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    N-P-N SILICON POWER TRANSISTORS Search Results

    N-P-N SILICON POWER TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N-P-N SILICON POWER TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6079

    Abstract: No abstract text available
    Text: 2N6079 High-voltage high-power silicon N-P-N transistor. 8.14 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6079 Online Store 2N6079 Diodes High-voltage high-power silicon N-P-N transistor. Transistors Integrated Circuits Optoelectronics


    Original     		PDF 2N6079 2N6079 com/2n6079

    2N697

    Abstract: No abstract text available
    Text: 2N697 Silicon N-P-N Planar Transistor. 1.61 Transistors Bipolar Silicon NPN Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N697 Online Store 2N697 Diodes Silicon N -P-N Planar Transistor. Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		PDF 2N697 2N697 O-205AD com/2n697

    Untitled

    Abstract: No abstract text available
    Text: _ J v _ BDT61;61A BDT61B;61C SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60, 60A, 60B and 60C.


    OCR Scan     		PDF BDT61 BDT61B BDT60, BDT61 bbS3T31 0034bfll 7Z82097 QQ34bfl2

    BDT60

    Abstract: kia 494 BDT60B BDT61 BDT61A BDT61B BDT61C transistor 2TH transistor d 1991 ar
    Text: BDT60;60A BDT60B;60C J ^ SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. O-220. 0D34bb7 kia 494 BDT61 BDT61A BDT61C transistor 2TH transistor d 1991 ar

    T2D 22 diode

    Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
    Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. BDT60 T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode

    GE10023

    Abstract: No abstract text available
    Text: GE10015,16,20,21,22,23 File Number Silicon N-P-N Darlington Power T ransistors 2374 TERM IN A L D ESIG N A TIO N S c FLANGE The GE10015, GE10016and GE10020thru GE10023 series of silicon n-p-n power Darlington transistors are designed for use in power switching applications requiring highvoltage capability and fast switching speeds. They are


    OCR Scan     		PDF GE10015 GE10015, GE10016and GE10020thru GE10023 T0-204AE O-204AE GE10020 GE10021

    JEDEC-TO-202AB

    Abstract: d40e d40es D40E1 d41e D40E7
    Text: File Number D40E Series 2335 2-Ampere Silicon N-P-N Power Transistors Complementary to the D41E Series • High free-air power dissipation • • Low collector saturation voltage 0.5V typ. @ 1.0A lç Excellent linearity • Fast switching The D40E-series of silicon n-p-n power transistors are


    OCR Scan     		PDF D40E-series JEDECTO-202AB O-202AB D40E1 D40E5 D40E7 JEDEC-TO-202AB d40e d40es d41e D40E7

    Untitled

    Abstract: No abstract text available
    Text: BD840 BD842 BD844 _ J \ _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic TO-202 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD839, BD841 and BD843.


    OCR Scan     		PDF BD840 BD842 BD844 O-202 BD839, BD841 BD843.

    Untitled

    Abstract: No abstract text available
    Text: _ J \ _ BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.


    OCR Scan     		PDF BD944 BD946 BD948 BD943; CBD944 0Q34552

    2N3D55

    Abstract: SDT9202 2N3055 12V SDT9204 SDT9201 SDT9203 2N3055 2N3055 silicon solidev kuhnke relay 24vdc
    Text: Sem iconductors Solidev Silicon Power Transistors P H Y S IC A L D IM E N S IO N S Silicon N P N Power Transistors— 15 A m p FEATURES Rugged single diffused technology - 1MHz fT. Low saturation voltage - typically 0.3 V at Ic = 4 amps. High typical gain.


    OCR Scan     		PDF 2N3D55 SDT9201 SDT9202 SDT9203 SDT9204 2N3055 5064A 35065X 2N3055 12V SDT9204 2N3055 silicon solidev kuhnke relay 24vdc

    transistor tl 188

    Abstract: 92CS-27516
    Text: BUX11A High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor TERMINAL DESIGNATIONS c £ Features: • I / c eo 1353 File N um ber FLANGE _ -190 V 92CS-27516 m l c - 20 A ■ Pt - 200 W JEDEC TO-204AA POWER TRANSISTORS The RCA-BUX11A epitaxial-base silicon n-p-n transistor


    OCR Scan     		PDF BUX11A 92CS-27516 O-204AA RCA-BUX11A O-204AA 92CS-3227I transistor tl 188 92CS-27516

    BD840

    Abstract: BD841 BD839 BD842 BD843 BD844
    Text: BD839 BD841 BD843 SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N silicon transistors, in a plastic T0-202 envelope, recommended for use in television circuits and audio applications. P-N-P complements are BD840, BD842 and BD844. QUICK REFERENCE DATA BD839


    OCR Scan     		PDF BD841 BD843 T0-202 BD840, BD842 BD844. BD839 BD841 m782983 BD840 BD843 BD844

    c 2432

    Abstract: D72F5T2 NPN
    Text: D72F5T1, D72F5T2 File Number 2363 5-Ampere Silicon N-P-N Power Transistors T E R M IN A L D E S IG N AT IO N Features: Low Vqe sat m Fast switching speed • Complementary to D73F5T1,2 ■ The D72F5T1 and D72F5T2 silicon n-p-n power transistors are designed for high current switching applications. They


    OCR Scan     		PDF D72F5T1, D72F5T2 D73F5T1 D72F5T1 D72F5T2 O-251 O-252 -252AA c 2432 D72F5T2 NPN

    5BE1

    Abstract: bdt61 Darlington NPN Silicon Diode
    Text: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ]> I 711002 3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.


    OCR Scan     		PDF BDT61 BDT61B BDT60, O-220. 7110fl2b G04B527 B2097 5BE1 Darlington NPN Silicon Diode

    BDT61

    Abstract: dg43550 BDT60 BDT61B QGM3221 diagram DARLINGTON
    Text: BDT61;61A BDT61B;61C PHILIPS INTERN A T I O N A L SbE D I 711002b 00M3250 A44 W p H l N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in m onolithic Darlington circuit for audio o utpu t stages and general purpose am plifier applications.


    OCR Scan     		PDF BDT61 BDT61B 711002b DG43550 BDT60, 711005b 7Z82099 dg43550 BDT60 QGM3221 diagram DARLINGTON

    BD946

    Abstract: BD944 BD948 lc 945 p transistor BD943 IEC134
    Text: BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE DATA BD944 946 948


    OCR Scan     		PDF BD944 BD946 BD948 BD943; BD944 500mA -lc-250mA BD946 BD948 lc 945 p transistor BD943 IEC134

    Untitled

    Abstract: No abstract text available
    Text: BD839 BD841 BD843 JV SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N silicon transistors, in a plastic T0-202 envelope, recommended fo r use in television circuits and audio applications. P-N-P complements are BD840, BD842 and 8D844. QUICK REFERENCE DATA


    OCR Scan     		PDF BD839 BD841 BD843 T0-202 BD840, BD842 8D844.

    b0945

    Abstract: bd947 BD944 BD945 BD943
    Text: BD943 BD945 BD947 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948. QUICK REFERENCE D ATA


    OCR Scan     		PDF BD944; BD943 lc-500mA O-220. BD947. 7Z82147 7Z82146 003MS40 BD945 b0945 bd947 BD944 BD945 BD943

    TA8210

    Abstract: TA8232 TA8232 h TA8723 2N6108 RCA ta7741 TA7743 TA7742 ta7782 2N6475
    Text: Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors TERMINAL DESIGNATIONS 7=3 3 - £ General-Purpose Medium-Power Types for Switching and Amplifier Applications Features: • Low saturation voltages • Complementary n-p-n and p-n-p types • Maximum safe-area-of-operation curves specified


    OCR Scan     		PDF 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 2N6473, 2N6474* 2N6475, 2N6476" 100s2) TA8210 TA8232 TA8232 h TA8723 2N6108 RCA ta7741 TA7743 TA7742 ta7782 2N6475

    D73F5T2

    Abstract: No abstract text available
    Text: File Number D73F5T1, D73F5T2 2367 5-Ampere Silicon P-N-P Power Transistors Features: TERMINAL DESIGNATION • Low Vce sat m Fast switching speed m Complementary to D72F5T1,2 The D73F5T1 and D73F5T2 silicon p-n-p power transistors are designed for high current switching applications. They


    OCR Scan     		PDF D73F5T1, D73F5T2 D72F5T1 D73F5T1 D73F5T2 O-251 O-252

    028A5

    Abstract: BD264 MT27 package 2SC5220 2SC5240 B3539 BLY95 MSP90 TA2084
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan     		PDF

    D44VH7

    Abstract: d44vh10
    Text: D44VH Serles File Number 2350 Silicon N-P-N Transistors Complementary to the D45VH Series Features: • Fast Switching ts < 700 ns resistive tf < 200 ns ■ Low VCE saf < 0.4V @ ;c = 8A TERMINAL DESIGNATIONS The D44VH series of silicon n-p-n power transistors are


    OCR Scan     		PDF D44VH D45VH D44VH7 d44vh10

    U22 2.5A 250V

    Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan     		PDF NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 U22 2.5A 250V P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644

    2N4241

    Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan     		PDF NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; 2N4241 OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S