDF DK101 O-22QAB k 3561 MOSFET TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20

    IRF610

    Abstract: 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 MTP2N18
    Text: 3469674 FAIRCHI LD S E M I C O ND UC TO R TiTi PE B 3 M £3 ^ Ez,7 M IRF610-613 7'- ?- <3? MTP2N18/2N20 N-Channel Power MOSFETs, 3.5 A, 150-200 V • u ■naïf— — f a ir c h il d A Schlum berger Com pany Power And Discrete Division D e s c rip tio n Th ese devices are n-channel, enhancement mode, power


    OCR Scan     		PDF IRF610-613 MTP2N18/2N20 IRF610/612 NITP2N20 MTP2N18 IRF611/613 PCU100F IRF610 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613

    1RF630

    Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613
    Text: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) (pF) Id (A)


    OCR Scan     		PDF Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 1RF630 irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613

    IRF150 To220 package

    Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
    Text: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232


    OCR Scan     		PDF Q0D01b3 IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF150 To220 package irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V

    IRFZ30

    Abstract: IRFZ45 IRFZ32 irfz IRFZ12 THOMSON DISTRIBUTOR 58e d IRFZ20 IRFZ25 THOMSON 58E THOMSON 58E CASE OUTLINE
    Text: THOriSÜN/ DISTRIBUTOR SflE D • ÌOat.073 OOOSaDl HEXFET Powermosfets L^ l m TCSK intemaraonal Rectifier Plastic Insertable Package T0-220 N-Channel Part Number V p s Drain Source Voltage Volts R0S(on) On-State Resistance (Ohms) Iq Continuous Drain Current


    OCR Scan     		PDF T0-220 IRFZ12 O-220AB IRFZ10 IRFZ22 IRFZ20 IRFZ32 IRFZ30 IRFZ42 IRFZ40 IRFZ30 IRFZ45 IRFZ32 irfz THOMSON DISTRIBUTOR 58e d IRFZ20 IRFZ25 THOMSON 58E THOMSON 58E CASE OUTLINE

    1RF540

    Abstract: 1RF620 IRF449 1RF530 RF543 1rf521 irf362 irf413 IRF461 IRF352
    Text: - 252 - Mi X m *± % Vd s or « * % £ Vg s Pd Id Vg s th Id s s Ig s s fó % f Ds on) Vrs= te (Ta=25cO ) Id (on) Ci ss g fs Coss Crss * /CH (V) (A) * /CH <W) min (nA) Vg s (V) (uA) Vd s (V) (V) max (V) Id («A) % & m n V g s =0 Vg s Vd g (V) 11 fé (Ta=25tJ)


    OCR Scan     		PDF Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3300 O-220AB 1RF540 1RF620 IRF449 1RF530 RF543 1rf521 irf362 irf413 IRF461 IRF352