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    NAND FLASH 512M Search Results

    NAND FLASH 512M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy

    NAND FLASH 512M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TOSHIBA flash memory

    Abstract: Toshiba flash 40hor41h
    Text: THNIDxxxxBx Series Rev.1.1 NAND Flash Drive - THNIDxxxxBx Series -OUTLINE The NAND Flash Drive THNIDxxxxBx series is Toshiba’s flash memory drive having IDE interface which features a flash disk controller chip and NAND-type flash memory devices. There are two types of form factors,


    Original     		PDF 128MB, 192MB, 256MB, 320MB, 384MB, 512MB, 640MB, 1024MB, 1536MB 2048MB TOSHIBA flash memory Toshiba flash 40hor41h

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View BGA 119 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3 ± 0.3V power supply


    Original     		PDF 512Mx64-BGA FN32G64VB8263 32Gbit 512Mx64, 512Mx8 512Mx64-bit 512Mx8-bit MMFN64408808B-D 3DFP-0263-REV

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View - BGA 120 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3  0.3V power supply


    Original     		PDF 512Mx64-BGA FN32G64VB8263 32Gbit 512Mx64, 512Mx8 512Mx64-bit 512Mx8-bit MMFN64408808B-D 3DFP-0263-REV

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View BGA 119 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3  0.3V power supply


    Original     		PDF 512Mx64-BGA FN32G64VB8263 32Gbit 512Mx64, 512Mx8 512Mx64-bit 512Mx8-bit MMFN64408808B-D 3DFP-0263-REV

    NAND FLASH TRANSLATION LAYER FTL

    Abstract: leveling AN1822 an1823 bad block st nand flash application note NAND01G-A NAND128-A NAND128R3A NAND128R4A
    Text: AN1822 APPLICATION NOTE Wear Leveling in NAND Flash Memories This Application Note describes the Wear Leveling algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION The Flash Translation Layer is an additional software layer between the File System and the NAND Flash


    Original     		PDF AN1822 NAND FLASH TRANSLATION LAYER FTL leveling AN1822 an1823 bad block st nand flash application note NAND01G-A NAND128-A NAND128R3A NAND128R4A

    K9F2G08U0B-PCB0

    Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
    Text: SAMSUNG's Digital World go contents Flash ● ● ● ● ● NAND Flash ❍ Products ❍ EOL Products Toggle DDR NAND Flash ❍ Products Flash SSD NOR Flash ❍ Products ❍ EOL Products Flash Cards ❍ Products ❍ EOL Products Product Search ● ● ●


    Original     		PDF K9F2G08U0B 07-Sep-2010 K9F2G08U0B-PCB0 samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND

    MT29C2G24MAKLAJG-75 IT

    Abstract: MT29C2G24MAKLAjg JW256
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


    Original     		PDF 168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29C2G24MAKLAJG-75 IT MT29C2G24MAKLAjg JW256

    NAND512W3A 64MB

    Abstract: STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B
    Text: NAND Flash memories The core element of a compact audio-player is a NAND Flash, smaller than a stamp, which is capable of storing hours of audio files Because NAND Flash offers higher densities and performances at lower cost, it is ideal for multimedia system


    Original     		PDF FLNANDF0106 NAND512W3A 64MB STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B

    MT29F2G16AB

    Abstract: MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


    Original     		PDF 168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29F2G16AB MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET

    512Mx8

    Abstract: No abstract text available
    Text: MEMORY MODULE FLASH Nand 512Mx8-SOP Flash Memory MODULE 3DFN4G08VS1636 4Gbit Flash Nand organized as 512Mx8, based on 512Mx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) – Package D1 Features - Organization -Memory Cell Array (512M+16.384KM)bitx8.


    Original     		PDF 512Mx8-SOP 3DFN4G08VS1636 512Mx8, 512Mx8 384KM 3DFP-0636-REV 512Mx8

    AN1822

    Abstract: NAND512W3A 64MB "nand flash memory" fat32 Wear Leveling in Single Level Cell NAND Flash Memory error free nand NAND FLASH 64MB Wear Leveling in Single Level Cell NAND Flash memories leveling FAT32 FLASH TRANSLATION LAYER FTL
    Text: AN1822 APPLICATION NOTE Wear Leveling in Single Level Cell NAND Flash Memories This Application Note describes the Wear Leveling algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION In ST NAND Flash memories each physical block can be programmed or erased reliably over 100,000


    Original     		PDF AN1822 AN1822 NAND512W3A 64MB "nand flash memory" fat32 Wear Leveling in Single Level Cell NAND Flash Memory error free nand NAND FLASH 64MB Wear Leveling in Single Level Cell NAND Flash memories leveling FAT32 FLASH TRANSLATION LAYER FTL

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE FLASH Nand 1Gx8-SOP Flash Memory MODULE 3DFN8G08VS2635 8Gbit Flash Nand organized as 1Gx8, based on 512Mx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase


    Original     		PDF 3DFN8G08VS2635 512Mx8 384KM 3DFP-0635-REV

    3DFN16G08

    Abstract: VS464
    Text: MEMORY MODULE FLASH Nand 2Gx8-SOP Flash Memory MODULE 3DFN16G08VS4643 16Gbit Flash Nand organized as 2Gx8, based on 512MGx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase


    Original     		PDF 3DFN16G08VS4643 16Gbit 512MGx8 384KM 3DFP-0643-REV 3DFN16G08 VS464

    TFBGA107

    Abstract: ddr flash "ready not busy" BGA bga 10x13 NAND FLASH BGA NAND*N M65KA512AB NAND01G-N NAND01GR3N6 NAND01GR4N5 NAND01G
    Text: NAND01G-N 1 Gbit x8/x16 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package PRELIMINARY DATA Features summary • Multi-chip Package – NAND Flash Memory – 512 Mbit or 1 Gbit (x8/x16) Large Page Size NAND Flash Memory


    Original     		PDF NAND01G-N x8/x16) TFBGA107 ddr flash "ready not busy" BGA bga 10x13 NAND FLASH BGA NAND*N M65KA512AB NAND01G-N NAND01GR3N6 NAND01GR4N5 NAND01G

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE FLASH Nand 1Gx8-SOP Flash Memory MODULE 3DFN4G08VS1636 8Gbit Flash Nand organized as 1Gx8, based on 512Mx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) – Package D1 Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase


    Original     		PDF 3DFN4G08VS1636 512Mx8 384KM 3DFP-0636-REV

    MT29C1G24MADLAJA-6

    Abstract: Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 137-Ball MCP NAND sDR mt29c 1g nand DDR mcp
    Text: Preliminary‡ Micron Confidential and Proprietary 137-Ball NAND Flash with LP-DRAM MCP Features NAND Flash with LP-DRAM 137-Ball Multiple-Chip Package MCP MT29CxGxxMAxxxJA Current Production Part Numbers: Table 1 on page 2 Features Figure 1: • All-Micron NAND Flash and LP-DRAM


    Original     		PDF 137-Ball MT29CxGxxMAxxxJA 09005aef82ff4431 09005aef82ff448c 137ball MT29C1G24MADLAJA-6 Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 MCP NAND sDR mt29c 1g nand DDR mcp

    MT29C4G48MAZBBAKQ-48 IT

    Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)


    Original     		PDF 168-Ball MT29C4G48MAZBBAKQ-48 MT29C4G96MAZBBCJG-48 MT29C8G96MAZBBDJV-48 09005aef855512a5 168ball MT29C4G48MAZBBAKQ-48 IT MT29C8G96MAZBBDJV-48 IT mt29c4g96

    NAND512W3A2C

    Abstract: VFBGA63 ST MICROELECTRONICS FBGA63 NAND512R3A2C NAND512R4A2C NAND512W4A2C NAND512W3A2
    Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface


    Original     		PDF NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C Byte/264 TSOP48 VFBGA55 VFBGA63 ST MICROELECTRONICS FBGA63 NAND512R4A2C NAND512W4A2C NAND512W3A2

    FBGA63

    Abstract: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
    Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface


    Original     		PDF NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C byte/264 TSOP48 VFBGA55 VFBGA63 FBGA63 NAND512R4A2C NAND512W4A2C

    NAND512-A2C

    Abstract: NAND512A2C NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
    Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features ● ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications NAND interface


    Original     		PDF NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word 512-Mbit TSOP48 VFBGA55 VFBGA63 NAND512-A2C NAND512A2C NAND512R4A2C NAND512W4A2C

    MT29C2G24m

    Abstract: MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD
    Text: Preliminary‡ 168-Ball NAND Flash and LP-DRAM PoP TI-OMAP MCP Features NAND Flash and LP-DRAM 168-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


    Original     		PDF 168-Ball 09005aef83071038/PDF: 09005aef83070ff3 168ball MT29C2G24m MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD

    NANDA9R3N

    Abstract: NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM TFBGA137
    Text: NANDxxxxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features FBGA n MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 4-, 2x2-Gbit large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or


    Original     		PDF 2x512-, 256/512-Mbit x16/x32) TFBGA107 TFBGA137 LFBGA137 TFBGA149 VFBGA160 VFBGA152 TFBGA152 NANDA9R3N NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM

    NANDA9R3N0

    Abstract: NANDA9R4N4 nanda8r3
    Text: NANDxxRxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features • FBGA MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 2x2-Gbit (x8/x16) large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or


    Original     		PDF x8/x16) 2x512-, 256/512-Mbit x16/x32) TFBGA107 TFBGA137 TFBGA149 VFBGA160 TFBGA152 NANDA9R3N0 NANDA9R4N4 nanda8r3

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand