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    ITT Interconnect Solutions KPDBF6EN8-2S1

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    ITT Interconnect Solutions KPDBF8EN8-2S1

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    Signetics N82S191F

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    Bristol Electronics N82S191F 30 1
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    Signetics N82S115F

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    Bristol Electronics N82S115F 30 1
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    N82S1 Datasheets (383)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    N82S100I Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S100N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S100N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S101I Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S101N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S101N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S102I Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S102N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S102N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S103I Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S103N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S103N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S104AF Signetics FIELD PROGRAMMABLE LOGIC SEQUENCER (16x48x8) Scan PDF
    N82S104AN Signetics FIELD PROGRAMMABLE LOGIC SEQUENCER (16x48x8) Scan PDF
    N82S104N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S105AF Signetics FIELD PROGRAMMABLE LOGIC SEQUENCER (16x48x8) Scan PDF
    N82S105AN Signetics FIELD PROGRAMMABLE LOGIC SEQUENCER (16x48x8) Scan PDF
    N82S105N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S106F Signetics Field Programmable ROM Patch (16 x 48 x 8) Original PDF
    N82S106G Signetics Field Programmable ROM Patch (16 x 48 x 8) Original PDF
    ...

    N82S1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd marking 25J

    Abstract: WS57C291C-45TI WS57C291C-35TMB MARKING 25J
    Text: WS57C191C/291C HIGH SPEED 2K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 25 ns — t CS = 12 ns • Immune to Latch-UP • Low Power Consumption • Fast Programming


    Original     		PDF WS57C191C/291C Am27S191/291 N82S191 WS57C191C/291C MIL-STD-883C WS57C291C WS57C291C-25S smd marking 25J WS57C291C-45TI WS57C291C-35TMB MARKING 25J

    82S185

    Abstract: 82S184 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185
    Text: FEATURES • Low power dissipation: SO^W/bit typ • Address a cce ss time: N82S184/185: 100ns max S 8 2 S 184/185: 150ns max • Input loading: N82S184/185: -100MA max S82S184/185: -150/iA max • On-chip address decoding • Output options: 82S184: Open collector


    OCR Scan     		PDF 82S184-I 82S185-I 82S184 82S185 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185

    74s* programming

    Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131


    OCR Scan     		PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 74s* programming N82S16 prom 256x4 bit MCM10149 MCM7681C N82HS137

    N82S137F

    Abstract: N82S136 82S137 82S136 N82S136F N82S137 SIGNETICS prom 2.1 connection diagram
    Text: S ig n e tic s Memories - Bipolar Proms N82S136, N82S137 — 4096 Bit Field Programmable Bipolar Prom C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T he 8 2 S 1 3 6 and 8 2 S 1 3 7 are field programmable. The standard 8 2 S 1 3 6 and 8 2 S 1 3 7 are supplied w ith all outputs


    OCR Scan     		PDF N82S136, N82S137 82S136 82S137 N82-S136/137, N82S137F N82S136 N82S136F N82S137 SIGNETICS prom 2.1 connection diagram

    N82S123F

    Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
    Text: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. N82S23/N82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which


    OCR Scan     		PDF N82S23/N82S123 82S23 82S123 N82S123F N82S123N N82S23F 82S123 programming N82S23N SIGNETICS prom signetics 82S123 n82s123

    82s185

    Abstract: No abstract text available
    Text: FEATURES • Low power dissipation: 50/xW/bit typ • Address access time: N82S184/185: 100ns max S82S184/185: 150ns max • Input loading: N82S184/185: -1 0 0 MA max S82S184/185: -150/xA max • On-chip address decoding • Output options: 82S184: Open collector


    OCR Scan     		PDF 82S184 82S185

    smd marking WS

    Abstract: No abstract text available
    Text: WS57C191B/291B MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs Ultra-Fast Access Time — 45 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • Fast Programming


    OCR Scan     		PDF WS57C191B/291B Am27S191/291 N82S191 WS57C191B/291B aD-883C MIL-STD-883C smd marking WS

    2 k bipolar prom

    Abstract: 3A4C
    Text: WS57C191 C/291 C MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — *ACC = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA


    OCR Scan     		PDF WS57C191 C/291 Am27S191/291 N82S191 WS57C191C WS57C191C-35DMB 2 k bipolar prom 3A4C

    82S104

    Abstract: N82S105N ifr 540 82S105 N82S106N N82S107N n82s106 1x48 N82S104N
    Text: Signetics Memories - Bipolar FP LS N82S106, N82S107 Field Pro­ grammable RO M Patch 16 x 48 x 8 Cont. R E FER EN C E T A B L E TYPE NO. STOCK NO. N82S106N N82S107N 56478R 56479G O U T L IN E DRW G. NO. 5 5 IM82S104/105 Field Programmable Logic Sequencer


    OCR Scan     		PDF N82S106, N82S107 N82S106N 56478R N82S107N 56479G N82S106/107 S82S106/1 N82S104/105 82S104 N82S105N ifr 540 82S105 n82s106 1x48 N82S104N

    N82S126F

    Abstract: N82S129N N82S129F N82S126N 82S129 N82S126 itt 129 ane fuse led matrix 32X32 82S126
    Text: S ig n e tic s Memories - Bipolar Proms N82S126, N82S129 - 1024 Bit Field Programmable Bipolar Prom C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP TIO N The 82S 126 and 82S 129 are fie ld program m able, w hich means th a t custom patterns are im m e diately available by


    OCR Scan     		PDF N82S126, N82S129 82S126 82S129 N82S126F N82S129N N82S129F N82S126N N82S126 itt 129 ane fuse led matrix 32X32

    82S215

    Abstract: N82S15N n82s215
    Text: Signetics M em ories - Bipolar Rom N82S15 — 4096 Bit Bipolar Rom 512 x 8 C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N The 8 2 S 2 1 5 includes on-chip decodin g and 2 ch ip enable in­ puts for ease of m em ory expansion. T h e y feature tri-state


    OCR Scan     		PDF N82S15 82S215 N82S15N n82s215

    Untitled

    Abstract: No abstract text available
    Text: WS57C191 C/291 C HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — *ACC = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA


    OCR Scan     		PDF WS57C191 C/291 Am27S191/291 N82S191 WS57C191C/291C S57C191 WS57C291C-45T WS57C291C-45TI WS57C291C-45TMB*

    smd marking 25J

    Abstract: No abstract text available
    Text: WS57C191 C/291 C HIGH SPEED 2K X 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — Ucc = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • ESD Protection Exceeds 2000V


    OCR Scan     		PDF WS57C191 C/291 Am27S191/291 N82S191 MIL-STD-883C MIL-STD-883C smd marking 25J

    WS57C191C55DMB

    Abstract: N82S1
    Text: WS57C191C/291C MILITARY HIGH SPEED 2Kx 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time f ACC = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA


    OCR Scan     		PDF WS57C191C/291C Am27S191/291 N82S191 WS57C191 C/291 MIL-STD-883C MIL-STD-883C WS57C191C55DMB N82S1

    SIGNETICS

    Abstract: N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR MEMORY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131


    OCR Scan     		PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 SIGNETICS N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41

    82S114

    Abstract: N82S114N fet ifr 540 82S214 82S215 N82S114F S82S114F signetics 82S 56306E
    Text: S ig n e tic s Memories - Bipolar Proms C O N N E C T IO N N82S114 - 2048 Bit Field Programmable Bipolar Prom 256 x 8 G E N E R A L D E S C R IP T IO N T h e 8 2 S 1 14 is field program m able and include on-chip decoding and 2 ch ip enable inputs far ease o f m em ory


    OCR Scan     		PDF N82S114 82S114 N82S114N fet ifr 540 82S214 82S215 N82S114F S82S114F signetics 82S 56306E

    N82S141F

    Abstract: 82s141 82S140 N82S140 N82S140F N82S141 S82S140 S82S141 SIGNETICS prom ttl 512 82S141/8708+prom
    Text: Signetics Memories - Bipolar Proms N82S140, N82S141 - 4 0 9 6 Bit Field Programmable Prom 512 x 8 C O N N E C T IO N D IA G R A M 13 G E N E R A L D E SC R IPTIO N The 82S 140 and 82S141 are fie ld program m able. The standard 82S140 and 82S141 are supplied w ith all outputs


    OCR Scan     		PDF N82S140, N82S141 82S140 82S141 N82S140/ N82S141F N82S140 N82S140F S82S140 S82S141 SIGNETICS prom ttl 512 82S141/8708+prom

    25CC

    Abstract: 82S183 N82S183 S82S183 8192-BIT
    Text: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 X 8 82S183 (T.S.) ABSOLUTE MAXIMUM RATINGS PARAMETER Vcc VIN ta Ts t g Supply voltage Input voltage Temperature range Operating N82S183 S82S183 Storage RATING UNIT +7 + 5 .5 Vdc V dc °C 0 to + 7 5


    OCR Scan     		PDF 8192-BIT 1024x8) N82S183 S82S183 N82S183: S82S183: N82S183 S82S183 -18mA 25CC 82S183

    N82S131F

    Abstract: N82S131N 82s131 signetics n82s130 82S130 82S131 N82S130F N82S130N N82S131
    Text: S ig n e tic s Mem ories - Bipolar Prom s N82S130, N82S131 - 2048 Bit Field Programmable Bipolar Prom C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 8 2 S 1 3 0 a nd 8 2 S 1 31 are f ie ld p ro g ra m m a b le , w h ic h m eans th a t c u s to m p a tte rn s are im m e d ia te ly a v a ila b le b y


    OCR Scan     		PDF N82S130, N82S131 82S130 82S131 N82S131F N82S131N 82s131 signetics n82s130 N82S130F N82S130N

    82S112

    Abstract: 82S12 N82S112
    Text: S ig n e tic s Memories - Bipolar SAM N82S12, N82S112 - 32 Bit Bipolar Multi- port Memory 8 x 4 G E N E R A L D E S C R IP TIO N Data is stored in a single storage m a trix w hich is add­ ressed via 2 independent sets o f address in puts, designated respectively as P ort A and P o rt B.


    OCR Scan     		PDF N82S12, N82S112 82S112 82S12

    S8251

    Abstract: 82S11 56267R signetics 82S1 82S10 82S111 N82S10 A4T10 N82S11F
    Text: Signetics Memories - Bipolar Ram N82S10, N82S110, 82S11, 82S111 — 1024 Bit Bipolar Ram C O N N E C TIO N D IA G R A M G E N E R A L D E SC R IPTIO N The 8 2 S 1 0 /1 1, w ith a typ ic a l access tim e o f 30ns, is ideal fo r cache b u ffe r app lica tions and fo r systems requiring very


    OCR Scan     		PDF N82S10, N82S110, 82S11, 82S111 82S10/11, 82S10/11 N82S10/110/11/111. 82S10 82S11 S8251 56267R signetics 82S1 N82S10 A4T10 N82S11F

    82S191

    Abstract: N82S191F 82s141 N82S191 signetics 82S1 SIGNETICS prom 82S140 82S190 N82S190F Signetics 82S191
    Text: S ig n e tic s Memories - BiPolar Proms N82S190, N82S191 -1 3384 Bit Field Programmable BiPolar Prom C O N N E C T IO N D IA G R A M A id G E N E R A L D E S C R IP T IO N The 8 2 S 1 9 0 and 8 2 S 1 9 1 are field program m able, w hich means that cu stom patterns are im m ediately available by


    OCR Scan     		PDF N82S190, N82S191 82S190 82S191 N82S191F 82s141 signetics 82S1 SIGNETICS prom 82S140 N82S190F Signetics 82S191

    35P marking

    Abstract: No abstract text available
    Text: WS57C191 C/291 C HIGH SPEED 2Kx 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — tAc c = 25 ns — tCs = 12 ns • Immune to Latch-UP • Low Power Consumption • Fast Programming


    OCR Scan     		PDF WS57C191 C/291 Am27S191/291 N82S191 MIL-STD-883C 35P marking

    RF wafer 15w

    Abstract: No abstract text available
    Text: WAFER SCALE INTEGRATION DeT | clS3cÌ b ciO QOGDISM 7 % Æ Æ ~ÎË WS57C191B/291B PRELIMINARY WAFERSCALE INTEGRATION, INC. HIGH SPEED 2K x 8 CMQS RPROM KEY FEATURES Ultra-Fast Access Time . Low Power Consumption Pin Compatible with AM27S191/291 and N82S191 Bipolar PROMs


    OCR Scan     		PDF WS57C191B/291B AM27S191/291 N82S191 WS57C191B/291B WS57Ck 7B/21; WS57C191B-35D WS57C291B-35T WS57C191B-45CMB WS57C191B-45D RF wafer 15w