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    N02L83W2AT5I Search Results

    N02L83W2AT5I Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    N02L83W2AT5I On Semiconductor 2 Mb, 3 V Low Power SRAM; Package: TSOP II; No of Pins: 44; Container: Tray; Qty per Container: 156 Original PDF

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    DIN 13715

    Abstract: 12197-507-XTD AMIS41683CANN1G N08L6182AB27I FS7145-02G-XTD valve positioners 11640-843-XTP vending machine fuji SEOUL 5630 LED DATASHEET 19699-002-XTP
    Text: Ultra-Low Power SRAMs Density Mb Organization Voltage Range Speed (ns) Features Package N08L6182A Part Number 8 512 Kb x 16 1.65 - 2.2 70 Dual CE 48-BGA N08L63W2A 8 512 Kb x 16 2.3 - 3.6 70 Dual CE 48-BGA N04L63W2A 4 256 Kb x 16 2.3 - 3.6 55 Dual CE 44-TSOP2, 48-BGA


    Original     		PDF N08L6182A 48-BGA N08L63W2A N04L63W2A 44-TSOP2, N04L63W1A DIN 13715 12197-507-XTD AMIS41683CANN1G N08L6182AB27I FS7145-02G-XTD valve positioners 11640-843-XTP vending machine fuji SEOUL 5630 LED DATASHEET 19699-002-XTP

    N02L83W2AT25I

    Abstract: N02L83W2AT5I
    Text: N02L83W2A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit Overview The N02L83W2A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to


    Original     		PDF N02L83W2A N02L83W2A -40oC N02L83W2AT25I N02L83W2AT5I

    Untitled

    Abstract: No abstract text available
    Text: N02L83W2A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit Overview Features The N02L83W2A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using ON


    Original     		PDF N02L83W2A N02L83W2A