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    NAND 1.8V TSOP Search Results

    NAND 1.8V TSOP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    MC2101F Rochester Electronics LLC MC2101F - Dual NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    54HC133J/B Rochester Electronics LLC 54HC133 - 13 Input NAND Gate Visit Rochester Electronics LLC Buy

    NAND 1.8V TSOP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NAND512W3A2C

    Abstract: VFBGA63 ST MICROELECTRONICS FBGA63 NAND512R3A2C NAND512R4A2C NAND512W4A2C NAND512W3A2
    Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface


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    NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C Byte/264 TSOP48 VFBGA55 VFBGA63 ST MICROELECTRONICS FBGA63 NAND512R4A2C NAND512W4A2C NAND512W3A2 PDF

    64GB Nand flash

    Abstract: SpecTek flash spectek 64gb micron nand flash chip 64gb spectek nand SpecTek 64Gb flash 64GB Nand flash MLC memory Micron NAND flash 32gb nand ONFI 3.0 64gb NAND chip
    Text: 16Gb, 32Gb, 64Gb NAND Flash Memory Features NAND Flash Memory FxxL52A 8Gb, 16Gb, 32Gb, 64Gb 1.8V, 3.3V Features Figure 1: 48-Pin TSOP Type 1 • Open NAND Flash Interface ONFI 1.0 compliant • Multilevel cell (MLC) technology • Organization – Page size: x8: 4,314 bytes (4,096 + 218 bytes)


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    FxxL52A 48-Pin 12-bit 09005aef82f114cf/Source: 09005aef82f11fd1 64GB Nand flash SpecTek flash spectek 64gb micron nand flash chip 64gb spectek nand SpecTek 64Gb flash 64GB Nand flash MLC memory Micron NAND flash 32gb nand ONFI 3.0 64gb NAND chip PDF

    NAND02GW3B2C

    Abstract: VFBGA63 ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G
    Text: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Features • ■ High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width


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    NAND01G-B2B NAND02G-B2C Byte/1056 TSOP48 VFBGA63 NAND02GW3B2C ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G PDF

    TC58NYM9S3ETA00

    Abstract: No abstract text available
    Text: TC58NYM9S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.


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    TC58NYM9S3ETA00 TC58NYM9S3E 512Mbit 128bits) 512blocks. 2112-byte 011-03-01A TC58NYM9S3ETA00 PDF

    TC58NYM9S3ETAI0

    Abstract: No abstract text available
    Text: TC58NYM9S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.


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    TC58NYM9S3ETAI0 TC58NYM9S3E 512Mbit 128bits) 512blocks. 2112-byte 011-03-01A TC58NYM9S3ETAI0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NYM9S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.


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    TC58NYM9S3ETA00 TC58NYM9S3E 512Mbit 128bits) 512blocks. 2112-byte 011-03-01A PDF

    TC58NYG0S3E

    Abstract: TC58NYG0S3ETA00 TC58NYG0S
    Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


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    TC58NYG0S3ETA00 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETA00 TC58NYG0S PDF

    TC58NYG1S3ETA00

    Abstract: TC58NYG1 TC58NYG1S3
    Text: TC58NYG1S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


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    TC58NYG1S3ETA00 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C TC58NYG1S3ETA00 TC58NYG1 TC58NYG1S3 PDF

    TC58NVG2S3

    Abstract: TC58NYG2S3ETA00 TC58NVG2S3ET tc58nvg2s TC58NYG2S3E tc58nvg tc58nvg2 tc58nvg2s3e
    Text: TC58NYG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.


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    TC58NYG2S3ETA00 TC58NYG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NVG2S3 TC58NYG2S3ETA00 TC58NVG2S3ET tc58nvg2s tc58nvg tc58nvg2 tc58nvg2s3e PDF

    TC58NYG1S3ETAI0

    Abstract: 103A15
    Text: TC58NYG1S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


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    TC58NYG1S3ETAI0 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C TC58NYG1S3ETAI0 103A15 PDF

    TC58NYG0S3ETAI0

    Abstract: TC58NYG0S
    Text: TC58NYG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


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    TC58NYG0S3ETAI0 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETAI0 TC58NYG0S PDF

    TC58NYG2S3ETAI0

    Abstract: toshiba NAND ID code
    Text: TC58NYG2S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.


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    TC58NYG2S3ETAI0 TC58NYG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NYG2S3ETAI0 toshiba NAND ID code PDF

    MT29F32G08ABAAA

    Abstract: MT29F32G08ABAAAWP MT29F32G08ABAAAWP-I mt29f32g08aba MT29F32G08 MT29F32G08A MT29F32G MT29F32G08ab
    Text: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa Chill Em1ble: Single Component Density: 32Gb Depth: 4Gb Fall: Micron Family: NAND Flash Flash Vohage: 1.8V Generation (primary : First


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    48-pin Exterm11: 3216411281256Gb MT29F32G08ABAAAWP-I MT29F32G08ABAAA MT29F32G08ABAAAWP mt29f32g08aba MT29F32G08 MT29F32G08A MT29F32G MT29F32G08ab PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit 512M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


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    F59D4G81A 250us PDF

    MT29F4G08ABAEAWP

    Abstract: MT29F4G08ABAEA mt29f4g08ABAE MT29F4G08ABA MT29F4G08AB MICRON NAND sLC lexar
    Text: Specifications Data Sheets B~s/Cell: ~ 4Gb: x8 X16 NAND Flash M70M ~ Rev. Date: 0212012, File Size: 1.19MB SLC Brand: Micron Bus Wi<hh: xa CE Chill Count: 1 Chill Enable: Single Component Density: 4Gb Fall: Micron Family: NAND Flash Flash Vohage: 1.8V Generation primaly : First


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    48-pin Exterm11: MT29F4G08ABAEAWP MT29F4G08ABAEA mt29f4g08ABAE MT29F4G08ABA MT29F4G08AB MICRON NAND sLC lexar PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


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    F59D2G81A 250us PDF

    85X15

    Abstract: 63FBGA hynix nand hynix nand spare area bad block HY27 hynix hy27 hynix nand 1G hynix nand flash HY27U
    Text: HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary 0.1 1) Add 1.8V Operation Product to Data sheet


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    HY27UA HY27SA 128Mx8bit 64Mx16bit) 85X15 63FBGA hynix nand hynix nand spare area bad block HY27 hynix hy27 hynix nand 1G hynix nand flash HY27U PDF

    Esmt

    Abstract: F59D2G81A
    Text: ESMT Preliminary F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


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    F59D2G81A 4bit/512Byte Esmt F59D2G81A PDF

    VFBGA63

    Abstract: VFBGA error free nand STMicroelectronics NAND256W3A FLASH 512Mb 1.8V VFBGA63 VFBGA-63 serial flash 256Mb fast erase nand TSOP48 NAND128R4A NAND128W3A
    Text: NAND FLASH 528 Byte, 264 Word Page Family 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 1.8V, 3V Supply Flash Memories DATA BRIEFING FEATURES SUMMARY • HIGH DENSITY NAND FLASH MEMORIES Figure 1. Packages – Up to 1 Gbit memory array – Up to 32Mbit spare area


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    x8/x16) 32Mbit TSOP48 VFBGA63 5x15x1 TFBGA63 9x11x1 VFBGA error free nand STMicroelectronics NAND256W3A FLASH 512Mb 1.8V VFBGA63 VFBGA-63 serial flash 256Mb fast erase nand TSOP48 NAND128R4A NAND128W3A PDF

    VFBGA63

    Abstract: NAND01GW3B NAND01GW4B NAND01G-B NAND01GR3B NAND01GR4B NAND02G-B FBGA63 NAND02GR3B2A st nand
    Text: NAND01G-B NAND02G-B 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Feature summary ● ● ● ● ● ● ● High Density NAND Flash memories – Up to 2 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass


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    NAND01G-B NAND02G-B Byte/1056 64Mbit VFBGA63 TFBGA63 TSOP48 NAND01GW3B NAND01GW4B NAND01G-B NAND01GR3B NAND01GR4B NAND02G-B FBGA63 NAND02GR3B2A st nand PDF

    WSOP48

    Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 NAND01GR
    Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES


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    NAND128-A, NAND256-A NAND512-A, NAND01G-A x8/x16) Byte/264 WSOP48 NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 NAND01GR PDF

    NAND FLASH BGA

    Abstract: nand flash 128mbit VFBGA63 WSOP48 NAND01G-A NAND128-A NAND128R3A NAND256-A NAND512-A NAND256A
    Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES


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    NAND128-A, NAND256-A NAND512-A, NAND01G-A x8/x16) Byte/264 NAND FLASH BGA nand flash 128mbit VFBGA63 WSOP48 NAND01G-A NAND128-A NAND128R3A NAND256-A NAND512-A NAND256A PDF

    F59D4G81A

    Abstract: No abstract text available
    Text: ESMT Preliminary F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES         Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit


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    F59D4G81A 4bit/512Byte F59D4G81A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T Preliminary F59D4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES         Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit


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    F59D4G81A 250us PDF