IXGH32N60C
Abstract: 32N60C IXGH32N60
Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C
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32N60C
IC110
O-268
O-247
IXGH32N60C
32N60C
IXGH32N60
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36N60
Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)
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32N60
36N60
36N60
32N60
250ns
O-264
IXFN SOT227
fast diode SOT-227
D-68623
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PDF
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32N60B
Abstract: 32n60 32N60BD1 D25VF IXGH32N60B
Text: HiPerFASTTM IGBT IXGH 32N60B IXGT 32N60B IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE sat tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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32N60B
32N60BD1
O-247
O-268
32N60B
32n60
32N60BD1
D25VF
IXGH32N60B
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Untitled
Abstract: No abstract text available
Text: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series VCE IC25 VCE sat typ tfi typ ISOPLUS247TM package (Electrically Isolated Back Side) = 600 V = 45 A = 2.1 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V
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32N60C
ISOPLUS247TM
IC110
E153432
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PDF
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Untitled
Abstract: No abstract text available
Text: IXGH 32N60CD1 IXGT 32N60CD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms
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32N60CD1
32N60CD1
O-247
O-268
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PDF
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Untitled
Abstract: No abstract text available
Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)
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32N60
36N60
36N60
32N60
250ns
O-264
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PDF
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Untitled
Abstract: No abstract text available
Text: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series ISOPLUS247TM package VCE IC25 VCE sat typ tfi typ (Electrically Isolated Back Side) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
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32N60C
ISOPLUS247TM
IC110
247TM
E153432
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PDF
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32N60CD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGH 32N60CD1 IXGT 32N60CD1 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms
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32N60CD1
32N60CD1
O-247
O-268
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PDF
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32N60CD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGH 32N60CD1 IXGT 32N60CD1 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings IC25 TC = 25°C 60 A IC90 TC = 90°C 32
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32N60CD1
O-247
32N60CD1
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PDF
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32N60AS
Abstract: D-68623
Text: IXGH 32N60A IXGH 32N60AS VCES IC25 VCE sat tfi HiPerFASTTM IGBT = = = = 600 V 60 A 2.9 V 125 ns TO-247 SMD (32N60AS) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; R GE = 1 MΩ 600 V VGES Continuous ±20 V
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32N60A
32N60AS
O-247
32N60AS)
D-68623
32N60AS
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32N60A
Abstract: 32n60 32N60AU1 32N60AU
Text: HiPerFASTTM IGBT IXGH 32N60A VCES IC25 VCE sat tfi = = = = 600 V 60 A 2.9 V 175 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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32N60A
32N60A
32N60AU1
32n60
32N60AU
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32N60AU1
Abstract: IXGH32N60AU1
Text: HiPerFASTTM IGBT with Diode IXGH 32N60AU1 Combi Pack VCES IC25 VCE sat tfi = = = = 600 V 60 A 2.9 V 175 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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32N60AU1
32N60AU1
IXGH32N60AU1
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C VCES IC25 VCE sat tfi typ = 600 V = 60 A = 2.5 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600
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32N60C
32N60C
IC110
O-268
O-247
728B1
123B1
065B1
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C
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Original
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32N60C
O-268
IC110
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGH 32N60BU1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms
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32N60BU1
O-247
IXGH32N60BU1
728B1
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PDF
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Untitled
Abstract: No abstract text available
Text: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series VCE IC25 VCE sat tfi typ ISOPLUS247TM package (Electrically Isolated Back Side) = 600 V = 45 A = 2.7 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
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Original
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32N60C
ISOPLUS247TM
IC110
247TM
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PDF
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32N60CD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode ISOPLUS247TM VCES IC25 IXGR 32N60CD1 = 600 V = 45 A = 2.7 V = 55 ns VCE SAT tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 Symbol Test Conditions VCES TJ = 25°C to 150°C
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ISOPLUS247TM
32N60CD1
2x31-06B
32N60CD1
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PDF
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smd diode 819
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C
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OCR Scan
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IXGH32N60AU1
IXGH32N60AU1S
O-247
32N60AU1S)
IXGH32N60AU1
IXQH32N60AU1S
XGH32N60AU1
smd diode 819
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PDF
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ixgk32n60
Abstract: No abstract text available
Text: ÎXYS HiPerFAST IGBT IXGH 32N60A 1XGH 32N60AS CES ^C25 v CE sat t,i Symbol Test Conditions v CES T j = 25°C to 150°C v CGR T j = 25°C to 150°C; RGE = 1 M il 600 V Continuous ±20 V V* GEM Transient ±30 V ^C25 Tc = 25°C 60 A Tc = 90°C 32 A ^CM Tc = 25“C, 1 ms
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OCR Scan
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32N60A
32N60AS
T0-247
32N60AS)
O-247
B2-65
ixgk32n60
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PDF
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Untitled
Abstract: No abstract text available
Text: Hi Per FAST IGBT with Diode IXGH 32N60BD1 CES CE sat Combi Pack t f1 600 60 2.2 80 V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j =25° C to 150° C 600 V VCGR T j = 25° C to 150° C; RGE= 1 M ii 600 V v GES Continuous
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OCR Scan
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32N60BD1
O-247
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PDF
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IXGH32N60B
Abstract: No abstract text available
Text: HiPerFAST IGBT IXGH 32N60B IXGH 32N60BS vCES ^C25 v* CE sat = = = = 600 V 60 A 2.5 V 80 ns ÒE Maximum Ratings Symbol Test Conditions VCEs T j = 2 5 °C to 1 5 0 °C 600 V VCOR v GES T, = 25°C to 150°C; RGE = 1 Mi2 600 V Continuous ±20 V v GEM Transient
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OCR Scan
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32N60B
32N60BS
B2-73
IXGH32N60B
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PDF
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KM10T
Abstract: No abstract text available
Text: HiPerFAST IGBT Lightspeed™ Series V CES IXGH 32N60C IXGT 32N60C ^C25 V CE sat typ ^ fity p 600 V 60 A 2.1 V 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings T j = 25°C to 150°C 600 V Tj = 25° C to 150° C; RQE = 1 MQ 600 V Continuous
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OCR Scan
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32N60C
32N60C
O-247
KM10T
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PDF
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Untitled
Abstract: No abstract text available
Text: IXGH 32N60A IXGH 32N60AS HiPerFAST IGBT = = = = CES v C25 CE sat tfi 600 V 60 A 2.9 V 125 ns *4 $ Maximum IRatings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CQR Tj = 25°C to 150°C; RGE = 1 M£2 600 V v GES Continuous ±20 V v GEM Transient
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OCR Scan
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32N60A
32N60AS
O-247
32N60AS)
Hbflb25b
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PDF
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Untitled
Abstract: No abstract text available
Text: a ix Y S Advanced Technical Information IXGH 32N60CD1 VCES IC25 HiPerFAST IGBT with Diode V CE SAT typ Light Speed Series Symbol t f1(typ) Test Conditions Maximum Ratings =25° C to 150° C 600 V T, : 25°C to 150°C: FL 600 V Continuous ±20 V Transient
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OCR Scan
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32N60CD1
O-247AD
O-247AD
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PDF
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