N82S321 Search Results

BIPOLAR PROM PROGRAMMING SPECIFICATION

Contextual Info: WA F E R SCALE INTEGRATION 3 C E ^SBTb^O D 00QGS2Ü b IÜIAF Vl^S57C43C ADVANCE INFORMATION WAFERSCALE INTEGRATION, INC. T - ' V ß - T P i HIGH SPEED 4K x 8 CMOS PROM/RPROM KEY FEATURES Pin Com patible with AM27S43 and N82S321 Bipolar PROMs • Ultra-Fast Access Time

Contextual Info: WS57C43B HIGH SPEED 4K x 8 CMOS PROM/RPROM K E Y FEA TU R E S • U ltra-Fast A ccess Tim e • Pin C om patible with A m 27S 43 and N82S321 B ipolar P RO M s — 35 ns • Low Pow er C onsum ption Im m u ne to Latch-U p • Fast Program m ing — Up to 200 mA

57c43b

Abstract: 57c43b-35 57C43B-70 WS57C43B-45T
Contextual Info: WS57C43B HIGH SPEED 4Kx 8 CMOS PROM/RPROM FOR M AIN T E N A N C E PU R PO SES ONLY! N O T TO BE USED FOR N E W DESIGNS. SEE WS57C43C FOR N E W VERSION' KEY FEATURES • Ultra-Fast Access Time — • Pin Compatible with Am27S43 and N82S321 Bipolar PROMs 35 ns

Contextual Info: WAFER SCALE INTEGRATION ^ DE I TSBTlnTG □□□□Ibfc. 3 § -§ J T b WS57C43B WAFERSCALE INTEGRA HON, INC. PRELIMINARY HIGH SPEED 4K x 8 CMOS RPROM i KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with AM27S43 and N82S321 Bipolar PROMs • Immune to Latch-Up

57c43b

Abstract: 57c43b-35 57C43B-45 N82S321 WS57C43B-35 WS57C43B-45 WS57C43B-55 WS57C43B-70 WS57C43C AM27S43
Contextual Info: WS57C43B HIGH SPEED 4K x 8 CMOS PROM/RPROM FOR MAINTENANCE PURPOSES ONLY! NOT TO BE USED FOR NEW DESIGNS. SEE WS57C43C FOR NEW VERSION! KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S43 and N82S321 Bipolar PROMs — 35 ns • Low Power Consumption

57c43b

Contextual Info: WS57C43B HIGH SPEED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time - • Pin Compatible with AM27S43 and N82S321 Bipolar PROMs 35 ns . Low Power Consumption * 'mmune to Latch-Up • Fast Programming • Available in 300 Mil Dip r — Up to 200 mA

WSI eprom Programming algorithm

Contextual Info: ^ALE W AFFR INTEGRATION 99D 0 0 136 DT-Í/6-/3-Z5 WS57C43B ADVANCE INFORMATION WAFER WAFERSCALE INTEGRATION, INC 4K X 8 CMOS PROM SCALE KEY FEATURES Low Power Consumption — 300 mW Active Power 20 MHz — Up to 200 mA Fast Programming • Available in 300 Mil Dip

57c43b-35

Abstract: 57C43B ajo3
Contextual Info: WAFER SCALE INTEGRATION V iU 31E D Oi ci 5 3 eJkl1D ODOOSIM □ EllilAF ijJ j_f _ W S57C 43B q ^ -p WAFERSCALE IN TEGRATION, INC. H IG H S P E E D 4 K x 8 C M O S P R O M /R P R O M KEY FEATURES • Low Power Consumption

MB7142H

Abstract: 82S321 intel i5 27S43A 63S3281 63S3281A 82HS321 82HS321A 82HS321B 82HS321C
Contextual Info: - 3632 X m -í y f- y ÏS&ÏEB z, l± « CC TAAC max ns) TCAC max (ns) 30 TOH max (ns) ^ ft tt TOE max (ns) € ii TOD max (ns) V D D or V C C 30 4.75— 5.25 (V) (Ta=25’ C) a -h /m VIL max (V) iti £ i h : 150 190 0. 25/0. 4 0.8 0.04/5.25 2.0 0. 25/0. 4

6301-1 prom

Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im ­ m e d ia te ly a va ila b le by fo llo w in g th e fu s in g

N82S191

Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate­ ly available by following the fusing proce­ dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.

N82S141

Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ­ ly available by fo llo w in g th e fu sin g p roce ­

82S321

Abstract: N82S321 S82S321 AJT20 20EL
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 82S321 T.S. 32,768-BIT BIPOLAR PROM (4096x8) Preliminary DESCRIPTION The 82S321 is field programmable, which means that custom patterns are immediate­ ly available by following the fusing proce­ dure given in this data manual. The 82S321

N82S181

Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.