NAND512W3A2C
Abstract: VFBGA63 ST MICROELECTRONICS FBGA63 NAND512R3A2C NAND512R4A2C NAND512W4A2C NAND512W3A2
Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
NAND512W4A2C
Byte/264
TSOP48
VFBGA55
VFBGA63
ST MICROELECTRONICS
FBGA63
NAND512R4A2C
NAND512W4A2C
NAND512W3A2
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64GB Nand flash
Abstract: SpecTek flash spectek 64gb micron nand flash chip 64gb spectek nand SpecTek 64Gb flash 64GB Nand flash MLC memory Micron NAND flash 32gb nand ONFI 3.0 64gb NAND chip
Text: 16Gb, 32Gb, 64Gb NAND Flash Memory Features NAND Flash Memory FxxL52A 8Gb, 16Gb, 32Gb, 64Gb 1.8V, 3.3V Features Figure 1: 48-Pin TSOP Type 1 • Open NAND Flash Interface ONFI 1.0 compliant • Multilevel cell (MLC) technology • Organization – Page size: x8: 4,314 bytes (4,096 + 218 bytes)
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FxxL52A
48-Pin
12-bit
09005aef82f114cf/Source:
09005aef82f11fd1
64GB Nand flash
SpecTek flash
spectek 64gb
micron nand flash chip 64gb
spectek nand
SpecTek 64Gb flash
64GB Nand flash MLC memory
Micron NAND flash 32gb
nand ONFI 3.0
64gb NAND chip
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NAND02GW3B2C
Abstract: VFBGA63 ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G
Text: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Features • ■ High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width
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NAND01G-B2B
NAND02G-B2C
Byte/1056
TSOP48
VFBGA63
NAND02GW3B2C
ST 2gbit NAND
NAND02GR4B2C
NAND01G-B2B
NAND01GW3B2B
NAND01Gr4B2B
NAND01GR3B2B
NAND02G-B2C
NAND01G
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TC58NYM9S3ETA00
Abstract: No abstract text available
Text: TC58NYM9S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NYM9S3ETA00
TC58NYM9S3E
512Mbit
128bits)
512blocks.
2112-byte
011-03-01A
TC58NYM9S3ETA00
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TC58NYM9S3ETAI0
Abstract: No abstract text available
Text: TC58NYM9S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NYM9S3ETAI0
TC58NYM9S3E
512Mbit
128bits)
512blocks.
2112-byte
011-03-01A
TC58NYM9S3ETAI0
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Untitled
Abstract: No abstract text available
Text: TC58NYM9S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.
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TC58NYM9S3ETA00
TC58NYM9S3E
512Mbit
128bits)
512blocks.
2112-byte
011-03-01A
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TC58NYG0S3E
Abstract: TC58NYG0S3ETA00 TC58NYG0S
Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
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TC58NYG0S3ETA00
TC58NYG0S3E
1024blocks.
2112-byte
2011-03-01C
TC58NYG0S3ETA00
TC58NYG0S
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TC58NYG1S3ETA00
Abstract: TC58NYG1 TC58NYG1S3
Text: TC58NYG1S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.
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TC58NYG1S3ETA00
TC58NYG1S3E
2048blocks.
2112-byte
2011-03-01C
TC58NYG1S3ETA00
TC58NYG1
TC58NYG1S3
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TC58NVG2S3
Abstract: TC58NYG2S3ETA00 TC58NVG2S3ET tc58nvg2s TC58NYG2S3E tc58nvg tc58nvg2 tc58nvg2s3e
Text: TC58NYG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.
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TC58NYG2S3ETA00
TC58NYG2S3E
4096blocks.
2112-byte
2010-07-13C
TC58NVG2S3
TC58NYG2S3ETA00
TC58NVG2S3ET
tc58nvg2s
tc58nvg
tc58nvg2
tc58nvg2s3e
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TC58NYG1S3ETAI0
Abstract: 103A15
Text: TC58NYG1S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.
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TC58NYG1S3ETAI0
TC58NYG1S3E
2048blocks.
2112-byte
2011-03-01C
TC58NYG1S3ETAI0
103A15
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TC58NYG0S3ETAI0
Abstract: TC58NYG0S
Text: TC58NYG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
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TC58NYG0S3ETAI0
TC58NYG0S3E
1024blocks.
2112-byte
2011-03-01C
TC58NYG0S3ETAI0
TC58NYG0S
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TC58NYG2S3ETAI0
Abstract: toshiba NAND ID code
Text: TC58NYG2S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.
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TC58NYG2S3ETAI0
TC58NYG2S3E
4096blocks.
2112-byte
2010-07-13C
TC58NYG2S3ETAI0
toshiba NAND ID code
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MT29F32G08ABAAA
Abstract: MT29F32G08ABAAAWP MT29F32G08ABAAAWP-I mt29f32g08aba MT29F32G08 MT29F32G08A MT29F32G MT29F32G08ab
Text: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa Chill Em1ble: Single Component Density: 32Gb Depth: 4Gb Fall: Micron Family: NAND Flash Flash Vohage: 1.8V Generation (primary : First
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48-pin
Exterm11:
3216411281256Gb
MT29F32G08ABAAAWP-I
MT29F32G08ABAAA
MT29F32G08ABAAAWP
mt29f32g08aba
MT29F32G08
MT29F32G08A
MT29F32G
MT29F32G08ab
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Untitled
Abstract: No abstract text available
Text: ESMT F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit 512M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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F59D4G81A
250us
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MT29F4G08ABAEAWP
Abstract: MT29F4G08ABAEA mt29f4g08ABAE MT29F4G08ABA MT29F4G08AB MICRON NAND sLC lexar
Text: Specifications Data Sheets B~s/Cell: ~ 4Gb: x8 X16 NAND Flash M70M ~ Rev. Date: 0212012, File Size: 1.19MB SLC Brand: Micron Bus Wi<hh: xa CE Chill Count: 1 Chill Enable: Single Component Density: 4Gb Fall: Micron Family: NAND Flash Flash Vohage: 1.8V Generation primaly : First
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48-pin
Exterm11:
MT29F4G08ABAEAWP
MT29F4G08ABAEA
mt29f4g08ABAE
MT29F4G08ABA
MT29F4G08AB
MICRON NAND sLC
lexar
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Untitled
Abstract: No abstract text available
Text: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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F59D2G81A
250us
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85X15
Abstract: 63FBGA hynix nand hynix nand spare area bad block HY27 hynix hy27 hynix nand 1G hynix nand flash HY27U
Text: HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary 0.1 1) Add 1.8V Operation Product to Data sheet
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HY27UA
HY27SA
128Mx8bit
64Mx16bit)
85X15
63FBGA
hynix nand
hynix nand spare area
bad block
HY27
hynix hy27
hynix nand 1G
hynix nand flash
HY27U
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Esmt
Abstract: F59D2G81A
Text: ESMT Preliminary F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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F59D2G81A
4bit/512Byte
Esmt
F59D2G81A
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VFBGA63
Abstract: VFBGA error free nand STMicroelectronics NAND256W3A FLASH 512Mb 1.8V VFBGA63 VFBGA-63 serial flash 256Mb fast erase nand TSOP48 NAND128R4A NAND128W3A
Text: NAND FLASH 528 Byte, 264 Word Page Family 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 1.8V, 3V Supply Flash Memories DATA BRIEFING FEATURES SUMMARY • HIGH DENSITY NAND FLASH MEMORIES Figure 1. Packages – Up to 1 Gbit memory array – Up to 32Mbit spare area
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x8/x16)
32Mbit
TSOP48
VFBGA63
5x15x1
TFBGA63
9x11x1
VFBGA
error free nand
STMicroelectronics NAND256W3A
FLASH 512Mb 1.8V VFBGA63
VFBGA-63
serial flash 256Mb fast erase
nand TSOP48
NAND128R4A
NAND128W3A
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VFBGA63
Abstract: NAND01GW3B NAND01GW4B NAND01G-B NAND01GR3B NAND01GR4B NAND02G-B FBGA63 NAND02GR3B2A st nand
Text: NAND01G-B NAND02G-B 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Feature summary ● ● ● ● ● ● ● High Density NAND Flash memories – Up to 2 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass
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NAND01G-B
NAND02G-B
Byte/1056
64Mbit
VFBGA63
TFBGA63
TSOP48
NAND01GW3B
NAND01GW4B
NAND01G-B
NAND01GR3B
NAND01GR4B
NAND02G-B
FBGA63
NAND02GR3B2A
st nand
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WSOP48
Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 NAND01GR
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
WSOP48
NAND01G-A
NAND128-A
NAND256-A
NAND512-A
VFBGA63
NAND01GR
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NAND FLASH BGA
Abstract: nand flash 128mbit VFBGA63 WSOP48 NAND01G-A NAND128-A NAND128R3A NAND256-A NAND512-A NAND256A
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
NAND FLASH BGA
nand flash 128mbit
VFBGA63
WSOP48
NAND01G-A
NAND128-A
NAND128R3A
NAND256-A
NAND512-A
NAND256A
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F59D4G81A
Abstract: No abstract text available
Text: ESMT Preliminary F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit
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F59D4G81A
4bit/512Byte
F59D4G81A
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Untitled
Abstract: No abstract text available
Text: ESM T Preliminary F59D4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit
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F59D4G81A
250us
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