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    N-CHANNEL ENHANCEMENT MODE POWER MOSFET 40V Search Results

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET 40V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET 40V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    25n06

    Abstract: 25N06 MOSFET 25n06l utc25n06 d 25n06 relay 12v 100A 25n06g
    Text: UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR „ DESCRIPTION The UTC 25N06 is an N-channel enhancement mode Power MOSFET, which provides low gate charge, avalanche rugged technology, and so on.


    Original     		PDF 25N06 25N06 25N06 MOSFET 25n06l utc25n06 d 25n06 relay 12v 100A 25n06g

    Untitled

    Abstract: No abstract text available
    Text: 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4424, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4424, GSM4424SF Lane11

    Untitled

    Abstract: No abstract text available
    Text: 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4804, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4804, 0V/16A 0V/10A O-252-2L GSM4804DF O-252-2L) Lane11

    Untitled

    Abstract: No abstract text available
    Text: 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4906, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4906, GSM4906SF Lane11

    Untitled

    Abstract: No abstract text available
    Text: 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM4924, GSM4924SF Lane11

    Untitled

    Abstract: No abstract text available
    Text: 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2604, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM2604, 0V/20A 0V/12A O-252-2L GSM2604DF O-252-2L) Lane11

    marking n52

    Abstract: marking N52 mosfet ZVN4525E6TA DSA0037389 ZVP4525E6 device marking N52 marking QG SOT23-6 MARKING TR SOT23-6 P MOSFET N52 marking sot223 device Marking
    Text: ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVN4525E6 OT23-6 OT223 ZVP4525E6 OT23-6 marking n52 marking N52 mosfet ZVN4525E6TA DSA0037389 ZVP4525E6 device marking N52 marking QG SOT23-6 MARKING TR SOT23-6 P MOSFET N52 marking sot223 device Marking

    SOT23-6 MARKING 310

    Abstract: ZVN4525G p-channel 250V power mosfet ZVN4525GTA ZVN4525GTC ZVP4525G DSA0037391
    Text: ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVN4525G OT223 OT23-6 ZVP4525G OT223 SOT23-6 MARKING 310 ZVN4525G p-channel 250V power mosfet ZVN4525GTA ZVN4525GTC ZVP4525G DSA0037391

    marking n52

    Abstract: marking N52 mosfet ZVN4525ZTA MOSFET 4420 sot223 device Marking ZVN4525Z ZVP4525G DSA0037393 device marking N52
    Text: ZVN4525Z 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVN4525Z OT223 OT23-6 ZVP4525G marking n52 marking N52 mosfet ZVN4525ZTA MOSFET 4420 sot223 device Marking ZVN4525Z ZVP4525G DSA0037393 device marking N52

    5806SS

    Abstract: DIODE vsd N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 5806-S
    Text: CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC5806Q8 Description The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


    Original     		PDF C407Q8 MTC5806Q8 MTC5806Q8 UL94V-0 5806SS DIODE vsd N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 5806-S

    4422 mosfet

    Abstract: p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419
    Text: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525G OT223 OT23-6 ZVN4525G OT223 4422 mosfet p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT36N05 Power MOSFET 36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR „ DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current


    Original     		PDF UTT36N05 UTT36N05 UTT36N05L-TA3-T UTT36N05G-TA3-T QW-R502-654

    MRF138

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MRF138 VHP POWER MOSFET TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel Enhancement Mode DESCRIPTION: MRF138 is a N-Channel enhancement mode MOSFET, intended for use in 28V applications up


    Original     		PDF MRF138 MRF138 /30MHz 100mA

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTD454 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTD454 is an N-channel enhancement MOSFET providing perfect RDS ON and low gate charge with UTC advanced technology. The UTC UTD454 is intended for being used in PWM, load


    Original     		PDF UTD454 UTD454 O-252 UTD454L-TN3-R UTD454G-TN3-R UTD454L-TN3-T UTD454G-TN3-T QW-R502-259

    N-Channel 40V MOSFET

    Abstract: SPN5454
    Text: SPN5454 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN5454 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN5454 has been designed specifically to improve the overall


    Original     		PDF SPN5454 SPN5454 0V/10A N-Channel 40V MOSFET

    2804SS

    Abstract: 2804S N-Channel MOSFET 40V 7A
    Text: CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC2804Q8 BVDSS ID RDSON max N-CH 40V 7A 28mΩ P-CH -40V -6A 44mΩ Description The MTC2804Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


    Original     		PDF C438Q8 MTC2804Q8 MTC2804Q8 UL94V-0 2804SS 2804S N-Channel MOSFET 40V 7A

    utd454

    Abstract: on47
    Text: UNISONIC TECHNOLOGIES CO., LTD UTD454 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTD454 is an N-channel enhancement MOSFET providing perfect RDS ON and low gate charge with UTC advanced technology. The UTC UTD454 is intended for being used in PWM, load


    Original     		PDF UTD454 UTD454 O-252 UTD454G-TN3-R QW-R502-259 on47

    ISD18A

    Abstract: MOSFET 500V 18A 18n50
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 500V, 18A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode Power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.


    Original     		PDF 18N50 18N50 QW-R502-477 ISD18A MOSFET 500V 18A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.


    Original     		PDF 18N50 18N50 O-220F1 O-220F2 QW-R502-477

    SPN4526

    Abstract: marking 8 SOP-8P mosfet gate source voltage 20v N-Channel 40V MOSFET
    Text: SPN4526 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4526 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPN4526 SPN4526 0V/10A marking 8 SOP-8P mosfet gate source voltage 20v N-Channel 40V MOSFET

    SPN4546

    Abstract: 5V 2A MOSFET N-channel
    Text: SPN4546 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4546 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPN4546 SPN4546 5V 2A MOSFET N-channel

    spn4910

    Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 Vgs 40V mosfet N-Channel Enhancement Mode MOSFET N-Channel vgs 40V MOSFET
    Text: SPN4910 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4910 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		PDF SPN4910 SPN4910 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 Vgs 40V mosfet N-Channel Enhancement Mode MOSFET N-Channel vgs 40V MOSFET

    RL20 rectifier diode

    Abstract: marking Td MOSFET 80A diode
    Text: SPN8080 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8080 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPN8080 SPN8080 0V/80A 0V/37A RL20 rectifier diode marking Td MOSFET 80A diode

    SPN2318S23RGB

    Abstract: SPN2318 5V 2A MOSFET N-channel 2A-13 Vgs 40V mosfet
    Text: SPN2318 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPN2318 SPN2318 SPN2318S23RGB 5V 2A MOSFET N-channel 2A-13 Vgs 40V mosfet