ZVN3320
Abstract: ZVN3320A ZVN3320F WOS78 ZVN3320B 200v 100mA mosfet
Text: bGE D • *n7D57fl DDD7flb7 434 ■ Z E T B _ , ZETEX S E M I C O N D U C T O R S N-channel enhancement mode vertical DMOS FET ZVN3320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability •
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7057fl
ZVN3320
ZVN3320A
ZVN3320B
ZVN3320F
250in
100mA,
100mA
300/is.
ZVN3320
WOS78
200v 100mA mosfet
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 100 V olt VDS * RDS on>= 1 -5 0 * Spice m odel available ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT V VDS 100 Continuous Drain Current a tT amtj=25°C
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0Q1Q354
001G35S
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BCW89
Abstract: BCW89R transistor h6 DS55
Text: SOT23 PIMP SILICON PLANAR SMALL SIGNAL TRANSISTOR BCW89 PARTMARKING DETAILS:EÎCW89 - H3 BCW89R - H6 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage lc = -2mA Emitter-Base Voltage Collector Current
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BCW89
BCW89R
-10mA,
-50mA,
35MHz
transistor h6
DS55
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