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    Micron Technology Inc NAND01GR3B2CZA6E

    IC FLASH 1GBIT PARALLEL 63VFBGA
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    Micron Technology Inc NAND01GR3B2BZA6E

    IC FLASH 1GBIT PARALLEL 63VFBGA
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    STMicroelectronics NAND01GR3B2CZA6

    Electronic Component
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    ComSIT USA NAND01GR3B2CZA6 99
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    Others NAND01GR3B2CZA6F

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    NAND01GR Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NAND01GR3A STMicroelectronics STPC VEGA PRODUCT BRIEF / X86 CORE PC COMPATIBLE SOC WITH ETHERNET AND USB Original PDF
    NAND01GR3A0AN1 STMicroelectronics Original PDF
    NAND01GR3A0AN1E STMicroelectronics IC FLASH MEM PARL 1.7V TO 1.9V 1GBIT 128MX8 12000NS 48TSOP Original PDF
    NAND01GR3A0AN6 STMicroelectronics Original PDF
    NAND01GR3A0AV1 STMicroelectronics Original PDF
    NAND01GR3A0AV6 STMicroelectronics Original PDF
    NAND01GR3A0AZA1 STMicroelectronics Original PDF
    NAND01GR3A0AZA6 STMicroelectronics Original PDF
    NAND01GR3A0AZB1 STMicroelectronics Original PDF
    NAND01GR3A0AZB6 STMicroelectronics Original PDF
    NAND01GR3A2AN1 STMicroelectronics Original PDF
    NAND01GR3A2AN6 STMicroelectronics Original PDF
    NAND01GR3A2AV1 STMicroelectronics Original PDF
    NAND01GR3A2AV6 STMicroelectronics Original PDF
    NAND01GR3A2AZA1 STMicroelectronics Original PDF
    NAND01GR3A2AZA6 STMicroelectronics Original PDF
    NAND01GR3A2AZB1 STMicroelectronics Original PDF
    NAND01GR3A2AZB6 STMicroelectronics Original PDF
    NAND01GR3B STMicroelectronics 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Original PDF
    NAND01GR3B2B STMicroelectronics 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Original PDF

    NAND01GR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Preliminary Data Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities


    Original     		NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 2112-byte/1056-word PDF

    NAND01GW3B2C

    Abstract: NAND01GR3b2c nand01gw3b2cza6
    Text: NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities


    Original     		NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 2112-byte/1056-word nand01gw3b2cza6 PDF

    VFBGA153

    Abstract: NAND01G-B2C NAND01GW3B2C nand flash ONFI 3.0 NAND01GR3b2c ONFI 3.0 strataflash reliability NAND01G
    Text: NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities


    Original     		NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 2112-byte/1056-word VFBGA153 NAND01G-B2C nand flash ONFI 3.0 ONFI 3.0 strataflash reliability NAND01G PDF

    STMicroelectronics NAND256W3A

    Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48
    Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array


    Original     		NAND128-A, NAND256-A NAND512-A, NAND01G-A x8/x16) Byte/264 STMicroelectronics NAND256W3A NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48 PDF

    NAND02GW3B2C

    Abstract: VFBGA63 ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G
    Text: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Features • ■ High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width


    Original     		NAND01G-B2B NAND02G-B2C Byte/1056 TSOP48 VFBGA63 NAND02GW3B2C ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G PDF

    VFBGA63

    Abstract: NAND02GW3B2C NAND01G-B2B NAND01GR3B2B NAND01GR4B2B NAND01GW3B2B NAND02G-B2C NAND01G cache program
    Text: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 byte/1056 word page, 1.8 V/3 V, NAND Flash memory Features • High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications ■ NAND interface – x8 or x16 bus width


    Original     		NAND01G-B2B NAND02G-B2C byte/1056 TSOP48 VFBGA63 NAND02GW3B2C NAND01G-B2B NAND01GR3B2B NAND01GR4B2B NAND01GW3B2B NAND02G-B2C NAND01G cache program PDF

    NAND02GW3B2C

    Abstract: VFBGA63 NAND01GW3B2B VFBGA-63 block code error management, verilog NAND01GR3B2B NAND01Gr4B2B NAND02GR4B2C Numonyx NAND01G-B2B
    Text: NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, SLC NAND flash memories Not For New Design Features • High density SLC NAND flash memories – Up to 2 Gbits of memory array – Cost effective solutions for mass storage applications


    Original     		NAND01G-B2B NAND02G-B2C 2112-byte/1056-word TSOP48 NAND02GW3B2C VFBGA63 NAND01GW3B2B VFBGA-63 block code error management, verilog NAND01GR3B2B NAND01Gr4B2B NAND02GR4B2C Numonyx NAND01G-B2B PDF

    NAND01GW3B2C

    Abstract: NAND01GW3B2B nand01gw3b2cza6
    Text: NAND01G-B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory Preliminary Data Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3.0 V ■ Page size


    Original     		NAND01G-B2C 2112-byte/1056-word NAND01GW3B2C NAND01GW3B2B nand01gw3b2cza6 PDF

    VFBGA63

    Abstract: NAND01GW3B NAND01GW4B NAND01G-B NAND01GR3B NAND01GR4B NAND02G-B FBGA63 NAND02GR3B2A st nand
    Text: NAND01G-B NAND02G-B 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Feature summary ● ● ● ● ● ● ● High Density NAND Flash memories – Up to 2 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass


    Original     		NAND01G-B NAND02G-B Byte/1056 64Mbit VFBGA63 TFBGA63 TSOP48 NAND01GW3B NAND01GW4B NAND01G-B NAND01GR3B NAND01GR4B NAND02G-B FBGA63 NAND02GR3B2A st nand PDF

    STn8800

    Abstract: STN*8800 AN1764 fsmc NOMADIK SMAD16 NAND128R3A NAND128W3A NAND128W4A NAND256R4A
    Text: AN1764 APPLICATION NOTE How to Connect NAND Flash Memories to a Nomadik Multimedia Application Processor CONTENTS This Application Note describes how to connect an STMicroelectronics NAND Flash memory to the ST Nomadik Multimedia Platform. It considers the Memory Interface and the Boot


    Original     		AN1764 c1764 STn8800 STN*8800 AN1764 fsmc NOMADIK SMAD16 NAND128R3A NAND128W3A NAND128W4A NAND256R4A PDF

    "NAND Flash"

    Abstract: AN1793 NAND01GR3B NAND01GR4B NAND01GW3B NAND01GW4B NAND02GR3B NAND512W3B ST nand
    Text: AN1793 APPLICATION NOTE How to Use the Chip Enable Don’t Care Option in Single Level Cell NAND Flash Memories This Application Note describes how to use the Chip Enable Don’t Care feature, which is available in both the NANDxxx-A and NANDxxx-B families of Single Level Cell SLC NAND Flash memories, and outlines


    Original     		AN1793 128Mbits 25thout "NAND Flash" AN1793 NAND01GR3B NAND01GR4B NAND01GW3B NAND01GW4B NAND02GR3B NAND512W3B ST nand PDF

    AN1727

    Abstract: cache controller NAND128R3A NAND128R4A NAND128W3A NAND128W4A NAND256R3A NAND256R4A NAND256W3A NAND256W4A
    Text: AN1727 APPLICATION NOTE How to Use the Cache Program Feature of NAND Flash Memories ST NAND Flash memories feature a Cache Program command that uses a Cache Register to improve the programming throughput when multiple page program operations are required within the same block.


    Original     		AN1727 NAND128R3A NAND128W3A NAND512W3A NAND128R4A NAND512R4A NAND128W4A NAND512W4A NAND256R3A NAND01GR3A AN1727 cache controller NAND128R3A NAND128R4A NAND128W3A NAND128W4A NAND256R3A NAND256R4A NAND256W3A NAND256W4A PDF

    STMicroelectronics NAND256W3A

    Abstract: NAND FLASH TRANSLATION LAYER FTL AN1820 AN1822 "flash translation layer" AN1821 Flash Translation Layer an1823 NAND512-A NAND01G-A
    Text: AN1821 APPLICATION NOTE Garbage Collection in NAND Flash Memories This Application Note describes the Garbage Collection algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION The Flash Translation Layer is an additional software layer between the File System and the NAND Flash


    Original     		AN1821 STMicroelectronics NAND256W3A NAND FLASH TRANSLATION LAYER FTL AN1820 AN1822 "flash translation layer" AN1821 Flash Translation Layer an1823 NAND512-A NAND01G-A PDF

    NAND512W3A 64MB

    Abstract: STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B
    Text: NAND Flash memories The core element of a compact audio-player is a NAND Flash, smaller than a stamp, which is capable of storing hours of audio files Because NAND Flash offers higher densities and performances at lower cost, it is ideal for multimedia system


    Original     		FLNANDF0106 NAND512W3A 64MB STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B PDF

    verilog code hamming

    Abstract: c1823.zip an1823 hamming code 512 bytes SLC nand hamming code 512 bytes flash hamming ecc STMicroelectronics NAND256W3A hamming 7 bit hamming code error correction code
    Text: AN1823 APPLICATION NOTE Error Correction Code in Single Level Cell NAND Flash Memories This Application Note describes how to implement an Error Correction Code ECC in ST Single Level Cell (SLC) NAND Flash memories, that can detect 2-bit errors and correct 1-bit errors per 256 or 512 Bytes.


    Original     		AN1823 Byte/1056 verilog code hamming c1823.zip an1823 hamming code 512 bytes SLC nand hamming code 512 bytes flash hamming ecc STMicroelectronics NAND256W3A hamming 7 bit hamming code error correction code PDF

    E2 nand flash

    Abstract: st nand flash application note NAND512R4A NAND512W3A NAND256W3A NAND512W3B AN1759 NAND128R3A NAND128R4A NAND128W3A
    Text: AN1759 APPLICATION NOTE How to Connect Single Level Cell NAND Flash Memories to Build Storage Modules This application note explains how to connect two or more Single Level Cell NAND Flash memories to a microcontroller system bus, to build storage modules.


    Original     		AN1759 NAND128R3A NAND256R3A NAND512R3A NAND01GR3A NAND128W3A NAND256W3A NAND512W3A NAND01GW3A NAND128R4A E2 nand flash st nand flash application note NAND512R4A NAND512W3A NAND256W3A NAND512W3B AN1759 NAND128R3A NAND128R4A NAND128W3A PDF

    NAND FLASH TRANSLATION LAYER FTL

    Abstract: "flash translation layer" Flash Translation Layer NAND02GW3B NAND02GW4B Wear Leveling in Single Level Cell NAND Flash Memory AN1821 NAND512R3B NAND512W3B AN1820
    Text: AN1821 APPLICATION NOTE Garbage Collection in Single Level Cell NAND Flash Memories This Application Note describes the Garbage Collection algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION


    Original     		AN1821 NAND FLASH TRANSLATION LAYER FTL "flash translation layer" Flash Translation Layer NAND02GW3B NAND02GW4B Wear Leveling in Single Level Cell NAND Flash Memory AN1821 NAND512R3B NAND512W3B AN1820 PDF

    samsung evaluator 7t

    Abstract: RS-486 Header 19x2 AN1758 NAND128R3A NAND128R4A NAND128W3A NAND128W4A schematics nand flash controller NAND256R4A
    Text: AN1758 APPLICATION NOTE How to Connect a Small Page NAND Flash Memory to an ARM7TDMI Core Based Microcontroller This Application Note describes how to drive an STMicroelectronics Small Page 528 Byte/264 Word Page NAND Flash memory with an ARM7TDMI core based microcontroller that does not have an embedded NAND controller. It considers both the hardware and software, which have been evaluated on the


    Original     		AN1758 Byte/264 128Mbits samsung evaluator 7t RS-486 Header 19x2 AN1758 NAND128R3A NAND128R4A NAND128W3A NAND128W4A schematics nand flash controller NAND256R4A PDF

    AN1822

    Abstract: NAND512W3A 64MB "nand flash memory" fat32 Wear Leveling in Single Level Cell NAND Flash Memory error free nand NAND FLASH 64MB Wear Leveling in Single Level Cell NAND Flash memories leveling FAT32 FLASH TRANSLATION LAYER FTL
    Text: AN1822 APPLICATION NOTE Wear Leveling in Single Level Cell NAND Flash Memories This Application Note describes the Wear Leveling algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION In ST NAND Flash memories each physical block can be programmed or erased reliably over 100,000


    Original     		AN1822 AN1822 NAND512W3A 64MB "nand flash memory" fat32 Wear Leveling in Single Level Cell NAND Flash Memory error free nand NAND FLASH 64MB Wear Leveling in Single Level Cell NAND Flash memories leveling FAT32 FLASH TRANSLATION LAYER FTL PDF

    WSOP48

    Abstract: No abstract text available
    Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES


    Original     		NAND128-A, NAND256-A NAND512-A, NAND01G-A x8/x16) Byte/264 WSOP48 PDF

    15x1m

    Abstract: No abstract text available
    Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32Mbit spare area


    Original     		NAND128-A, NAND256-A NAND512-A, NAND01G-A x8/x16) Byte/264 32Mbit 15x1m PDF

    USOP48

    Abstract: VFBGA63 FBGA63 NAND08GW4B
    Text: NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES


    Original     		NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B Byte/1056 64Mbit USOP48 VFBGA63 FBGA63 NAND08GW4B PDF

    NAND01G-A

    Abstract: NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48 nand TSOP48 SE5055
    Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array


    Original     		NAND128-A, NAND256-A NAND512-A, NAND01G-A x8/x16) Byte/264 NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48 nand TSOP48 SE5055 PDF

    NAND01G-B2B

    Abstract: TSOP48 2 NAND01GW3B2B NAND02GW3B2C VFBGA63 NAND01GR3B2B NAND01GR4B2B NAND02G-B2C NAND01GR nand02
    Text: NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory Features • High density NAND flash memories – Up to 2 Gbits of memory array – Cost effective solutions for mass storage applications ■ NAND interface – x8 or x16 bus width


    Original     		NAND01G-B2B NAND02G-B2C 2112-byte/1056-word TSOP48 NAND01G-B2B TSOP48 2 NAND01GW3B2B NAND02GW3B2C VFBGA63 NAND01GR3B2B NAND01GR4B2B NAND02G-B2C NAND01GR nand02 PDF