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    N-CHANNEL MOSFET 600V 36A Search Results

    N-CHANNEL MOSFET 600V 36A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL MOSFET 600V 36A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SupreMOS FCA36N60NF TM tm N-Channel MOSFET, FRFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCA36N60NF FCA36N60NF

    APT34M60B

    Abstract: APT34M60S MIC4452 AG124
    Text: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT34M60B APT34M60S APT34M60B APT34M60S MIC4452 AG124

    Untitled

    Abstract: No abstract text available
    Text: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT34M60B APT34M60S APT34M60B

    Untitled

    Abstract: No abstract text available
    Text: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT34M60B APT34M60S

    36N60

    Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
    Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)


    Original     		PDF 32N60 36N60 36N60 32N60 250ns O-264 IXFN SOT227 fast diode SOT-227 D-68623

    Untitled

    Abstract: No abstract text available
    Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)


    Original     		PDF 32N60 36N60 36N60 32N60 250ns O-264

    fairchild 4245

    Abstract: FCA36N60NF
    Text: SupreMOS FCA36N60NF N-Channel tm SupreMOS®, FRFET®,MOSFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS® MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		PDF FCA36N60NF FCA36N60NF fairchild 4245

    Untitled

    Abstract: No abstract text available
    Text: APT34F60B APT34F60S 600V, 36A, 0.19Ω Max trr ≤250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits


    Original     		PDF APT34F60B APT34F60S 250ns

    Untitled

    Abstract: No abstract text available
    Text: APT34F60B APT34F60S 600V, 36A, 0.19Ω Max trr ≤250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits


    Original     		PDF APT34F60B APT34F60S 250ns APT34F60B APT30

    FCP36N60N

    Abstract: fcp36N60 Mosfet application note fairchild FCp Series MOSFET 600V 36A
    Text: SupreMOSTM FCP36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCP36N60N FCP36N60N fcp36N60 Mosfet application note fairchild FCp Series MOSFET 600V 36A

    Fairchild Semiconductor - Process

    Abstract: FCP36N60N mosfet 600v
    Text: SupreMOSTM FCP36N60N tm N-Channel MOSFET 600V, 36A, 90mΩ Features Description • RDS on = 81mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCP36N60N Fairchild Semiconductor - Process FCP36N60N mosfet 600v

    FCB36N60N

    Abstract: ISD36A MOSFET 600V 36A
    Text: SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCB36N60N FCB36N60N ISD36A MOSFET 600V 36A

    APT34F60B

    Abstract: APT34F60S MIC4452
    Text: APT34F60B APT34F60S 600V, 36A, 0.19Ω Max trr ≤250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original     		PDF APT34F60B APT34F60S 250ns APT34F60B APT34F60S MIC4452

    IXFR64N60P

    Abstract: No abstract text available
    Text: IXFR64N60P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = =   600V 36A  105m 200ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		PDF IXFR64N60P 200ns ISOPLUS247 E153432 100ms 80N60P3 5-15-14-F IXFR64N60P

    NTE2995

    Abstract: No abstract text available
    Text: NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D RDS on = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate−to−Source Zener Diode Protected Applications: D High Current, High Speed Switching D Ideal for Off−Line Power Supplies, Adaptor and PFC


    Original     		PDF NTE2995 NTE2995

    10Kf6 diode

    Abstract: 10KF6 10KF6 diode International Rectifier 10kf6 diode rectifier switch mode inverter circuit diagrams IRS2117 IRS21171 IRS2118 JESD22-A114 JESD78
    Text: February 18, 2009 IRS211 7,71,8 (S) SINGLE CHANNEL DRIVER Product Summary IC Features • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20V


    Original     		PDF IRS211 IRS2117 IRS2118 0V-20 IRS21171 IRS2118 10Kf6 diode 10KF6 10KF6 diode International Rectifier 10kf6 diode rectifier switch mode inverter circuit diagrams IRS21171 JESD22-A114 JESD78

    10Kf6 diode

    Abstract: 10KF6 diode International Rectifier 10KF6
    Text: February 18, 2009 IRS211 7,71,8 (S) SINGLE CHANNEL DRIVER Product Summary IC Features • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20V


    Original     		PDF IRS211 IRS2117 IRS2118 0V-20 IRS21171 IRS2118 10Kf6 diode 10KF6 diode International Rectifier 10KF6

    relay finder 45.61

    Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
    Text: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 Safety10 A331-1-C2A7M A331-1-C2-A73 24Vdc 110Vac 240Vac A331-1-C2-A7D relay finder 45.61 reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415

    schematic diagram 230VAC to 24VDC POWER SUPPLY

    Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
    Text: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element14 schematic diagram 230VAC to 24VDC POWER SUPPLY 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P

    10Kf6 diode

    Abstract: No abstract text available
    Text: October 29th, 2008 IRS211 7,71,8 (S) SINGLE CHANNEL DRIVER Product Summary IC Features • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20V


    Original     		PDF IRS211 IRS2117 IRS2118 0V-20 IRS21171 IRS2118 200Additional 10Kf6 diode

    220 volt ac relays switch ups converter circuit

    Abstract: HUF76639 TO-251 footprint 6 PIN SMD IC FOR SMPS linear technology 6 PIN SMD IC 36A 6 FOR SMPS huf75652 MA8630 HIP1011 HIP6000 HIP6021
    Text: INS-Power_NL-insert-F 11/1/99 4:21 PM Page 1 For information, technical assistance, local sales, or distributor office, call 1-888-intersil and ask for ext. 7956 • Internet www.intersil.com • Technical Assistance E-mail: centapp@intersil.com sales office headquarters


    Original     		PDF 1-888-intersil O-263 HUF76633S3S FN4693 HUF76629D3S FN4692 O-252 HUF76619D3, HUF76619D3S 220 volt ac relays switch ups converter circuit HUF76639 TO-251 footprint 6 PIN SMD IC FOR SMPS linear technology 6 PIN SMD IC 36A 6 FOR SMPS huf75652 MA8630 HIP1011 HIP6000 HIP6021

    CIRCUIT BREAKER AEG me 800

    Abstract: catalog for 3RT series contactor* siemens Weidmuller upac Telemecanique catalog 9101900000 Siemens 4-20mA Loop Isolator catalog for 3RT Power contactor* siemens upac MCB 10 AMP 87426
    Text: CATALOGUE 10 2006/2007 Short Form Catalogue Quick Reference Guide Company profile Weidmüller is the leading manufacturer of components for electrical and electronic interconnection technologies. The company develops, produces and sells customer-oriented solutions comprising the entire Weidmüller product portfolio.


    Original     		PDF

    IR2133 application note

    Abstract: IR2133 application notes
    Text: Data Sheet No. PD60107 revX IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) & (PbF) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and


    Original     		PDF PD60107 IR2133/IR2135 IR2233/IR2235 0V/12V 28-Lead IR2133 application note IR2133 application notes

    36N60

    Abstract: 32N60 D-68623 ld25 sot-223
    Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data IXFK/FN 36N60 IXFK/FN 32N60 HiPerFET Power MOSFET D vv DSS ^D25 600V 600V 36A 32A DS on 0.18Q 0.25Q 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions


    OCR Scan     		PDF 32N60 32N60 36N60 36N60 250ns D-68623 ld25 sot-223