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    N4937 Search Results

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    N4937 Price and Stock

    Rochester Electronics LLC 1N4937

    DIODE GEN PURP 600V 1A AXIAL
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    DigiKey 1N4937 Bulk 2,669,113 14,424
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    onsemi 1N4937RLG

    DIODE GEN PURP 600V 1A AXIAL
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    DigiKey 1N4937RLG Reel 70,000 5,000
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    Mouser Electronics 1N4937RLG 33,378
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    Newark 1N4937RLG Cut Tape 1,986 1
    • 1 $0.325
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    1N4937RLG Reel 10,000
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    TME 1N4937RLG 1
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    Richardson RFPD 1N4937RLG 25,000
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    Avnet Asia 1N4937RLG 18 Weeks 25,000
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    Avnet Silica 1N4937RLG 19 Weeks 5,000
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    Chip1Stop 1N4937RLG 55,000
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    1N4937RLG 8,545
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    EBV Elektronik 1N4937RLG 20 Weeks 5,000
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    Master Electronics 1N4937RLG 20,000
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    Taiwan Semiconductor 1N4937GH

    DIODE GEN PURP 600V 1A DO204AL
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    DigiKey 1N4937GH Reel 10,000 5,000
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    Mouser Electronics 1N4937GH
    • 1 $0.36
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    Diodes Incorporated 1N4937-T

    DIODE GEN PURP 600V 1A DO41
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    DigiKey 1N4937-T Reel 10,000 5,000
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    1N4937-T Cut Tape 4,345 1
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    Avnet Americas 1N4937-T Reel 8 Weeks 5,000
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    Mouser Electronics 1N4937-T 11,990
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    Newark 1N4937-T Cut Tape 9,780 5
    • 1 $0.181
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    Bristol Electronics 1N4937-T 8,807
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    1N4937-T 5,000
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    Avnet Silica 1N4937-T 10,000 10 Weeks 5,000
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    New Advantage Corporation 1N4937-T 75,000 1
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    EIC Semiconductor Inc 1N4937T/R

    DIODE GEN PURP 600V 1A DO41
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    DigiKey 1N4937T/R Reel 10,000 5,000
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    N4937 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Siemens Ni1000 temperature sensor

    Abstract: n531 QAC22 N9292 LG-Ni1000 QFM3100 triac BT 317 DATASHEET
    Text: System Catalog 2014 The information in this document contains general descriptions of technical options available, which do not always have to be present in individual cases. The required features should therefore be specified in each individual case at the time of closing the contract.


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    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    Untitled

    Abstract: No abstract text available
    Text: 1N4933/L - 1 N4937/L 1.0A FAST RECOVERY RECTIFIERS Features Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Reverse Leakage Current Plastic Material - UL Flammability


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    PDF 1N4933/L N4937/L DO-41 MIL-STD-202, DS26002 1N4933/L-1N4937/L N4933/L-1N4937/L

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    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R tm 1N4933GP - 1 N4937GP 1.0 min 25.4 Features • Low forw ard voltage drop. Dimensions in inches (mm) • High surge current capability 0.205 (5.21) 0.160 (4.06) • High reliability. • 0.107 {2 .12 ) 0.080 (2.03) DO-41 High current capability.


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    PDF 1N4933GP N4937GP DO-41 N4933GP-1 N4937GP, 1N4933GP-1N4937GP

    1N4933

    Abstract: 1N4934 1N4935 1N4936 1N4937 A-405
    Text: 1N4933G/L - 1 N4937G/L VISHAY 1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER y LITEMZI POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak


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    PDF 1N4933G/L -1N4937G/L MIL-STD-202, DO-41 DO-41 300ns DS27002 1N4937G/L 1N4933 1N4934 1N4935 1N4936 1N4937 A-405

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R tm 1N4933GP - 1 N4937GP 1.0 min Features 25 .4 • Low forw a rd voltage drop. Dimensions in niches (mm) • High surge current capability. 0.205 (5.21) 0.160 (4.06) • High reliability. • 0.107 (2.72) 0.080 (2.03) High current capability.


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    PDF 1N4933GP-1N4937GP 1N4933GP N4937GP N4933GP-1 N4937GP,

    N4937

    Abstract: No abstract text available
    Text: 1 N 4933.1 N4937 Schnelle Silizium Gleichrichter Fast Silicon Rectifier 1A Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 600 V Plastic case Kunststoffgehäuse - DO-41 Weight approx. Gewicht ca. ¿ 0.8 0.4 g


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    PDF N4937 DO-41 UL94V-0 N4933 N4934 N4935 N4936 R0D1RS14 DGG174 N4937

    Untitled

    Abstract: No abstract text available
    Text: 1N4933G/L - 1 N4937G/L 1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Plastic Material: UL Flammability


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    PDF 1N4933G/L N4937G/L DO-41 IL-STD-202, DS27002 1N4937G/L

    1N4933

    Abstract: 1N4934 1N4935 1N4936 1N4937 A-405
    Text: 1N4933G/L - 1 N4937G/L 1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Plastic Material: UL Flammability


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    PDF 1N4933G/L -1N4937G/L MIL-STD-202, DO-41 DO-41 DS27002 1N4937G/L 1N4933 1N4934 1N4935 1N4936 1N4937 A-405

    1N4933

    Abstract: 1N4934 1N4935 1N4936 1N4937
    Text: JGD c :> 1N4933 THRU 1 N4937 .0 AMP. GLASS PASSIVATED FAST RECOVERY RECTIFIERS VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Amperes DO-41 FEATURES T * Low forward voltage drop * High current capability .107 2.7 .080(2.0) DIA. * High reliability 1.0(25.4) MIN.


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    PDF 1N4933 1N4937 34grams DO-41 30/50ns/cm 1N4934 1N4935 1N4936 1N4937

    Untitled

    Abstract: No abstract text available
    Text: JGD 1 N4933G THRU 1 N4937G O 1 .0 AMP. FAST RECOVERY RECTIFIERS VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Amperes DO-41 FEATURES T * Low forward voltage drop * High current capability .107 2.7 .080(2.0) * High reliability 1.0(25.4) MIN. DIA. *l4igh surge current capability


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    PDF N4933G N4937G DO-41 34grams

    1002C

    Abstract: 1N4933GP 1N4937GP N4933G
    Text: S E M IC O N D U C T O R tm 1N4933GP - 1 N4937GP 1.0 m in Features 25.4 D im e n sio n s in • Low forw ard voltage drop. in ch es (m m ) • High surge current capability 0.205 0.160 (5.21) (4.06) 0.107 0.080 (2.72) (2.03) 0.034 0.028 (0.86) (0.71) • High reliability.


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    PDF 1N4933GP -1N4937GP DO-41 N4933GP-1 N4937GP, 1002C 1N4937GP N4933G

    N493

    Abstract: A-405
    Text: 3SKÊ 1N4933/L - 1 N4937/L 1.0A FAST RECOVERY RECTIFIERS /LI T E M I 17I / POWERSEMICONDUCTOR Features Diffused Junction Fast Sw itching for High Efficiency High C urrent C apability and Low Forward Voltage Drop Surge O verload Rating to 30A Peak Low Reverse Leakage C urrent


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    PDF 1N4933/L -1N4937/L MIL-STD-202, DO-41 300ns DS26002 N4933/L-1N4937/L N493 A-405

    N4934

    Abstract: N4935 N4937 N4936
    Text: 1N4933/L-N4937/L Vishay Lite-On Power Semiconductor 1 .OA Fast Recovery Rectifier Features • Diffused junction • Fast sw itching fo r high efficiency • High current capability and low forw ard voltage drop • Surge overload rating to 3 0A peak •


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    PDF 1N4933/L-1N4937/L DO-41 N4933/L N4934/L N4935/L N4936/L N4937/L D-74025 24-Jun-98 N4934 N4935 N4937 N4936

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


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    Untitled

    Abstract: No abstract text available
    Text: • Micnosemi m m Chatsworth, CA a 1N4933 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • th ru N4937 1 Amp Fast Recovery Rectifier 50 - 600 Volts Low Leakage Current Metalurgically Bended Construction


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    PDF 1N4933 1N4937 DO-41 1N4933 1N4934 1N4935 1N4936

    N4937

    Abstract: No abstract text available
    Text: :m ic q n d u c to r T m 1N4933 - N4937 Features 1.0 m in • Low forw a rd voltage drop. 25.4 • High surge current capability. Dimensions in inches (mm) • High reliability. 0.205 (5.21) 0.160 (4.06) • High current capability. COLOR BAND DENOTES CATHODE


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    PDF 1N4933-1N4937 1N4933 1N4937 N4937

    uc3802

    Abstract: 12vdc power supply with uc3842 Andreycak of ic uc3842 zener diodes 13.5v uc3842 power factor UC3842 Volt Regulated power
    Text: DN-65 U IM IT R O D E Design Note Considerations in Powering BiCMOS ICs by Jack Palczynski Bipolar linear integrated circuits have been with us for years in the form of PW M and PFC con­ trollers, supervisory circuits and others. Since these devices have traditionally been built using


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    PDF DN-65 UCC3800/1/2/3/4/5 U-132. UCC3806 U-144 U-149 uc3802 12vdc power supply with uc3842 Andreycak of ic uc3842 zener diodes 13.5v uc3842 power factor UC3842 Volt Regulated power

    2N3816

    Abstract: n4938 2N3815 N4937 TO-89 NPN
    Text: Maximum Ratings T racking Electrical Characteristics @ 25°C One Side Matching VQ£i(Sat) @ Geometry & Character­ ization Applicable Letter m A/m A h FE % V BE in mV A V Be AT -55°C to + 125°C in mV/°C 0.20 0.1/0.01 10 3 10 100 TO-78 G 0.01 0.20 0.1/0.01


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    PDF 2N4854 2N4855 2N3816 n4938 2N3815 N4937 TO-89 NPN