MN3010

Abstract: BBD delay line chorus Effect bbd ic MN301 512-STAGE
Contextual Info: N3010 MOS 1C, LSI N3010 f a T Ì V 5 1 2 & 7 1 - □ < f \% U — / 4 B B D X Dual 5 1 2 - S t a g e L o w N o i s e B B D for Analog Signal D e la ys • flSE ^ / D e s c r i p t i o n N3010 li , U n it • ram 2.0 7 ^ 512 I S o — / -i y '{ - r i. -J 7 ^ y

flanger

Abstract: MN3007 N3006 chorus Effect mn3001 MN3008 MN3010 N3009 mn3002 delay MN3005
Contextual Info: BBD's for variable delay lines in audio frequency range & M N 3001 M N 3 00 2 M N 3003 M N 3005 M N 3008 M N 3006 M N 3007 M N 3 00 9 È S ^^Ê ^^iâÊ S Ê ^^^^^^^S Ê Ê S Ê ÎÊ ^S âS S Ê ^S ^^S S Ê ^^& & Ê Ê ^IiS S Ê Ê ^Ê i t D —fcP 500 •

Contextual Info: MOS 1C, L S I N3010 N3010 f T iV 512 & a 7 i - n □ / - < X B B D Dual 5 1 2 -S tag e Low N oise B B D for Analog Signal Delays H fit fi/D e sc rip tio n r i & N3010 l i , I 7 v v •>-co£t.'fr i r iv 512 | £ n - / \ X B B D X ', h tri t i ~ c 51.2 m s

Contextual Info: N3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 9mΩ @ VGS = 10V • 13mΩ @ VGS = 4.5V

N3010LS

Contextual Info: N3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 9mΩ @ VGS = 10V • 13mΩ @ VGS = 4.5V

Contextual Info: Semiconductor Semiconductorfuses AC fuses Protistor Square-body Fuses PSC aR sizes 7x - 650 V to 1300 VAC American Terminals - 70 - 73 End contacts Size 70 71 72 73 Designation A130URD A130URD A130URD A130URD A130URD A130URD A130URD A130URD A130URD A120URD

A070UD33TTI630

Abstract: A070UD31TTI550
Contextual Info: Semiconductor Semiconductorfuses AC fuses Protistor Square-body Fuses PSC aR sizes 3x - 450V to 700 VAC Main characteristics 450 TO 700VAC / 63 TO 2800A Recognized Exceptionally low I2T, Watt losses. Non-magnetic construction, Highly reliable low voltage

Contextual Info: N3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = +25°C 9mΩ @ VGS = 10V 16A 13mΩ @ VGS = 4.5V 13.3A V(BR)DSS 30V •     Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

8DB0056-001

Abstract: TAG 203 350 TLU 315 RS63H neutral link RS20HWH 5SE200 NS16M20 TLU800 F076802 RSL63H
Contextual Info: Fuse Links Safeclip Fittings RS Fittings Identification & Selection Chart 153 Industrial Fuse Links BS88 Clip-in BS88 Bolt-in 415 - 660V DIN Ferrule 500/660V DIN NH 500/690V DIN Bottle 500V UL North American Miniature M205 & 3AG 156 158 175 176 179 184 172

Contextual Info: N3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 9mΩ @ VGS = 10V • 13mΩ @ VGS = 4.5V Low Gate Threshold Voltage

E301051

Abstract: A130UD72TTI630 A070URD A110UD73TTI1000 H301054 A070UD73TTI v15 1800 1 A130UD72TTI550 J3010 D301050
Contextual Info: Semiconductor Semiconductorfuses AC fuses Protistor Square-body Fuses PSC aR sizes 7x - 650 V to 1300 VAC Main characteristics Recognized 650 to 1300VAC / 63 to 2800A. • • • • • • • • Exceptionally low I2T, Watt losses. Non-magnetic construction, highly reliable low voltage.

Contextual Info: N3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 9mΩ @ VGS = 10V • 13mΩ @ VGS = 4.5V

DMN3010LSS

Abstract: N3010LS DMN3010LSS-13 J-STD-020D
Contextual Info: N3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 9mΩ @ VGS = 10V • 13mΩ @ VGS = 4.5V Low Gate Threshold Voltage

Contextual Info: N3010LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Green Product Summary V BR DSS RDS(ON) 30V 9.5mΩ @ VGS = 10V 11.5mΩ @ VGS = 4.5V Features ID TC = +25°C 43A 39A density end products This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: N3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features N EW PRODU CT • • • • • • • • Mechanical Data • • Low On-Resistance • 9m @ VGS = 10V • 13m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

ferraz protistor a070

Abstract: A070UD31TTI450 A070UD31TTI630 Q301084 J300480 Y300838 A070UD31TTI550 ferraz protistor 660v fuses A070UD33TTI1250 A065UD33tti160
Contextual Info: Semiconductor Semiconductorfuses AC fuses Protistor Square-body Fuses PSC aR sizes 3x - 450V to 700 VAC Main characteristics 450 TO 700VAC / 63 TO 2800A Recognized Exceptionally low I2T, Watt losses. Non-magnetic construction, Highly reliable low voltage