nand64
Abstract: No abstract text available
Text: NAND64GW3FGA 64-Gbit 8 x 8 Gbits , eight Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • ■ High-density SLC NAND flash memory – 64 Gbits of memory array – 2 Gbits of spare area
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NAND64GW3FGA
64-Gbit
4224-byte
nand64
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PDF
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NAND64GW3FGA
Abstract: NAND64G 64Gbit NUMonyx NAND64G
Text: NAND64GW3FGA 64-Gbit 8 x 8 Gbits , eight Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • ■ High-density SLC NAND flash memory – 64 Gbits of memory array – 2 Gbits of spare area
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Original
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NAND64GW3FGA
64-Gbit
4224-byte
NAND64GW3FGA
NAND64G
64Gbit
NUMonyx NAND64G
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PDF
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Untitled
Abstract: No abstract text available
Text: NAND64GW3FGA 64-Gbit 8 x 8 Gbits , eight Chip Enable, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • ■ High-density SLC NAND flash memory – 64 Gbits of memory array – 2 Gbits of spare area
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Original
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NAND64GW3FGA
64-Gbit
4224-byte
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PDF
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Untitled
Abstract: No abstract text available
Text: 512Mb through 8Gb x8/x16 Multiplex NAND Flash Memory NAND Flash Memory Features Figure 1: 48-PIN TSOP Type 1 • FNN Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes)
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Original
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512Mb
x8/x16
48-PIN
09005aef81d3348f
09005aef81d3345f
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PDF
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SpecTek flash
Abstract: Micron 512MB nand FLASH SpecTek nand spectek nand flash M2 8gb pinout SpecTek nand 8 M29A 48-PIN 04/SpecTek flash flash chip 8gb
Text: 512Mb through 8Gb x8/x16 Multiplex NAND Flash Memory NAND Flash Memory Features Figure 1: 48-PIN TSOP Type 1 • FNN Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes)
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Original
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512Mb
x8/x16
48-PIN
09005aef81d3348f
09005aef81d3345f
SpecTek flash
Micron 512MB nand FLASH
SpecTek nand
spectek nand flash
M2 8gb pinout
SpecTek nand 8
M29A
04/SpecTek flash
flash chip 8gb
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PDF
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Untitled
Abstract: No abstract text available
Text: 512Mb through 8Gb x8/x16 Multiplex NAND Flash Memory NAND Flash Memory Features Figure 1: 48-PIN TSOP Type 1 • FNN Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes)
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Original
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512Mb
x8/x16
48-PIN
See9/05
09005aef81d3348f
09005aef81d3345f
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PDF
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SpecTek flash
Abstract: No abstract text available
Text: 512Mb through 8Gb x8/x16 Multiplex NAND Flash Memory NAND Flash Memory Features Figure 1: 48-PIN TSOP Type 1 • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes)
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Original
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512Mb
x8/x16
48-PIN
09005aef81d3348f
09005aef81d3345f
SpecTek flash
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PDF
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mt29f1g08
Abstract: 29F1G MT29F ONFI nand flash MICRON 1.8V 1GB NAND Device ID and Configuration Codes mt29f1g08 ecc MICRON MT29F1G08
Text: 1Gb: x8, x16 NAND Flash Memory Features 1Gb NAND Flash Memory MT29F1GxxABB Features Figure 1: • Organization – Page size x8: 2,112 bytes 2,048 + 64 bytes – Page size x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 1Gb: 1,024 blocks
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Original
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MT29F1GxxABB
09005aef81dc05df
09005aef821d5f08
mt29f1g08
29F1G
MT29F
ONFI nand flash
MICRON 1.8V 1GB NAND
Device ID and Configuration Codes
mt29f1g08 ecc
MICRON MT29F1G08
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PDF
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mt29f1g08
Abstract: MT29F1G08A Micron ONFI 2.2 MT29F1G16 MT29F1G08ABB MT29F1GxxABA 29F1G08 Micron NAND onfi P1022 Micron NAND
Text: 1Gb: x8, x16 NAND Flash Memory Features 1Gb NAND Flash Memory MT29F1GxxABB Features Figure 1: • Organization – Page size x8: 2,112 bytes 2,048 + 64 bytes – Page size x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 1Gb: 1,024 blocks
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Original
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MT29F1GxxABB
09005aef81dc05df
09005aef821d5f08
mt29f1g08
MT29F1G08A
Micron ONFI 2.2
MT29F1G16
MT29F1G08ABB
MT29F1GxxABA
29F1G08
Micron NAND onfi
P1022
Micron NAND
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PDF
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mt29f1g08
Abstract: MICRON MT29F1G08 MT29F1G16 MT29F1G08A Micron ONFI 2.2 mt29f1g08 ecc MT29F1G08ABB MT29F1 MT29F1G16ABB 0x00010840
Text: 1Gb: x8, x16 NAND Flash Memory Features 1Gb NAND Flash Memory MT29F1GxxABB Features Figure 1: • Organization – Page size x8: 2,112 bytes 2,048 + 64 bytes – Page size x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 1Gb: 1,024 blocks
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Original
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MT29F1GxxABB
09005aef81dc05df
09005aef821d5f08
mt29f1g08
MICRON MT29F1G08
MT29F1G16
MT29F1G08A
Micron ONFI 2.2
mt29f1g08 ecc
MT29F1G08ABB
MT29F1
MT29F1G16ABB
0x00010840
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PDF
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Micron MT29F8G08
Abstract: MT29F4G16BABWP Micron NAND MT29F4G16 FLASH MEMORY 29F MICRON 63 MT29FxG08 MT29F2G16AABWP nand 29F MT29F2G08AABWP
Text: 2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words)
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Original
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x8/x16
MT29F2G08AABWP/MT29F2G16AABWP
MT29F4G08BABWP/MT29F4G16BABWP
MT29F8G08FABWP
09005aef818a56a7
09005aef81590bdd
Micron MT29F8G08
MT29F4G16BABWP
Micron NAND
MT29F4G16
FLASH MEMORY 29F
MICRON 63
MT29FxG08
MT29F2G16AABWP
nand 29F
MT29F2G08AABWP
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PDF
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MT29FxG08
Abstract: Micron MT29F8G08 MT29F2G08AABWP MT29F4G16BABWP Micron NAND MT29F2G16AABWP Micron NAND flash controller micron nand flash chip 8gb serial flash memory 8gb micron mt29f8
Text: 2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words)
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Original
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x8/x16
MT29F2G08AABWP/MT29F2G16AABWP
MT29F4G08BABWP/MT29F4G16BABWP
MT29F8G08FABWP
09005aef818a56a7
09005aef81590bdd
MT29FxG08
Micron MT29F8G08
MT29F2G08AABWP
MT29F4G16BABWP
Micron NAND
MT29F2G16AABWP
Micron NAND flash controller
micron nand flash chip 8gb
serial flash memory 8gb
micron mt29f8
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PDF
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MT29FxG08
Abstract: marking RA14 MT29F2G16AABWP MT29F4G16BAB
Text: 2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words)
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Original
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x8/x16
MT29F2G08AABWP/MT29F2G16AABWP
MT29F4G08BABWP/MT29F4G16BABWP
MT29F8G08FABWP
09005aef818a56a7
09005aef81590bdd
MT29FxG08
marking RA14
MT29F2G16AABWP
MT29F4G16BAB
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PDF
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Untitled
Abstract: No abstract text available
Text: 2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words)
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Original
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x8/x16
MT29F2G08AABWP/MT29F2G16AABWP
MT29F4G08BABWP/MT29F4G16BABWP
MT29F8G08FABWP
09005aef818a56a7
09005aef81590bdd
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PDF
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MT29FxG08
Abstract: MT29F2G08AABWP MT29F2G08 Micron MT29F8G08 29f2g08 flash chip 8gb MT29F4G16BABWP MT29F2G16AABWP FLASH MEMORY 29F Micron NAND
Text: 2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words)
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Original
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x8/x16
MT29F2G08AABWP/MT29F2G16AABWP
MT29F4G08BABWP/MT29F4G16BABWP
MT29F8G08FABWP
09005aef818a56a7
09005aef81590bdd
MT29FxG08
MT29F2G08AABWP
MT29F2G08
Micron MT29F8G08
29f2g08
flash chip 8gb
MT29F4G16BABWP
MT29F2G16AABWP
FLASH MEMORY 29F
Micron NAND
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PDF
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H27U518S2C
Abstract: reset nand flash HYNIX
Text: 1 H27U518S2C Series 512 Mbit 64 M x 8 bit NAND Flash 512 Mb NAND Flash H27U518S2C This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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Original
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H27U518S2C
H27U518S2C
reset nand flash HYNIX
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PDF
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kc04
Abstract: No abstract text available
Text: TOSHIBA TC58V16BFT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X
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OCR Scan
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TC58V16BFT
TC58V16
264-byte,
264-byte
kc04
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PDF
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kc05
Abstract: No abstract text available
Text: TOSHIBA TC58V16BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X
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OCR Scan
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TC58V16BFT
TC58V16
264-byte,
264-byte
kc05
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PDF
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KC06
Abstract: TC58V16BFT
Text: TOSHIBA TC58V16BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X
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OCR Scan
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TC58V16BFT
TC58V16
264-byte,
264-byte
KC06
TC58V16BFT
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PDF
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toshiba NAND ID code
Abstract: No abstract text available
Text: TC5816BFT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X
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OCR Scan
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TC5816BFT
TC5816
264-byte,
264-byte
toshiba NAND ID code
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V16BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M x 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. Tne device is organized as 264 byte X
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OCR Scan
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TC58V16BFT
TC58V16
264-byte,
264-byte
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC5816BFT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 16 MBIT 2 M x 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X
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OCR Scan
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TC5816BFT
TC5816
264-byte,
264-byte
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PDF
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TC5816BFT
Abstract: TOSHIBA cmos memory -NAND
Text: TC5816BFT TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X
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OCR Scan
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TC5816BFT
TC5816
264-byte,
264-byte
TC5816BFT
TOSHIBA cmos memory -NAND
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PDF
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Untitled
Abstract: No abstract text available
Text: TC58V16BFT TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X
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OCR Scan
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TC58V16BFT
TC58V16
264-byte,
264-byte
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PDF
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